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EUDYNA[Eudyna Devices Inc]
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| Part No. |
KP022J P0120002P
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| OCR Text |
...0
0 .6
1.2GHz
3 .0
4 .0 5 .0
1 0.0
6.0 S21 4.0 2.0 2.4GHz S12 1.2GHz 2.4GHz 0 0.02 0.04 0.06
0
45 5 5 -4
2 .0
4.0 5.0
10.0
0.2
0.6
0.8
2.0
3.0
Scale for |S12|
-180
-10 .0 0 .0
0.4
2.4GHz
-0.... |
| Description |
250mW GaAs Power FET (Pb-Free Type)
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| File Size |
676.23K /
13 Page |
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it Online |
Download Datasheet
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
KP023J P0120003P
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| OCR Text |
...
2 .0
6.0
35 13
3 .0
4 .0 5 .0
90
1.2GHz
45
10.0
0.2
0.6
0.8
2.0
3.0
4.0 5.0
0.4
1.0
0
- 0.
.0 -2
6
-1 35
- 0.
4
Scale for |S21|
-0.8
Specifications and information are s... |
| Description |
800mW GaAs Power FET (Pb-Free Type)
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| File Size |
683.14K /
13 Page |
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it Online |
Download Datasheet |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
KP024J P0120004P
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| OCR Text |
...otal Power Dissipation (W)
6 5 4 3 2 1 00
Power Derating Curve
Drain Current (mA)
2000 1500 1000 500 0 0
Transfer Curve
Vgs=0V...8
Load-pull Characteristics (Typical Data)
Tc=25C, Vds=6V, Ids=400mA, Common Source, Zo=50 (Cali... |
| Description |
1.5W GaAs Power FET (Pb-Free Type)
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| File Size |
660.09K /
13 Page |
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it Online |
Download Datasheet |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
KP029J P0120009P
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| OCR Text |
...ontinuous) Power Dissipation Pt 5.43 W (**) Junction Temperature Tj 150 C Storage Temperature Tstg - 40 to +150 C Tc: Case Temperature. Oper...8
Load-pull Characteristics (Typical Data)
Tc=25C, Vds=8V, Ids=400mA, Common Source, Zo=50 (Cali... |
| Description |
2W GaAs Power FET (Pb-Free Type)
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| File Size |
655.35K /
13 Page |
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it Online |
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Tyco Electronics
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| Part No. |
MAPLST2122-060CF
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| OCR Text |
...te Voltage Drain Leakage (VGS = 5 Vdc, VV = = 0) (V = 26 Vdc, DS 0)
DS GS
Symbol
Min
Typ
Max
Unit
Symbol V(BR)DSS IDSS ID...8 pF C6,C7,C12,C13 Chip Capacitor, 8.2 pF C8, C10 Chip Capacitor, 1 F C9, C11 Chip Capacitor, 0.1 F ... |
| Description |
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 60W, 28V
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| File Size |
168.31K /
5 Page |
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it Online |
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Tyco Electronics
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| Part No. |
MAPLST2122-090CF
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| OCR Text |
...age DrainCurrent Current (VGS = 5 Vdc, V (VDS = 26Vdc, VDS ==0) 0) GS Gate Threshold Voltage Gate--Source Leakage Current (VDS = 10 Vdc, ID ...8.2 pF ATC100B C6,C7 Chip Capacitor, 1.0 pF ATC100B C8 Chip Capacitor, 0.3 pF, ATC100B C14 Electroly... |
| Description |
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 90W, 28V
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| File Size |
160.55K /
5 Page |
View
it Online |
Download Datasheet |
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