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  ds-1e Datasheet PDF File

For ds-1e Found Datasheets File :: 1966    Search Time::2.891ms    
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    IRLU3717 IRLR3717

IRF[International Rectifier]
Part No. IRLU3717 IRLR3717
OCR Text ...TH Tj = 175C 1.0 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) 0.01 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Charac...1E-006 1E-005 0.0001 0.001 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0...
Description From old datasheet system
HEXFET Power MOSFET

File Size 265.64K  /  11 Page

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    APM2305A APM2305 APM2305AC-TR

ANPEC[Anpec Electronics Coropration]
ETC
Anpec Electronics Corporation
Part No. APM2305A APM2305 APM2305AC-TR
OCR Text ...atic BV DSS IDSS VGS(th) IGSS R DS(ON) VSDa b a (TA = 25C unless otherwise noted) APM2305 Min. Typ. Max. Parameter Test Condition...1E-4 1E-3 0.01 0.1 1 10 100 500 Square Wave Pulse Duration (sec) Copyrigh...
Description P-Channel Enhancement Mode MOSFET
Circular Connector; No. of Contacts:29; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No

File Size 158.51K  /  9 Page

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    MP972-2 MP97X-2 MP973-2 MP963-2 MP962-2 MP96X-2

PerkinElmer Inc.
PERKINELMER[PerkinElmer Optoelectronics]
Part No. MP972-2 MP97X-2 MP973-2 MP963-2 MP962-2 MP96X-2
OCR Text ...r, Inc. All rights reserved. DS-290 Rev A 1101 w w w. p e r k i n e l m e r. c o m / o p t o
Description Single Photon Counting Module for Particle Measurement

File Size 210.50K  /  2 Page

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    PHP1N60

PHILIPS[Philips Semiconductors]
Part No. PHP1N60
OCR Text ...(Amps) Tmb = 25 C R 1 (O DS N) =V D D S/I 12 10 PHP1N60A Tj = 25 C 6V 8 6 4 2 6.5 V 10 V VGS = 20 V DC 0.1 ...1E-01 1E-02 1.5 Tj = 25 C 1 150 C 1E-04 1E-03 2% typ 98 % 0.5 1E-05 0 1E-06 0 ...
Description PowerMOS transistor

File Size 53.50K  /  7 Page

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    FDI038AN06A0 FDP038AN06A0

FAIRCHILD[Fairchild Semiconductor]
Part No. FDI038AN06A0 FDP038AN06A0
OCR Text ...T 60V, 80A, 3.8m Features * r DS(ON) = 3.5m (Typ.), V GS = 10V, ID = 80A * Qg(tot) = 95nC (Typ.), VGS = 10V * Low Miller Charge * Low QRR ...1e-9 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD Ebreak 11 7 17 18 69.3 Eds 14 8 ...
Description N-Channel PowerTrench MOSFET 60V/ 80A/ 3.8m
N-Channel PowerTrench MOSFET 60V, 80A, 3.8mз
N-Channel PowerTrench ?MOSFET 60V, 80A, 3.8mOhm
N-Channel PowerTrench MOSFET 60V, 80A, 3.8mOhm

File Size 218.69K  /  10 Page

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    IRFB16N60L

IRF[International Rectifier]
Part No. IRFB16N60L
OCR Text ... f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd 25 10000 20 C, Capacitance(pF) Ciss Energy (J) 1...1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 12. Maximum Ef...
Description    SMPS MOSFET

File Size 147.12K  /  9 Page

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    IRFP26N60L

IRF[International Rectifier]
Part No. IRFP26N60L
OCR Text ..., f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd 30 25 10000 C, Capacitance(pF) Ciss 20 Energy (J) ...1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 12. Maximum Ef...
Description SMPS MOSFET

File Size 195.74K  /  9 Page

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    IRL8113 IRL8113L IRL8113S

IRF[International Rectifier]
Part No. IRL8113 IRL8113L IRL8113S
OCR Text ... = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 12 ID= 17A VGS, Gate-to-Source Voltage (V) 10 8 6 4 2 0 ...1E-006 1E-005 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Therma...
Description 30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
30V Single N-Channel HEXFET Power MOSFET in a D2Pak package
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 302.23K  /  12 Page

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    APM2512N APM2512NUC-TRL APM2512NUC-TR

ANPEC Electronics Corporation
ANPEC[Anpec Electronics Coropration]
Part No. APM2512N APM2512NUC-TRL APM2512NUC-TR
OCR Text ...tic BV DSS IDSS V GS(th) IGSS R DS(ON) V SD a b a (TA = 25C unless otherwise noted) APM2512N Typ. Max. Parameter Test Condition ...1E-4 1E-3 0.01 0.1 1 10 100300 VSD -Source-to-Drain Voltage (V) Time (sec) ...
Description 25 V, N-channel enhancement mode MOSFET
From old datasheet system

File Size 203.80K  /  9 Page

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    FDP047AN08 FDP047AN08A0

FAIRCHILD[Fairchild Semiconductor]
Part No. FDP047AN08 FDP047AN08A0
OCR Text DS(ON) = 4.0m (Typ.), V GS = 10V, ID = 80A * Qg(tot) = 92nC (Typ.), VGS = 10V * Low Miller Charge * Low Qrr Body Diode * UIS Capability (Sin...1e-9 LGATE 1 9 4.81e-9 LSOURCE 3 7 4.63e-9 MMED 16 6 8 8 MMEDMOD MSTRO 16 6 8 8 MSTROMOD MWEAK 16 21...
Description N-Channel PowerTrench MOSFET 75V/ 80A/ 4.7m
N-Channel UltraFET Trench MOSFET 75V, 80A, 4.7mз
N-Channel UltraFET Trench MOSFET 75V/ 80A/ 4.7m
N-Channel UltraFET ?Trench MOSFET 75V, 80A, 4.7mOhm

File Size 189.25K  /  10 Page

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For ds-1e Found Datasheets File :: 1966    Search Time::2.891ms    
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