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  id-6.7a Datasheet PDF File

For id-6.7a Found Datasheets File :: 2943    Search Time::1.515ms    
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    IRF130SMD

TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. IRF130SMD
OCR Text ...T FOR HI-REL APPLICATIONS VDSS ID(cont) RDS(on) FEATURES ! 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 100V 11A W 0.19W 0 .7 6 (0 .0 3 0 ) m in . 9 .6 7 (0 .3 8 1 ) 9 .3 8 (0 .3 6 9 ) 1 1 .5 8 (0 .4 5 6 ) 1 1 .2 8 (0 .4 4...
Description N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

File Size 22.36K  /  2 Page

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    IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR

IRF[International Rectifier]
Part No. IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR
OCR Text ...S 30V RDS(on) max 12.5m ID 62A High Frequency Buck Converters for Computer Processor Power Benefits l l l Ultra-Low Gate ...6 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID =...
Description 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V Rds(on)max=12.5mohm Id=62A)
Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=62A)
Power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62A)

File Size 141.65K  /  10 Page

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    IRF3708 IRF3708L IRF3708S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3708 IRF3708L IRF3708S
OCR Text ...DSS 30V RDS(on) max 12m ID 62A l Benefits l l l Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized...6 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse ...
Description Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) 功率MOSFET(减振钢板基本\u003d 30V的,的Rdson)最大值\u003d 12mohm,身份证\u003d 62A条)
Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)

File Size 137.00K  /  10 Page

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ...S = -55V RDS(on) = 0.06 G ID = -31A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques...6 and 13 --- VDD = -28V --- ID = -16A ns --- RG = 6.8 --- RD = 1.6, See Fig. 10 Between lead, nH -...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 167.31K  /  10 Page

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    IRF530A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF530A
OCR Text ... BVDSS = 100 V RDS(on) = 0.11 ID = 14 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS ...6.5 55 0.36 - 55 to +175 O 1 O 1 O 3 O 2 Linear Derating Factor Operating Junction and Storag...
Description N-CHANNEL POWER MOSFET
Advanced Power MOSFET

File Size 253.11K  /  7 Page

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    IRF7807D1

International Rectifier
Part No. IRF7807D1
OCR Text ...) 25C 70C IDM PD Symbol VDS VGS ID Max. 30 12 8.3 6.6 66 2.5 1.6 3.5 2.2 -55 to 150 C W A A Units V A/S A/S A/S G 1 8 K/D K/D K/D K/D D 2 7 3 6 4 5 SO-8 Top View Device Features (Max Values) IRF7807D1 VDS...
Description MOSFET / SCHOTTKY DIODE

File Size 162.75K  /  8 Page

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    IRF7807D2

International Rectifier
Part No. IRF7807D2
OCR Text ...) 25C 70C IDM PD Symbol VDS VGS ID Max. 30 12 8.3 6.6 66 2.5 1.6 3.7 2.3 -55 to 150 C W A A Units V A/S A/S A/S G 1 8 K/D K/D K/D K/D D 2 7 3 6 4 5 SO-8 Top View Device Features (Max Values) IRF7807D2 VDS...
Description MOSFET / SCHOTTKY DIODE

File Size 131.40K  /  8 Page

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    IRF7807 IRF7807A IRF7807ATR IRF7807TR

IRF[International Rectifier]
Part No. IRF7807 IRF7807A IRF7807ATR IRF7807TR
OCR Text ...6 25C 70C IDM PD Symbol VDS VGS ID 8.3 6.6 66 2.5 1.6 -55 to 150 2.5 66 C A IRF7807 30 12 8.3 6.6 66 W A IRF7807A Units V Thermal Resistance Parameter Maximum Junction-to-Ambient RJA Max. 50 Units C/W www.irf.com 1 10/10/...
Description 8.3 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
Chip-Set for DC-DC Converters
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 238.61K  /  8 Page

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    IRF9410

International Rectifier
Part No. IRF9410
OCR Text ...rrent TA = 25C TA = 70C VDS VGS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Maximum 30 20 7.0 5.8 37 2.8 2.5 1.6 70 4.2 0.25 5.0 -55 to + 150 Units V Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25C Maximum...
Description Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)

File Size 103.18K  /  7 Page

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    IRF9520NL IRF9520NS

IRF[International Rectifier]
Part No. IRF9520NL IRF9520NS
OCR Text ... = -100V RDS(on) = 0.48 G ID = -6.8A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swit...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)

File Size 151.66K  /  10 Page

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