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For ets Found Datasheets File :: 2247 Search Time::1.062ms
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				INFINEON[Infineon Technologies AG]
Part No.	Q67040S4722 Q67040S4724 IGP30N60T IGW30N60T
OCR Text	...y td(on) tr td(off) tf Eon Eoff ets T j = 25 C, V C C = 4 00V, I C = 30A, V G E = 0/ 1 5V , R G = 10. 6 , L 1 ) = 136nH, C 1 ) =39pF Energy losses include "tail" and diode reverse recovery. 2) Symbol Conditions IGP30N60T IGW30N60T Va...
Description	1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY
File Size	375.15K / 12 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	Q67040S4717 IKW30N60T
OCR Text	...s td(on) tr td(off) tf Eon Eoff ets T j = 25 C, V C C = 4 00V, I C = 30A, V G E = 0/ 1 5V , R G = 10. 6 , L 1 ) = 136nH, C 1 ) =39pF Energy losses include "tail" and diode reverse recovery. Symbol Conditions IKW30N60T q Value min. Ty...
Description	600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode 低损耗DuoPack：在IGBT的沟槽场终止技术和软，恢复快反平行何快恢复二极 From old datasheet system
File Size	394.33K / 13 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IKW50N60T Q67040S4718
OCR Text	...s td(on) tr td(off) tf Eon Eoff ets T j = 25 C, V C C = 4 00V, I C = 50A, V G E = 0/ 1 5V , RG= 7 , L 1 ) = 103nH, C 1 ) =39pF Energy losses include "tail" and diode reverse recovery. Symbol Conditions IKW50N60T q Value min. Typ. 26 2...
Description	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
File Size	413.27K / 13 Page	View it Online	Download Datasheet

				Artesyn Technologies
Part No.	SMT15E-12V SMT15E-12W3V3J
OCR Text	...2 6kV contact 8kV air NP As per ets 300 386-1 table 5 Port Standard Test level Criteria Notes and conditions Performance criteria: NP: Normal Performance: EUT shall withstand applied test and operate within relevant limits as specified w...
Description	0.8 Vin to 3.63 Vin Single output
File Size	277.12K / 12 Page	View it Online	Download Datasheet

				Artesyn Technologies
Part No.	SMT05E-12V SMT05E-12W3V3J
OCR Text	...2 6kV contact 8kV air NP As per ets 300 386-1 table 5 Port Standard Test level Criteria Notes and conditions Performance criteria: NP: Normal Performance: EUT shall withstand applied test and operate within relevant limits as specified w...
Description	0.8 Vin - 3.63 Vin Single output
File Size	217.68K / 12 Page	View it Online	Download Datasheet

				IDT
Part No.	IDT82V2108PX8
OCR Text	...1, o.151, o.152, o.153; etsi: ets 300 011, ets 300 233, ets 324-1, ets 347-1, tbr 4, tbr 12, tbr 13; go - mvip t1/j1 mode: ansi: t1.107, t1.231, t1.403, t1.408; tr: tsy-000147, tsy-000191, nwt-000303, tsy-000312, tsy-000- ...
Description	8 Channel T1/J1/E1 Framer
File Size	1,190.86K / 272 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SGW15N60 SGP15N60 SGP15N6008
OCR Text	...y td(on) tr td(off) tf Eon Eoff ets T j = 25C , V C C = 40 0 V, I C =15A, V G E = 0 /1 5 V, R G = 2 1 , L 1 ) =1 80nH , C 1 ) =2 50p F Energy losses include "tail" and diode reverse recovery. 32 23 234 46 0.30 0.27 0.57 38 28 281 55 0.36 ...
Description	Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
File Size	332.95K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies AG Infineon Technologies A...
Part No.	SKW15N12008
OCR Text	...s td(on) tr td(off) tf Eon Eoff ets T j = 25C , V C C = 80 0 V, I C =15A, V G E =15V/0V, R G = 3 3 , L 1 ) =1 80nH, C 1 ) =40pF Energy losses include "tail" and diode reverse recovery. 18 23 580 22 1.1 0.8 1.9 24 30 750 29 1.5 1.1 2.6 mJ ...
Description	Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
File Size	342.85K / 13 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IKW20N60T IKP20N60T IKB20N60T
OCR Text	...s td(on) tr td(off) tf Eon Eoff ets T j = 25 C, V C C = 4 00V, I C = 20A, V G E = 0/ 1 5V , RG=12 , L 2 ) = 131nH, C 2 ) =31pF Energy losses include "tail" and diode reverse recovery. 18 14 199 42 0.31 0.46 0.77 mJ ns Symbol Conditions Va...
Description	600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... IGBT in Trench and Fieldstop technology with soft/fast recovery anti-parallel EmCon HE diode IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
File Size	431.57K / 15 Page	View it Online	Download Datasheet

				Infineon Technologies AG http:// Infineon Technologies A...
Part No.	IGD01N120H2 IGP01N120H207
OCR Text	...y td(on) tr td(off) tf Eon Eoff ets T j =2 5 C , V C C = 80 0 V, I C = 1 A, V G E = 15 V /0 V , R G = 24 1 , 2) L =1 8 0n H, 2) C = 4 0p F Energy losses include 3) "tail" and diode reverse recovery. 13 6.3 370 28 0.08 0.06 0.14 mJ ns Symb...
Description	HighSpeed 2-Technology
File Size	905.76K / 13 Page	View it Online	Download Datasheet

For ets Found Datasheets File :: 2247 Search Time::1.062ms
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