...mm
s Features
q q q
2.9 -0.05
Parameter Collector to base voltage Collector to 2SA1034 2SA1035 2SA1034
Symbol VCBO VCEO VEBO IC...16 -0.06
+0.1
0.4 -0.05
+0.1
s Absolute Maximum Ratings
1.90.2
Low noise voltage N...
...-- -- -- -- --
Max -- -- -- -0.5 -0.5 500 -0.2 -0.75
Unit V V V A A
Test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -...16 - 0.06
+ 0.10
1.5 0.15
+ 0.2 - 0.6
0 - 0.1
0.95
0.95
1.9 0.2 2.95 0.2
...
...tallation to the heat sink
8.0+0.5 -0.1 3.160.1
3.80.3 11.00.5
3.20.2
1.90.1
I Absolute Maximum Ratings TC = 25C
Parameter Co...16.01.0
Emitter to base voltage Peak collector current Collector current Collector power dissipat...
Description
Silicon NPN epitaxial planar type(For low-frequency power amplification)
... SD 160 to 320 Typ -- -- -- -- -0.2 -- -- -0.64 Max -- -- -- -0.5 -0.6 320 -- -- V Unit V V V A V Test conditions I C = -10 A, IE = 0 I C = ...16 - 0.06
+ 0.10
1.5 0.15
+ 0.2 - 0.6
0 - 0.1
0.95
0.95
1.9 0.2 2.95 0.2
...
...-- -- -- -- --
Max -- -- -- -0.5 -0.5 800 -0.5 -0.75
Unit V V V A A
Test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -...16 - 0.06
+ 0.10
1.5 0.15
+ 0.2 - 0.6
0 - 0.1
0.95
0.95
1.9 0.2 2.95 0.2
...
...FE*
1
2SA1189 Max -- -- -- -0.1 -0.1 800 Min Typ Max -- -- -- -0.1 -0.1 800 Unit V V V A A Test conditions I C = -10 A, IE = 0 I C = -1 ...16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. ...