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For pep Found Datasheets File :: 1348 Search Time::1.031ms
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				NXP Semiconductors
Part No.	BLF4G20LS-130
OCR Text	...typ max unit g p power gain p l(pep) = 130 w 13 14.6 - db rl in input return loss p l(pep) = 130 w - - 10 - 7db h d drain ef?ciency p l(pep) = 130 w 34.5 38.5 - % imd3 third order intermodulation distortion p l(pep) = 130 w - - 30 - 27 dbc ...
Description	UHF power LDMOS transistor
File Size	70.19K / 11 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	PTFA220121M
OCR Text	...37 38 39 40 41 42 output power, pep (dbm) imd (dbc) 10 15 20 25 30 35 40 45 50 efficiency (%) efficiency imd3 *see infineon distributor for future availability. ptfa220121m package pg-son-10 high power rf ldmos field effect transistor 12 w,...
Description	High Power RF LDMOS Field Effect Transistor 12 W, 700-2200 MHz
File Size	245.21K / 19 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	PTFA220081M
OCR Text	...v, i dq = 100 ma, p out = 8 w pep, ? = 2140 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps 17 db drain effciency h d 38 % intermodulation distortion imd C31 dbc h...
Description	High Power RF LDMOS Field Effect Transistor 8 W, 700-2200 MHz
File Size	1,068.89K / 16 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	PTFA212002E
OCR Text	...i dq = 1600 ma, p out = 200 w pep, f = 2140 mhz -55 -50 -45 -40 -35 -30 -25 0 10 20 30 40 tone spacing (mhz) imd (dbc) 3rd order 5th order 7th order power sweep, cw conditions v dd = 28 v, i dq = 1600 ma, f = 2140 mhz 13 14 15 16 17 40...
Description	Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110-2170 MHz
File Size	219.69K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	PTFA212001E PTFA212001F
OCR Text	..., i dq = 1.6 a, p out = 200 w pep, ? = 2140 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps ? 15.8 ? db drain efficiency h d ? 38.5 ? % intermodulation distortion imd ? ?28 ? dbc dc characteristics characteris...
Description	Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 ?2170 MHz
File Size	393.98K / 11 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	PTFA211001E
OCR Text	... ? = 2140 mhz, p out = 50 dbm pep -55 -50 -45 -40 -35 -30 -25 -20 -15 0 5 10 15 20 25 30 tone spacing (mhz) intermodulation distortion (dbc) 3rd order 5th 7th ptfa211001e data sheet 4 of 9 rev. 03, 2008-03-04 typical performance (cont....
Description	Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110-2170 MHz
File Size	215.46K / 9 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	PTFA210301E
OCR Text	..., i dq = 300 ma, p out = 30 w pep, f = 2170 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps 16 17 ? db drain efficiency h d 34 36 ? % intermodulation distortion imd ? ?32 ?30 dbc dc characteristics characteris...
Description	Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz
File Size	190.69K / 9 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRFE6VP6300HSR3 MRFE6VP6300HR3
OCR Text	...er p out , output power (watts) pep v dd =50vdc,i dq = 1600 ma, f1 = 230 mhz f2 = 230.1 mhz, two--tone measurements 3rd order -- 4 0 -- 5 0 -- 6 0 100 400 imd, intermodulatio n distortion (dbc) -- 7 0 5th order figure 11. intermodulation di...
Description	RF Power Field Effect Transistors
File Size	982.82K / 14 Page	View it Online	Download Datasheet

				Freescale Semiconductor
Part No.	MRFE6VP6300HR3
OCR Text	...er p out , output power (watts) pep v dd =50vdc,i dq = 1600 ma, f1 = 230 mhz f2 = 230.1 mhz, two--tone measurements 3rd order -- 4 0 -- 5 0 -- 6 0 100 400 imd, intermodulatio n distortion (dbc) -- 7 0 5th order figure 11. intermodulation di...
Description	RF Power Field Effect Transistors
File Size	1,061.26K / 15 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc Freescale Semiconductor...
Part No.	MRFE6VP6300HR311 MRFE6VP6300HSR3
OCR Text	...er p out , output power (watts) pep v dd =50vdc,i dq = 1600 ma, f1 = 230 mhz f2 = 230.1 mhz, two--tone measurements 3rd order -- 4 0 -- 5 0 -- 6 0 100 400 imd, intermodulatio n distortion (dbc) -- 7 0 5th order figure 11. intermodulation di...
Description	RF Power Field Effect Transistors
File Size	989.78K / 15 Page	View it Online	Download Datasheet

For pep Found Datasheets File :: 1348 Search Time::1.031ms
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