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Vishay Semiconductors
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| Part No. |
BAY135-tap BAY135-TR
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| OCR Text |
...0 lx, v r , t j = 125 c i r 0.5 a e 300 lx, v r = 60 v i r 1na breakdown voltage i r = 5 a, t p /t = 0.01, t p = 0.3 ms v (br) 140 v diode capacitance v r = 0, f = 1 mhz c d 5pf figure 1. reverse current vs. junction temperature 04... |
| Description |
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| File Size |
88.03K /
3 Page |
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Vishay Semiconductors
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| Part No. |
1N4148-P-TAP 1N4148-P-TR
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| OCR Text |
...100 4 Min. Typ. Max. 1000 25 50 5 Unit mV nA A A V pF % ns ns
Typical Characteristics
Tamb = 25 C, unless otherwise specified
1.2 1.0 I F = 100 mA
1000
VF - Forward Voltage (V)
IR- Reverse Current (nA)
Tj = 25 C 100
0.8 ... |
| Description |
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| File Size |
98.85K /
4 Page |
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it Online |
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Vishay Semiconductors
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| Part No. |
BAW27-TAP BAW27-TR
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| OCR Text |
...60 V VR = 60 V, Tj = 100 C IR = 5 A, tp/T = 0.01, tp = 0.3 ms VR = 0, f = 1 MHz, VHF = 50 mV IF = IR = 10 mA to 100 mA, iR = 0.1 x IR Symbol VF VF VF VF IR IR V(BR) CD trr 75 4 6 Min. Typ. 670 800 950 1120 Max. 750 850 1000 1250 100 50 Unit... |
| Description |
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| File Size |
86.67K /
3 Page |
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it Online |
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Vishay Semiconductors
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| Part No. |
1N4150-TAP
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| OCR Text |
... f = 1 mhz, v hf = 50 mv c d 2.5 pf reverse recovery time i f = i r = (10 to 100) ma, i r = 0.1 x i r , r l = 100 t rr 4ns figure 1. reverse current vs. junction temperature 040 8 0 120 160 200 0.01 0.1 1 10 100 i- re v erse c u rre... |
| Description |
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| File Size |
88.96K /
3 Page |
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it Online |
Download Datasheet |
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