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For features Found Datasheets File :: 414559 Search Time::4.719ms
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				Vitesse Semiconductor Corporation Vitesse Semiconductor C...
Part No.	VSC8538XHJ
OCR Text	features: 4 extremely low power consumption of 650mw / port (1000base-t mode) enables use of 27mm, 444-pin hs-bga package 4 patented, low emi line driver with integrated line side termination resistors 4 compliant with ieee 80...
Description	Octal Port 10/100/1000BASE-T PHY
File Size	243.67K / 2 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPCP8207
OCR Text	...obile equipment 2. 2. 2. 2. features features features features (1) small footprint due to a small and thin package (2) small gate charge : q sw = 4.7 nc (typ.) (3) low drain-source on-resistance: r ds(on) = 29.1 m ? (typ.) (v gs = ...
Description	Power MOSFET (N-ch dual)
File Size	239.03K / 9 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	VND7N04-E
OCR Text	features n linear current limitation n thermal shut down n short circuit protection n integrated clamp n low current drawn from input pin n diagnostic feedback through input pin n esd protection n direct access to the gate of the ...
Description	Fully autoprotected power MOSFET
File Size	585.98K / 18 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPHR9003NL
OCR Text	...c-dc converters 2. 2. 2. 2. features features features features (1) high-speed switching (2) small gate charge: q sw = 16 nc (typ.) (3) low drain-source on-resistance: r ds(on) = 1.1 m ? (typ.) (v gs = 4.5 v) (4) low leakage current...
Description	Power MOSFET (N-ch single VDSS≤30V)
File Size	229.59K / 9 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPCA8059-H
OCR Text	...mobile handsets 2. 2. 2. 2. features features features features (1) small, thin package (2) high-speed switching (3) small gate charge: q sw = 9.1 nc (typ.) (4) low drain-source on-resistance: r ds(on) = 3.8 m ? (typ.) (v gs = 4.5 v...
Description	Power MOSFET (N-ch single VDSS≤30V)
File Size	230.10K / 9 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TK72E08N1
OCR Text	...tage regulators 2. 2. 2. 2. features features features features (1) low drain-source on-resistance: r ds(on) = 3.6 m ? (typ.) (v gs = 10 v) (2) low leakage current: i dss = 10 a (max) (v ds = 80 v) (3) enhancement mode: v th = 2...
Description	Switching Voltage Regulators
File Size	247.40K / 9 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	SSM6J215FE
OCR Text	...gement switches 2. 2. 2. 2. features features features features (1) 1.5-v gate drive voltage. (2) low drain-source on-resistance : r ds(on) = 154 m ? (max) (@v gs = -1.5 v) r ds(on) = 104 m ? (max) (@v gs = -1.8 v) r ds(on) =...
Description	Small-signal MOSFET
File Size	228.05K / 9 Page	View it Online	Download Datasheet

				Powerex Power Semiconductors
Part No.	PP300B120-ND
OCR Text	...forced air-cooled heatsink and features state-of-the-art powerex igbts with low conduction and low switching losses for high efficiency operation. the pow-r-pak? includes a low inductance laminated bus structure, optically isolated ga...
Description	H-Bridge POW-R-PAK IGBT Assembly 300 Amperes/1200 Volts
File Size	413.41K / 5 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPN2R503NC
OCR Text	...gement switches 2. 2. 2. 2. features features features features (1) small footprint due to a small and thin package (2) low drain-source on-resistance: r ds(on) = 2.1 m ? (typ.) (v gs = 10 v) (3) low leakage current: i dss = 10 a ...
Description	Power MOSFET (N-ch single VDSS≤30V)
File Size	243.24K / 9 Page	View it Online	Download Datasheet

For features Found Datasheets File :: 414559 Search Time::4.719ms
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