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				Rectron Semiconductor
Part No.	NSBC144WDP6T5G
OCR Text	...teristic symbol max unit single heated total device dissipation t a = 25 c (note 1) derate above 25 c p d 231 1.9 mw mw/ c thermal resistance (note 1) junction-to-ambient r ja 540 c/w total device dissipation t a = 25 c (note 2) de...
Description
File Size	117.54K / 7 Page	View it Online	Download Datasheet

				ON Semi
Part No.	BSP62T1_D ON0222
OCR Text	...vice. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress...
Description	MEDIUM POWER PNP SILICON From old datasheet system
File Size	123.28K / 6 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	BAV70DXV6T1 BAV70DXV6T5
OCR Text	...cs characteristic (one junction heated) symbol max unit total device dissipation t a = 25 c derate above 25 c p d 357 (note 2) 2.9 (note 2) mw mw/ c thermal resistance junction-to-ambient r ja 350 (note 2) c/w characteristic (both j...
Description	Small Signal Switching Diodes in SOT563
File Size	49.77K / 4 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NSS40300DDR2G
OCR Text	...teristic symbol max unit single heated total device dissipation (note 1) t a = 25 c derate above 25 c p d 576 4.6 mw mw/ c thermal resistance, junction ? to ? ambient (note 1) r ja 217 c/w total device dissipation (note 2) t a = 25 ...
Description	Dual 40 V 6.0 A / Low VCE(sat) PNP Transistor
File Size	126.98K / 6 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NSTB60ADW1T1/D NSTB60ADW1T1-D
OCR Text	...cs characteristic (one junction heated) symbol max unit total device dissipation t a = 25 c derate above 25 c p d 187 (note 1) 256 (note 2) 1.5 (note 1) 2.0 (note 2) mw mw/ c thermal resistance junction-to-ambient r q ja 670 (note 1) 4...
Description	PNP General Purpose and NPN Bias Resistor Transistor Combination
File Size	80.25K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	TDA8011 TDA8011T
OCR Text	... example, thermal conduction by heated belt, infrared, and vapour-phase reflow. Dwell times vary between 50 and 300 s according to method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and eva...
Description	IF amplifier for satellite TV receivers
File Size	74.46K / 12 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NST3946DXV6T1
OCR Text	...cs characteristic (one junction heated) symbol max unit total device dissipation t a = 25 c derate above 25 c p d 357 (note 1) 2.9 (note 1) mw mw/ c thermal resistance junction-to-ambient r ja 350 (note 1) c/w characteristic (both ju...
Description	(NST3946DXV6T1 / NST3946DXV6T5) Dual General Purpose Transistor
File Size	389.65K / 12 Page	View it Online	Download Datasheet

				MIMIX BROADBAND INC
Part No.	CMM-5-BD CMM-5-BD-000X CMM-5-BD-000W
OCR Text	...d. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximatel...
Description	2000 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 2.0-6.0 GHz GaAs MMIC Amplifier
File Size	1,142.63K / 5 Page	View it Online	Download Datasheet

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