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IXYS, Corp.
IXYS Corporation
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| Part No. |
IXTQ220N075T IXTH220N075T
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| OCR Text |
...e width limited by t jm 600 a v sd i f = 25 a, v gs = 0 v, note 1 1.0 v t rr i f = 25 a, -di/dt = 100 a/ s80ns v r = 40 v, v gs = 0 v ...306,728 b1 6,583,505 6,710,463 6771478 b2 7,071,537 preliminary technical information the product p... |
| Description |
220 A, 75 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET TO-3P, 3 PIN
N-Channel Enhancement Mode
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| File Size |
180.56K /
5 Page |
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it Online |
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Fairchild Semiconductor, Corp.
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| Part No. |
SI9435DYNL
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| OCR Text |
... diode forward current ?5.3 a v sd drain?source diode forward voltage v gs = 0 v, i s = ?5.3 a (note 2) ?0.86 ?1.2 v notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal referen... |
| Description |
5300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET LEAD FREE, SO-8
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| File Size |
235.49K /
8 Page |
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it Online |
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Fujitsu, Ltd.
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| Part No. |
MB93461-40PB-GE1 MB93461PB-GE1 MB93461BGL-GE1
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| OCR Text |
... , memory stick interface, and sd-io interface are embedded in mb93461. * : purchase of fujitsu i 2 c components conveys a license under t...306 225 136 39 380 307 226 137 40 381 308 227 138 41 382 309 228 139 42 vss vss vss vss vss vss vss ... |
| Description |
FR450 Series VLIW Embedded Microprocessor 32-BIT, 400 MHz, RISC PROCESSOR, PBGA420
FR450 Series VLIW Embedded Microprocessor 32-BIT, 360 MHz, RISC PROCESSOR, PBGA420
FR450 Series VLIW Embedded Microprocessor 32-BIT, 360 MHz, RISC PROCESSOR, PBGA400
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| File Size |
280.27K /
68 Page |
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it Online |
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IXYS Corporation
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| Part No. |
IXTL2X240N055T
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| OCR Text |
...e width limited by t jm 650 a v sd i f = 50 a, v gs = 0 v, note 1 1.0 v t rr i f = 25 a, -di/dt = 100 a/ s40ns v r = 30 v, v gs = 0 v ...306,728 b1 6,583,505 6,710,463 6771478 b2 7,071,537 note: 1. tab 6 - electrically isolated from the... |
| Description |
140 A, 55 V, 0.0044 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET ISOPLUS, I5PAC-5
N-Channel Enhancement Mode Avalanche Rated
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| File Size |
62.11K /
2 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
PSMN1R7-60BS
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| OCR Text |
...in d2pak source-drain diode v sd source-drain voltage i s =25a; v gs =0v; t j =25c; see figure 17 -0.81.2v t rr reverse recovery time i s =25a; di s /dt = -100 a/s; v gs =0v; v ds =30v -57-ns q r recovered charge i s =25a; di s /dt = -... |
| Description |
N-channel 60 V 2 mΩ standard level MOSFET in D2PAK 120 A, 60 V, 0.002 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
204.60K /
15 Page |
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it Online |
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IXYS Corporation
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| Part No. |
IXFR140N20P
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| OCR Text |
... v 90 a i sm repetitive 280 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25 a, -di/dt ...306,728 b1 6,583,505 6,710,463 6771478 b2
? 2006 ixys all rights reserved ixfr 140n20p fig. 2.... |
| Description |
PolarHT HiPerFET Power MOSFET ISOPLUS247
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| File Size |
131.20K /
5 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BUK6E2R0-30C
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| OCR Text |
...evel fet source-drain diode v sd source-drain voltage i s =25a; v gs =0v; t j =25c; see figure 15 -0.81.2v t rr reverse recovery time i s =20a; di s /dt = -100 a/s; v gs =0v; v ds =25v -70-ns q r recovered charge - 138 - nc table 6. cha... |
| Description |
N-channel TrenchMOS intermediate level FET 120 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
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| File Size |
163.72K /
15 Page |
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it Online |
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IXYS, Corp.
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| Part No. |
IXTA8N50P IXTP8N50P
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| OCR Text |
... 0 v 8 a i sm repetitive 14 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 8 a, v gs =0v,...306,728 b1 6,583,505 6,710,463 6,771,478 b2 pins: 1 - gate 2 - drain 3 - source 4 - drain to-220 (i... |
| Description |
PolarHV Power MOSFET N-Channel Enhancement Mode Avalanche Rated 8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
PolarHV Power MOSFET N-Channel Enhancement Mode Avalanche Rated 8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| File Size |
220.69K /
5 Page |
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it Online |
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Ruichips Semiconductor Co., Ltd
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| Part No. |
RU30120R
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| OCR Text |
...ting . d iode characteristics v sd diode forward voltage i sd = 60 a, v gs =0v 1. 2 v t rr reverse recovery time 45 ns q rr reverse recovery charge i sd = 60 a, dl sd /dt=100a/ m s 9 0 nc dynamic characteristics r g gate resistance v g... |
| Description |
N-Channel Advanced Power MOSFET
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| File Size |
280.53K /
9 Page |
View
it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
BUK661R6-30C
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| OCR Text |
...evel fet source-drain diode v sd source-drain voltage i s =25a; v gs =0v; t j =25c; see figure 15 -0.81.2v t rr reverse recovery time i s =20a; di s /dt = -100 a/s; v gs =0v; v ds =25v -70-ns q r recovered charge - 0.138 - nc table 6. c... |
| Description |
N-channel TrenchMOS intermediate level FET 120 A, 30 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
168.02K /
15 Page |
View
it Online |
Download Datasheet |
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