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  200-p Datasheet PDF File

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    2SB1091

HITACHI[Hitachi Semiconductor]
Part No. 2SB1091
OCR Text ...on voltage VBE (sat) (V) -10 -5 200 -2 -1.0 -0.5 -0.2 -0.1 -0.1 -0.2 VCE (sat) VBE (sat) 500 lC/lB = 200 500 10 5 Switching time t (s) Switching Time vs. Collector Current tstg 2 1.0 0.5 Ta = 25C VCC = -30 V IC = 300 IB1 = -500 IB2 to...
Description Silicon PNP Triple Diffused

File Size 34.50K  /  6 Page

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    2SB1156 B1156

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1156 B1156
OCR Text ... Power Transistors PC -- Ta 200 -20 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3W) IB=-300mA -16 -200mA -12 -140mA -100mA -8 -80mA -60mA -4 (2) (3) 0 0 25 50 75 100 125 150 0 0 -2 -4 -6 -8 -10 -12 -40mA ...
Description Silicon PNP epitaxial planar type(For power switching)

File Size 59.94K  /  3 Page

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    2SB1172 2SB1172A

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1172 2SB1172A
OCR Text ... Typ Max Unit V -1.8 -200 -200 -300 -300 -1 70 10 -1.2 30 0.5 1.2 0.3 250 V A A mA V MHz s s s Emitter-base cutoff current ...P hFE2 Publication date: February 2003 70 to 150 120 to 250 2.50.2 Absolute Maximum Ra...
Description Silicon PNP epitaxial planar type

File Size 75.67K  /  3 Page

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    2SB1181 2SB1260 2SB1241

ROHM[Rohm]
Part No. 2SB1181 2SB1260 2SB1241
OCR Text ...GAIN : hFE Ta=25C -100 200 100 50 VCE=-3V -10 -1V -1 -0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 BASE TO EMITTER VOLTAGE : VBE (V) -0.05mA IB=0mA 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 20 10 -...
Description Power Transistor

File Size 78.57K  /  3 Page

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    2SB561

HITACHI[Hitachi Semiconductor]
Part No. 2SB561
OCR Text ...300 -1.5 0. P C= 5 W -200 -1.0 -0.5 mA IB = 0 0.2 -100 0 50 100 Ambient Tmperature Ta (C) 150 0 -0.4 -0.8 -1.2 -1.6 -2.0 Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics -1,000 Col...
Description Silicon PNP Epitaxial

File Size 29.37K  /  6 Page

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    2SB715 2SB716 2SB716A

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SB715 2SB716 2SB716A
OCR Text ... Ta = 100C 0 -25 75 50 25 200 -0.4 -0.6 -0.8 Base to Emitter Voltage VBE (V) -0.1 -0.3 -1.0 -3 Collector Current IC (mA) -10 ...P O C = pe 75 0 n ra m tio W (-50 V, -15 mA) -1 -5 -10 -20 -50 -100 -...
Description Silicon PNP Epitaxial 硅外延进步党
Silicon PNP Transistor

File Size 31.71K  /  6 Page

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    2SB772 B772 UTC2SB772

友顺科技股份有限公司
UTC[Unisonic Technologies]
Part No. 2SB772 B772 UTC2SB772
OCR Text ...300s,Duty Cycle<2% 30 100 200 150 -0.3 -1.0 80 45 400 -0.5 -2.0 V V MHz pF UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW...P 160-320 E 200-400 CLASSIFICATION OF hFE2 TYPICAL PERFORMANCE CHARACTERISTICS Fig.1 Static c...
Description MEDIUM POWER LOW VOLTAGE TRANSISTOR
PNP EPITAXIAL SILICON TRANSISTOR

File Size 45.29K  /  2 Page

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    2SB873 2SB0873

PANASONIC[Panasonic Semiconductor]
Part No. 2SB873 2SB0873
OCR Text ...requency fT (MHz) -1 -3 -10 200 400 160 300 -25C 120 - 0.3 - 0.1 - 0.03 200 80 100 40 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 0 - 0.01 - 0.03 - 0.1 - 0.3 0 1 3 10 30 100 Collector cu...
Description Silicon PNP epitaxial planer type(For low-frequency power amplification)

File Size 36.32K  /  2 Page

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    2SB928 2SB928A 2SD1250A 2SD1250

PANASONIC[Panasonic Semiconductor]
Part No. 2SB928 2SB928A 2SD1250A 2SD1250
OCR Text ...c equipment. (TC=25C) Ratings -200 -150 -180 -6 -3 -2 30 1.3 150 -55 to +150 Unit V 2.0 s Features 1.5max. 1.1max. 0.80.1 ...P 100 to 240 Rank hFE1 Note: Ordering can be made by the common rank (PQ rank hFE1 = 60 to 240...
Description Silicon PNP epitaxial planar type(For power amplification)

File Size 47.41K  /  2 Page

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    2SB929 2SB929A 2SD1252A 2SD1252

PANASONIC[Panasonic Semiconductor]
Part No. 2SB929 2SB929A 2SD1252A 2SD1252
OCR Text ...ter N Type Package (DS) max -200 -200 -300 -300 -1 3.0-0.2 +0.4 +0 Unit A A mA V Forward current transfer ratio Base to em...P 120 to 250 Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank cl...
Description Silicon PNP epitaxial planar type(For power amplification)

File Size 48.48K  /  2 Page

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