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For assembly Found Datasheets File :: 43647    Search Time::2.14ms    
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    DS1112SG57 DS1112SG DS1112SG55 DS1112SG56 DS1112SG58 DS1112SG59 DS1112SG60

DYNEX[Dynex Semiconductor]
Part No. DS1112SG57 DS1112SG DS1112SG55 DS1112SG56 DS1112SG58 DS1112SG59 DS1112SG60
OCR Text ...exsemi.com DS1112SG POWER assembly CAPABILITY The Power assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping...
Description Rectifier Diode

File Size 94.33K  /  7 Page

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    TRIQUINT[TriQuint Semiconductor]
Part No. TGA4902-SM
OCR Text ...ld be observed during handling, assembly and test. Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. 7 TriQuint Semiconduct...
Description Ka-Band Packaged MPA

File Size 165.39K  /  9 Page

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    TRIQUINT SEMICONDUCTOR INC
TRIQUINT[TriQuint Semiconductor]
Part No. TGA8161-SCC TGA8161
OCR Text ...side metallization, for ease of assembly. TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 1 Product Data Sheet TGA8161-SCC TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 85...
Description Gain Block Amplifier

File Size 560.30K  /  7 Page

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    TRIQUINT[TriQuint Semiconductor]
Part No. TGA4832
OCR Text ...13, 2005 TGA4832 Recommended assembly Diagram 9FWUO 9 5) ,1 5) 287 9' 9J Note: Input and Output ports are DC coupled. Recommended Components: * CAPACITOR VALUE None 0.01 uF 0.1 uF BYPASSING EFFECTIVE TO: 20 MHz...
Description DC - 35 GHz Wideband Amplifier

File Size 249.84K  /  10 Page

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    IRF3711 IRF3711L IRF3711S

IRF[International Rectifier]
Part No. IRF3711 IRF3711L IRF3711S
OCR Text ...ASSEMBLED ON WW 19, 1997 IN THE assembly LINE "C" INTERNATIONAL RECTIFIER LOGO assembly LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C 8 www.irf.com IRF3711/3711S/3711L D2Pak Package Outline D2Pak Part Marking I...
Description Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??
Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?

File Size 243.87K  /  11 Page

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    TRIQUINT[TriQuint Semiconductor]
Part No. TGA4830-EPU
OCR Text ...ne 16, 2004 TGA4830-EPU Chip assembly & Bonding Diagram Bypassing Effective Lower Frequency 0 20 MHz 0.01uF 4 MHz 0.1uF 250kHz C Additional Biasing Information: * Bias Conditions: V+ = 5.0 V, I+ = 50 mA * Adjust Vg1 for I+ = 50 mA ...
Description Wideband Low Noise Amplifier

File Size 713.43K  /  9 Page

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    TRIQUINT[TriQuint Semiconductor]
Part No. TGA4819-SL
OCR Text ...t April 6, 2006 TGA4819-SL assembly of a TGA4819-SL Package onto a Motherboard Manual assembly for Prototypes 1. Clean the motherboard with Acetone and rinse with alcohol and DI water. Allow the motherboard to fully dry. 2. Using a st...
Description 10.7Gb/s Linear Optical Modulator Driver

File Size 382.08K  /  11 Page

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    MAX811TEUS

Maxim Integrated Products
Part No. MAX811TEUS
OCR Text ...cation: D. Transistor Count: D. assembly Location: E. Date of Initial Production: 4-Pin P Voltage Monitors with Manual Reset Input S12 (SG1.2) - Standard 1.2 micron silicon gate CMOS Oregon, USA 341 Malaysia or Thailand January, 1997 III...
Description PLASTIC ENCAPSULATED DEVICES

File Size 54.89K  /  8 Page

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    TRIQUINT[TriQuint Semiconductor]
Part No. TGA4817-EPU
OCR Text ...Bypass Capacitors Required (see assembly drawing) 10GBit/s, 2 -1 PRBS, BER < 10 31 -12 TABLE III THERMAL INFORMATION Parameter RJC Thermal Resistance (channel to backside of carrier) Test Conditions V = 3.3 V + I = 70 mA Pdiss = 0.231 W...
Description 10 Gb/s Wide Dynamic Range TIA
10Gb/s Wide Dynamic Range Differential TIA

File Size 407.92K  /  9 Page

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    TRIQUINT[TriQuint Semiconductor]
Part No. TGA4816-EPU
OCR Text ...Bypass Capacitors Required (see assembly drawing) TABLE III THERMAL INFORMATION Parameter Test Conditions TCH (oC) 82 RTJC (qC/W) 59.7 TM (HRS) 4.5 E+7 V+ = 3.3 V RJC Thermal I+ = 60 mA Resistance (channel to backside of Pdiss = 0.198...
Description 10 GB/s Differential Transimpedance Amplifier
10Gb/s Differential TIA

File Size 101.67K  /  7 Page

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