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  single-fet Datasheet PDF File

For single-fet Found Datasheets File :: 11830    Search Time::2.313ms    
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    IR3Y48A1

Sharp Electrionic Components
Part No. IR3Y48A1
OCR Text ... VIEW The IR3Y48A1 is a CMOS single-chip signal processing IC for CCD area sensors which includes correlated double sampling circuit (CDS...FET gate 3 IR3Y48A1 PIN NO. SYMBOL 17 NC I/O - VDD EQUIVALENT CIRCUIT DESCRIPTION No c...
Description CCD SIGNAL PROCESS & DIGITAL INTERFACE IC

File Size 189.62K  /  34 Page

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    LXM1598-01

MICROSEMI[Microsemi Corporation]
Part No. LXM1598-01
OCR Text ...nd RF emissions result from its single stage resonant inverter featuring a patent pending Current Synchronous, Zero Voltage Switching (CS-ZV...FET's. The FET's drive an LC resonant circuit that feeds the primary of a high voltage transformer w...
Description 12V CCFL INVERTER MODULES

File Size 233.82K  /  5 Page

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    MPD8020

Micrel Semiconductor,Inc.
MICREL[Micrel Semiconductor]
Part No. MPD8020
OCR Text ...analog circuitry operate from a single +5V to +15V supply. The high-voltage section operates from +20V to +100V. An optional internal charge...FET gates approximately 15V higher than the highvoltage supply as required by high-side switch appli...
Description CMOS/DMOS Semicustom High-Voltage Array Summary Information*.Not Recommended for New Designs

File Size 30.04K  /  2 Page

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    MRF136Y

MACOM[Tyco Electronics]
Part No. MRF136Y
OCR Text ... up to 400 MHz range, in either single ended or push-pull configuration. * Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts B...FET D G G S (FLANGE) CASE 319B-02, STYLE 1 D MAXIMUM RATINGS Rating Drain-Source Voltag...
Description 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
N-CHANNEL MOS BROADBAND RF POWER FET

File Size 217.54K  /  9 Page

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    MRF157

MOTOROLA[Motorola, Inc]
Part No. MRF157
OCR Text ...0.2 0.1 0.1 0.05 0.05 0.02 0.02 SINGLE PULSE 0.01 10-2 10-1 1 10 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 RJC(t) = r(t) RJC RJC = 0.13C/W MAX D CU...FET results in a junction capacitance from drain-to-source (Cds). These capacitances are characteriz...
Description MOS LINEAR RF POWER FET

File Size 178.94K  /  8 Page

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    MRF175LU MRF175LV

MOTOROLA[Motorola, Inc]
Part No. MRF175LU MRF175LV
OCR Text ...and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each...FET results in a junction capacitance from drain-to- source (Cds). These capacitances are characteri...
Description N-CHANNEL BROADBAND RF POWER FETs

File Size 137.22K  /  8 Page

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    MRF175LV MRF175LU

MACOM[Tyco Electronics]
Part No. MRF175LV MRF175LU
OCR Text ...and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each...FET results in a junction capacitance from drain-to- source (Cds). These capacitances are characteri...
Description N-CHANNEL BROADBAND RF POWER FETs

File Size 143.35K  /  8 Page

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    MRF275 MRF275L

MACOM[Tyco Electronics]
Part No. MRF275 MRF275L
OCR Text ...and military applications using single ended circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of this...FET D CASE 333-04, STYLE 2 S MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Volta...
Description N-CHANNEL BROADBAND RF POWER FET

File Size 265.53K  /  13 Page

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    MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D
OCR Text ...tinuous -- Continuous @ 100C -- Single Pulse (tp 10 s) Total Power Dissipation @ TC = 25C Derate above 25C Total Power Dissipation @ TA = 2...FET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc....
Description TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM
From old datasheet system

File Size 252.63K  /  10 Page

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