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  1mx4 Datasheet PDF File

For 1mx4 Found Datasheets File :: 35    Search Time::1.531ms    
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    KMM5362203C2WG KMM5362203C2W

SAMSUNG[Samsung semiconductor]
Part No. KMM5362203C2WG KMM5362203C2W
OCR Text ... x 36 DRAM SIMM using 1Mx16 and 1mx4 Quad CAS, 1K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM5362203C2W is a 2Mx36bits Dynamic RAM high density memory module. The Samsung KMM5362203C2W consists of four CMOS 1Mx16bits DRAMs in 42-pin S...
Description 2M x 36 DRAM SIMM using 1Mx16 and 1mx4 Quad CAS, 1K Refresh, 5V

File Size 276.17K  /  17 Page

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    KMM5362203C2W

Samsung Semiconductor
Part No. KMM5362203C2W
OCR Text ... x 36 DRAM SIMM using 1Mx16 and 1mx4 Quad CAS, 1K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM5362203C2W is a 2Mx36bits Dynamic RAM high density memory module. The Samsung KMM5362203C2W consists of four CMOS 1Mx16bits DRAMs in 42-pin S...
Description 2Mx36 DRAM Simm Using 1Mx16 And 1mx4 Quad Cas

File Size 272.31K  /  17 Page

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    IC41C4100 IC41C4100-35J IC41C4100-35JI IC41C4100-35TI IC41LV4100 IC41LV4100-35J IC41LV4100-35T IC41LV4100-50J IC41LV4100

ICSI[Integrated Circuit Solution Inc]
Integrated Silicon Solution, Inc
Part No. IC41C4100 IC41C4100-35J IC41C4100-35JI IC41C4100-35TI IC41LV4100 IC41LV4100-35J IC41LV4100-35T IC41LV4100-50J IC41LV4100-50JI IC41LV4100-50T IC41LV4100-50TI IC41LV4100-60J IC41LV4100-60JI IC41LV4100-60T IC41LV4100-60TI IS41C4100-35T IC41C4100-60TI IC41C4100-50J IC41C4100-50JI IC41C4100-50T IC41C4100-50TI IC41C4100-60J IC41C4100-60JI IC41C4100-60T
OCR Text 1mx4 bit Dynamic RAM with EDO Page Mode Revision History Revision No 0A History Initial Draft Draft Date September 5,2001 Remark The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the ri...
Description 1mx4 bit Dynamic RAM with EDO Page Mode

File Size 296.97K  /  21 Page

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    Samsung Electronic
Part No. KM44C1000D KM44V1000D KM44C1000DJL-7 KM44C1000DJL-6 KM44C1000DJL-5 KM44V1000DJL-6 KM44V1000DJL-7 KM44C1000DJ-5 KM44V1000DJ-7
OCR Text ...in 3.3V Low power version. This 1mx4 Fast Page Mode DRAM family is fabricated using Samsungs advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as main memory for main frames and min...
Description 1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 70ns

File Size 371.80K  /  21 Page

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    KMM5361203C2W

Samsung Semiconductor
Part No. KMM5361203C2W
OCR Text ... x 36 DRAM SIMM using 1Mx16 and 1mx4 Quad CAS, 1K Refresh GENERAL DESCRIPTION The Samsung KMM5361203C2W is a 1Mx36bits Dynamic RAM high density memory module. The Samsung KMM5361203C2W consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ pa...
Description 1MBx36 DRAM Simm Using 1MBx16 And 1MBx4 Quad Cas

File Size 268.35K  /  17 Page

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    KMM5361205C2WG KMM5361205C2W

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. KMM5361205C2WG KMM5361205C2W
OCR Text ...42-pin SOJ package and one CMOS 1mx4 bit Quad CAS with EDO DRAM in 24-pin SOJ package mounted on a 72-pin glassepoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM5361205C2W is...
Description 1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh

File Size 281.12K  /  17 Page

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    KMM5361205C2W

Samsung Semiconductor
Part No. KMM5361205C2W
OCR Text ...42-pin SOJ package and one CMOS 1mx4 bit Quad CAS with EDO DRAM in 24-pin SOJ package mounted on a 72-pin glassepoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM5361205C2W is...
Description 1MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo

File Size 277.25K  /  17 Page

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    AS4C14400-70JC AS4C14400-70TC AS4C14405-70TC AS4C14400 AS4C14400-40JC AS4C14400-40TC AS4C14400-50JC AS4C14400-50TC AS4C1

ALSC[Alliance Semiconductor Corporation]
Part No. AS4C14400-70JC AS4C14400-70TC AS4C14405-70TC AS4C14400 AS4C14400-40JC AS4C14400-40TC AS4C14400-50JC AS4C14400-50TC AS4C14400-60JC AS4C14400-60TC AS4C14405 AS4C14405-40JC AS4C14405-40TC AS4C14405-50JC AS4C14405-50TC AS4C14405-60JC AS4C14405-60TC AS4C14405-70JC
OCR Text 1mx4 CMOS DRAM AS4C14400 AS4C14405 (R) 1M-bit x 4 CMOS DRAM (Fast page mode or EDO) Preliminary information Features * Organization: 1,048,576 words x 4 bits * High speed - 40/50/60/70 ns RAS access time - 20/25/30/35 ns column ...
Description 1M-bit × 4 CMOS DRAM (Fast page mode or EDO)
1M-bit 】 4 CMOS DRAM (Fast page mode or EDO)

File Size 390.43K  /  16 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. KMM5361203C2WG KMM5361203C2W
OCR Text ... x 36 DRAM SIMM using 1Mx16 and 1mx4 Quad CAS, 1K Refresh GENERAL DESCRIPTION The Samsung KMM5361203C2W is a 1Mx36bits Dynamic RAM high density memory module. The Samsung KMM5361203C2W consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ pa...
Description 1M x 36 DRAM SIMM using 1Mx16 and 1mx4 Quad CAS, 1K Refresh

File Size 272.21K  /  17 Page

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    ICSI[Integrated Circuit Solution Inc]
Part No. IC41C4105 IC41LV4105 IC41LV4105-35J IC41LV4105-35T IC41LV4105-50J IC41LV4105-50T IC41LV4105-60J IC41LV4105-60T IC41C4105-60T IC41C4105-35J IC41C4105-35T IC41C4105-50J IC41C4105-50T IC41C4105-60J
OCR Text 1mx4 bit Dynamic RAM with Fast Page Mode Revision History Revision No 0A History Initial Draft Draft Date August 1,2001 Remark The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the righ...
Description 1mx4 bit Dynamic RAM with Fast Page Mode

File Size 501.91K  /  17 Page

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