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				International Rectifier
Part No.	IRF1010E
OCR Text	... = 25C, IF = 50A --- 220 330 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Pulse width 400s; duty cycle ...
Description	Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?
File Size	143.91K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text	... = 25C, IF = 43A --- 220 230 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 270H R...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-262 package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?
File Size	144.82K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010N
OCR Text	... = 25C, IF = 43A --- 220 230 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 43A, di/dt 210A/s, VDD ...
Description	Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?) Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)
File Size	154.40K / 8 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	IRF520 SIHF520 SIHF520-E3 IRF520PBF
OCR Text	...A (see fig. 12). c. ISD 9.2 A, di/dt 110 A/s, VDD VDS, TJ 175 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91017 S-81240-Rev. A, 16-Jun-08 www.vishay.com 1 IRF520,...
Description	Power MOSFET
File Size	131.71K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1104
OCR Text	... = 25C, IF = 60A --- 188 280 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle...
Description	Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A) Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?) Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?? Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A) Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?
File Size	97.26K / 8 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	IRF510 IRF510PBF SIHF510 SIHF510-E3
OCR Text	...A (see fig. 12). c. ISD 5.6 A, di/dt 75 A/s, VDD VDS, TJ 175 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91015 S-81377-Rev. A, 30-Jun-08 www.vishay.com 1 IRF510, ...
Description	Power MOSFET
File Size	1,061.28K / 8 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	IL4217-X007 IL4217-X009 IL4216 IL4216-X006 IL4216-X009 IL4217 IL4218 IL4218-X006 IL4218-X007 IL4218-X009
OCR Text	...RM, Tamb = 80 C VD = 0.67 VDRM, di/dtcrq 15 A/ms, Tamb = 25 C VD = 0.67 VDRM, di/dtcrq 15 A/ms, Tamb = 80 C IT = 300 mA IL4217 IL4218 VDRM...dt RthjI 5000 100 150 0.8 5000 1.0 V/s A/ms C/W pF mA Off-state current Thermal resistance,...
Description	Optocoupler, Phototriac Output, High dV/dt, Very Low Input Current
File Size	485.36K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1310NL IRF1310NS
OCR Text	...J = 25C, IF = 22A --- 1.2 1.8 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; ...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
File Size	152.94K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1310N
OCR Text	...J = 25C, IF = 22A --- 1.2 1.8 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 22A, di/dt 18...
Description	Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A) Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
File Size	92.91K / 8 Page	View it Online	Download Datasheet

For di dt Found Datasheets File :: 40682 Search Time::1.266ms
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