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				ETC
Part No.	HLC-1520A
OCR Text	... initial capacity : 100% dod 10% dod 1% dod charged to 3.67v 4000 40,000 400,000 charged to 3.90v 1000 10,000 100,000 dod (depth of discharge) 2.2.6. cell impedance: less than 250 mohm (at rt @ 1khz) rev. d...
Description	Tadiran HLC
File Size	231.65K / 6 Page	View it Online	Download Datasheet

				Infineon
Part No.	PSB21910-NV5.1 PSB21910-FV5.1
OCR Text	...14 13 12 11 10 9 8 7 6 5 4 3 32 dod/wr/r/w n.c. 48 47 64 2 1 pcwr/ad4/d4 n.c. n.c. n.c. ddd v tsp/cs v ddd n.c. v dda1 xout v ref v dda2 n.c. n.c. n.c. n.c. n.c. n.c. cls n.c. ds/rd/mto n.c. n.c. psb 21910 v5.1 iec-q nte psb 21910 feature...
Description	IEC-Q NTE (ISDN Echocancellation Circ...
File Size	293.80K / 15 Page	View it Online	Download Datasheet

				OKI SEMICONDUCTOR CO., LTD.
Part No.	MD56V62320
OCR Text	...data input mask time from dqm l dod cycle 0 data input time from write command l dwd cycle data output high impedance time from precharge command 3 active command input time from mode register set command input (min.) l mrd cycle 2 l roh c...
Description	4-Bank x 524,288-Word x 32-Bit SYNCHRONOUS DYNAMIC RAM
File Size	415.44K / 30 Page	View it Online	Download Datasheet

				OKI SEMICONDUCTOR CO., LTD. OKI electronic componets
Part No.	MD56V62400 MD56V62400H
OCR Text	...data input mask time from dqm l dod cycle 00 data input time from write command l dwd cycle data output high impedance time from precharge command 33 active command input time from mode register set command input (min.) l mrd cycle 22 l ro...
Description	4-Bank x 4 /194 /304-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM 4-Bank x 4,194,304-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM 4，银行甲4194304字4位同步动态随机存储器
File Size	304.24K / 28 Page	View it Online	Download Datasheet

				Shenzhen Sunnyway Battery Tech Co.Ltd.
Part No.	SW12350
OCR Text	... 40 60 80 100 120 100 %d od 50% dod 30% dod 0 200 400 600 800 100 0 120 0 140 0 num ber of cyc les( cyc les) c a p a c i t y ( % ) 1600 i dis =0.17c 5 h i ch =0.10c 10 h i dis =0.17c 2 .5h i ch =0.10c 5 .0h i dis =0.17c 1 .5h i ch...
Description	General Battery
File Size	601.52K / 1 Page	View it Online	Download Datasheet

				NEC
Part No.	NL10260BC19-01D
OCR Text	dod-pp-0535 (5th edition) published date: april 2008 cp(n) ? nec lcd technologies, ltd. 2007-2008 all rights reserved. 1 this preliminary data sheet is updated document from dod-pp-0462(4). all information is subject to change wit...
Description	LCD Module
File Size	590.90K / 33 Page	View it Online	Download Datasheet

				OKI SEMICONDUCTOR CO., LTD.
Part No.	MSM54V24632A
OCR Text	...data input mask time from dqm l dod cycle data input time from write command l dwd cycle data output high impedance time from precharge command l roh active command input time from mode register set command input (min.) l mrd cycle note 1, ...
Description	131,072-Word x 32-Bit x 2-Bank SGRAM without Graphics Functions
File Size	401.32K / 29 Page	View it Online	Download Datasheet

				OKI electronic componets OKI SEMICONDUCTOR CO., LTD.
Part No.	MSM56V16160D MSM56V16160DH
OCR Text	...put mask time from udqm, ldqm l dod cycle 000 data input time from write command l dwd cycle data output high impedance time from precharge command l roh 1 1 cycle 2 2 2 cycle cl = 1 cl > 1 333 active command input time from mode register ...
Description	2-Bank 512K×16 Synchronous Dynamic RAM(212K×16动态RAM) 2-Bank x 524288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM
File Size	342.27K / 30 Page	View it Online	Download Datasheet

				OKI SEMICONDUCTOR CO., LTD.
Part No.	MSM56V16400DH-15TS-K MSM56V16400D-12TS-K
OCR Text	...data input mask time from dqm l dod cycle 000 data input time from write command l dwd cycle data output high impedance time from precharge command l roh 1 1 cycle 2 2 2 cycle cl = 1 cl > 1 333 active command input time from mode register ...
Description	2-Bank X 2,097,152-Word X 4-Bit SYNCHRONOUS DYNAMIC RAM 2，银行甲2097152字4位同步动态随机存储器
File Size	320.07K / 30 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	TEA7650H
OCR Text	...ensation the drop out detector (dod) in the ic is triggered by every positive or negative transition of the fm signal. a drop out is detected when the half-cycle period is outside the limits. protection against a drop out is achieved by use...
Description	Video signal processor for CD-video/laser vision
File Size	239.49K / 23 Page	View it Online	Download Datasheet

For dod Found Datasheets File :: 311 Search Time::2.157ms
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