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    2SA1096 2SA1096A 2SC2497A 2SC2497

PANASONIC[Panasonic Semiconductor]
Part No. 2SA1096 2SA1096A 2SC2497A 2SC2497
OCR Text ...mperature 150 -55 to +150 C C V A A W Unit V V 1 2 0.750.1 4.60.2 0.50.1 0.50.1 2.30.2 3 1.760.1 16.01.0 Emitter to base voltage Peak collector current Collector current Collector power dissipation 1 : Emitter 2 : Collector 3 : Ba...
Description    Silicon NPN epitaxial planar type(For low-frequency power amplification)

File Size 68.48K  /  4 Page

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    2SA1121 2SA1121SC

HIROSE ELECTRIC Co., Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SA1121 2SA1121SC
OCR Text ...0.5 -0.6 320 -- -- V Unit V V V A V Test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB = -20 V, IE = 0 I C = -1...to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Col...
Description TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | SOT-23 晶体管|晶体管|进步党| 35V的五(巴西)总裁| 500mA的一(c)| SOT - 23封装
Silicon PNP Epitaxial
Silicon PNP Transistor

File Size 23.33K  /  5 Page

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    2SA1122

HITACHI[Hitachi Semiconductor]
Part No. 2SA1122
OCR Text ....5 800 -0.5 -0.75 Unit V V V A A Test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB = -30 V, IE = 0 VEB = -2 V, IC = 0 VCE = -12 V, IC = -2 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to ...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

File Size 23.23K  /  5 Page

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    2SA1188 2SA1189 2SA1189E 2SA1189D

ZETTLER electronics GmbH
HITACHI[Hitachi Semiconductor]
Part No. 2SA1188 2SA1189 2SA1189E 2SA1189D
OCR Text ... -- -- -0.1 -0.1 800 Unit V V V A A Test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB = -70 V, IE = 0 VEB = -2...to 500 E 400 to 800 See characteristic curves of 2SA1190 and 2SA1191. 2 2SA1188, 2SA1189 M...
Description 5-Pin &#181;P Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 100MA I(C) | TO-92
Silicon PNP Epitaxial

File Size 23.47K  /  5 Page

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    2SA1190 2SA1191

HITACHI[Hitachi Semiconductor]
Part No. 2SA1190 2SA1191
OCR Text ... -- -- -0.1 -0.1 800 Unit V V V A A Test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB = -70 V, IE = 0 VEB = -2...to input en -- 0.7 -- -- 0.7 -- nV/ Hz Notes: 1. The 2SA1190 and 2SA1191 ...
Description Silicon PNP Epitaxial

File Size 44.42K  /  10 Page

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    2SA2057

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2057
OCR Text ... 150 -55 to +150 C C Unit V V V A A W 1 2 2.540.30 5.080.50 3 1 : Base 2 : Collector 3 : Emitter TO-220D-A1 Package Internal Connection C B E Note) *: Non-repetitive peak collector current Electrical Characteristics TC = 2...
Description Silicon PNP epitaxial planar type

File Size 72.39K  /  3 Page

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    2SA2064

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2064
OCR Text ... 150 -55 to +150 C C Unit V V V A A W 1 2 2.540.30 5.080.50 3 1: Base 2: Collector 3: Emitter TO-220D-A1 Package Internal Connection C B E Electrical Characteristics TC = 25C 3C Parameter Collector-emitter voltage (Base ope...
Description Silicon PNP epitaxial planar type

File Size 70.35K  /  3 Page

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    2SA2067

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2067
OCR Text ... 150 -55 to +150 C C Unit V V V A A W 1 : Base 2 : Collector 3 : Emitter MT-4-A1 Package Internal Connection C B E Electrical Characteristics TC = 25C 3C Parameter Collector-emitter voltage (Base open) Collector-base cutoff cur...
Description Silicon PNP epitaxial planar type

File Size 66.39K  /  3 Page

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    2SA673A 2SA673AK 2SA673A_K

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SA673A 2SA673AK 2SA673A_K
OCR Text ... 0.4 150 -55 to +150 Unit V V V A W C C 2 2SA673A(K) Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min -50 -50 -4 -- -- -- -- -- 60 10 -- -- -- -- Typ -- -- -- -- -- -0.64 -0.2 -0.87 ...
Description Silicon PNP Epitaxial

File Size 35.43K  /  8 Page

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    2SA673 2SA673A

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SA673 2SA673A
OCR Text ...- -0.5 -0.6 320 -- V Unit V V V A V Test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB = -20 V, IE = 0 I C = -1...to emitter voltage VBE -0.64 -- -0.64 -- Notes: 1. The 2SA673 and 2SA673A are grouped by h ...
Description Silicon PNP Epitaxial(小信号晶体管)

File Size 30.13K  /  6 Page

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