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STMicroelectronics
NUMONYX
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| Part No. |
NAND256W4A NAND256W3A NAND256R4A NAND256R3A NAND512W3A M7020 NAND512W3A3DN6T NAND01GW3A2CZA1E NAND512R3A2DN1F NAND512R3A2DN1T NAND512W4A2DN6T
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| OCR Text |
528 Byte, 264 Word Page Family
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 1.8V, 3V Supply Flash Memories
DATA BRIEFING
FEATURES SUMMARY s HIGH DENSITY NAND FLASH MEMORIES - Up to 1 Gbit memory array - Up to 32Mbit spare area - Cost ... |
| Description |
32M X 16 FLASH 3V PROM, 12000 ns, PDSO48
64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
128 MBIT, 256 MBIT, 512 MBIT, 1 GBIT (X8/X16) 1.8V, 3V SUPPLY FLASH MEMORIES
64M X 8 FLASH 3V PROM, 12000 ns, PDSO48
128M X 8 FLASH 3V PROM, 12000 ns, PBGA63
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| File Size |
62.74K /
5 Page |
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Samsung
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| Part No. |
K9F2808U0C
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| OCR Text |
...rform ed in typical 200s on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle ti... |
| Description |
IC,EEPROM,NAND FLASH,16MX8,CMOS,TSSOP,48PIN,PLASTIC
From old datasheet system
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| File Size |
317.17K /
32 Page |
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SAMSUNG[Samsung semiconductor]
Samsung Electronics
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| Part No. |
K5D5657DCM-F015 K5D5657DCM-F0CL
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| OCR Text |
...banks. In 256Mbit NAND Flash, a 528-byte page program can be typically achieved within 200us and an 16K-Byte block erase can be typically achieved within 2ms. In serial read operation, a byte can be read by 50ns. DQ pins serve as the ports ... |
| Description |
MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM
MCP / 256Mb NAND and 256Mb Mobile SDRAM
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| File Size |
1,288.81K /
74 Page |
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it Online |
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528-byte 264-word Found Datasheets File :: 60 Search Time::1.453ms
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