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Microsemi
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| Part No. |
APT25GT120BRDQ2G
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| OCR Text |
... i c = 12.5a i c = 25a i c = 50a i c = 12.5a i c = 25a i c = 50a t j = -55c 13v 11v 10v 9v 12v 8v 7v 15v t j = -55c downloaded from:...800v r g = 5 ? l = 100h switching energy losses (j) e on2 , turn on energy ... |
| Description |
IGBT w/ anti-parallel diode
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| File Size |
141.13K /
9 Page |
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it Online |
Download Datasheet
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Microsemi
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| Part No. |
APT25GT120BRDLG
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| OCR Text |
... i c = 12.5a i c = 25a i c = 50a i c = 12.5a i c = 25a i c = 50a t j = -55c 13v 11v 10v 9v 12v 8v 7v 15v t j = -55c downloaded from:...800v r g = 5 l = 100 h switching energy losses ( j) e on2 , turn on energ... |
| Description |
IGBT w/ anti-parallel diode
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| File Size |
176.65K /
9 Page |
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it Online |
Download Datasheet |
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Microsemi
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| Part No. |
APT60GF120JRDQ3
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| OCR Text |
... i c = 200a i c = 100a i c = 50a i c = 200a i c = 100a i c = 50a downloaded from: http:///
052-6287 rev a 4-2006 apt60gf120...800v r g = 1.0 ? l = 100h switching energy losses (mj) e on2 , turn on ener... |
| Description |
IGBT w/ anti-parallel diode
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| File Size |
269.25K /
9 Page |
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it Online |
Download Datasheet |
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Microsemi
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| Part No. |
APT50GF120B2RG
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| OCR Text |
... voltage (v ge = 15v, i c = 50a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 50a, t j = 125c) collector cut-off cur...800v v ge = 15v i c = 50a r g = 1.0 ? 7 t j = +25c inductive switching (125c) v cc = 800v v ge... |
| Description |
NPT IGBT & Trench IGBT
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| File Size |
279.88K /
6 Page |
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it Online |
Download Datasheet |
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Microsemi
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| Part No. |
APT40GF120JRDQ2
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| OCR Text |
... voltage (v ge = 15v, i c = 50a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 50a, t j = 125c) collector cut-off cur...800v v ge = 15v i c = 50a r g = 1.0 ? 7 t j = +25c inductive switching (125c) v cc = 800v v ge... |
| Description |
IGBT w/ anti-parallel diode
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| File Size |
348.48K /
9 Page |
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it Online |
Download Datasheet |
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Microsemi
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| Part No. |
APT33GF120LRDQ2G APT33GF120B2RDQ2G
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| OCR Text |
...a i c = 15a i c = 7.5a i c = 50a i c = 25a i c = 12.5a 10v downloaded from: http:///
052-6280 rev a 11-2005 apt33gf120b2_lrd...800v r g = 4.3 ? l = 100h switching energy losses (j) e on2 , turn on energ... |
| Description |
IGBT w/ anti-parallel diode
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| File Size |
301.69K /
9 Page |
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it Online |
Download Datasheet |
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MICROSEMI CORP
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| Part No. |
APT25GN120SG
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| OCR Text |
...est <0.5 % duty cycle i c = 50a i c = 25a i c = 12.5a v ge = 15v. 250s pulse test <0.5 % duty cycle i c = 50a i c ...800v r g = 4.3 ? l = 100 h switching energy losses (j) e on2 , turn on ene... |
| Description |
67 A, 1200 V, N-CHANNEL IGBT
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| File Size |
193.61K /
6 Page |
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it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
BT136-800E BT136-800E127
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| OCR Text |
...a; di g /dt = 0.2 a/s; t2+ g+ -50a/s i t =6a; i g = 0.2 a; di g /dt = 0.2 a/s; t2+ g- -50a/s i t =6a; i g = 0.2 a; di g /dt = 0.2 a/s; t2...800v; t j = 125 c - 0.1 0.5 ma dynamic characteristics dv d /dt rate of rise of off-state voltage v... |
| Description |
4Q Triac 4Q双向可控
Triacs sensitive gate - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 800 V; Package: week 1, 2005
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| File Size |
120.34K /
13 Page |
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it Online |
Download Datasheet |
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Price and Availability
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