|
|
|
HSMC CORP. HI-SINCERITY MICROELECTRONICS, CORP. HSMC[Hi-Sincerity Mocroelectronics]
|
Part No. |
HTIP42C HTIP42
|
OCR Text |
...V V Test Conditions IC=-1mA, IE=0 IC=-30mA, IB=0 VCE=-100V VCE=-60V VEB=-5V IC=-6A, IB=-600mA IC=-6A, VCE=-4V IC=-0.3A, VCE=-4V IC=-3A, VCE=-4V IC=-0.1A, VCE=-5V, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
MHz
HTIP42C
HSM... |
Description |
PNP EPITAXIAL PLANAR TRANSISTOR 进步党外延平面晶体管
|
File Size |
27.00K /
3 Page |
View
it Online |
Download Datasheet |
|
|
|
IRF[International Rectifier] International Rectifier, Corp.
|
Part No. |
IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR
|
OCR Text |
...
Max.
20 20 77 64 308 87 61 0.59 -55 to + 175
Units
V V A W W mW/C C
Thermal Resistance
Parameter
RJC RCS RJA RJA Junction-to-C...6A 23.8A BOTTOM 28.4A TOP
400
Fig 14a&b. Basic Gate Charge Test circuit and Waveforms
300
... |
Description |
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 20V Single N-Channel HEXFET Power MOSFET in a TO-262 package 20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A? Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A) Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A) Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?) Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A) CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET(减振钢板基本\u003d 20V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 77A条? TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB
|
File Size |
123.62K /
10 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|