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SIEMENS[Siemens Semiconductor Group]
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Part No. |
Q62702-A1145 BAR81
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Description |
From old datasheet system Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)
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File Size |
46.21K /
3 Page |
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it Online |
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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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Part No. |
BF543 Q62702-F1372
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Description |
From old datasheet system Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications)
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File Size |
97.28K /
5 Page |
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it Online |
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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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Part No. |
BF999 Q62702-F1132
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Description |
Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz/ preferably in FM applications) From old datasheet system Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications)
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File Size |
116.19K /
5 Page |
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it Online |
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SIEMENS[Siemens Semiconductor Group]
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Part No. |
Q62702-F1189 BFQ82
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Description |
NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)
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File Size |
399.68K /
18 Page |
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it Online |
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SIEMENS[Siemens Semiconductor Group] SIEMENS AG
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Part No. |
Q62702-F1055 BF997
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Description |
From old datasheet system Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
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File Size |
115.16K /
7 Page |
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it Online |
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