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NXP Semiconductors N.V.
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| Part No. |
BUK9225-55A
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| OCR Text |
... figure 13 - 2125m ? avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy i d =43a; v sup 55 v; r gs =50 ? ; v gs =5v; t j(init) = 25 c; unclamped --123mj table 1. quick reference data ?continued symbol paramet... |
| Description |
N-channel TrenchMOS logic level FET N沟道TrenchMOS逻辑电平场效应管
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| File Size |
183.17K /
13 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
PSMN027-100BS
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| OCR Text |
...gate charge - 30 - nc avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy v gs =10v; t j(init) =25c; i d =37a; v sup 100 v; unclamped; r gs =50 ? --59mj
psmn027-100bs all information provided in this document i... |
| Description |
N-channel 100V 26.8 m standard level MOSFET in D2PAK.
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| File Size |
197.75K /
14 Page |
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it Online |
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Fairchild Semiconductor, Corp.
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| Part No. |
SGH15N120RUFDTU
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| OCR Text |
...losses as well as short circuit ruggedness. the rufd series is designed for applications such as motor control, uninterrupted power supplies (ups) and general inverters where short circuit ruggedness is a required feature. features ? short ... |
| Description |
24 A, 1200 V, N-CHANNEL IGBT TO-3P, 3 PIN
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| File Size |
584.32K /
10 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BLF7G20L-90P BLF7G20LS-90P BLF7G20L-90P-15
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| OCR Text |
...atures and benefits ? excellent ruggedness ? high efficiency ? low r th providing excellent thermal stability ? designed for broadband operation (1427 mhz to1525 mhz, 1805 mhz to 1880 mhz and 2110 mhz to 2170 mhz) ? lower output capacitan... |
| Description |
Power LDMOS transistor BLF7G20L-90P<SOT1121A (CDFM4)|<<http://www.nxp.com/packages/SOT1121A.html<1<Always Pb-free,;BLF7G20L-90P<SOT1121A (CDFM4)|<<http://www.nxp.com/packages/SOT1121A.html<1<Always Pb-free,;
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| File Size |
156.83K /
15 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BUK9506-75B BUK9506-75B-15
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| OCR Text |
...rdering information avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy i d =75a; v sup 75 v; r gs =50 ? ; v gs =5v; t j(init) = 25 c; unclamped --852mj dynamic characteristics q gd gate-drain charge v gs =5v;... |
| Description |
N-channel TrenchMOS logic level FET N沟道TrenchMOS逻辑电平场效应管
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| File Size |
190.57K /
13 Page |
View
it Online |
Download Datasheet |
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