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For di dt Found Datasheets File :: 40682 Search Time::1.625ms
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				SANYO[Sanyo Semicon Device]
Part No.	2SJ456
OCR Text	...ircuit. IS=--9A, VGS=0 IS=--9A, di / dt=100A / s Ratings min typ 28 125 460 160 --1.0 180 --1.5 max Unit ns ns ns ns V ns Switching Time Test Circuit VIN 0V --10V VIN ID= --5.0A RL=20.0 VDD= --100V D PW=10s D.C.1% VOUT G 2S...
Description	Ultrahigh-Speed Switching Applications
File Size	29.04K / 4 Page	View it Online	Download Datasheet

				Sanyo Electric Co., Ltd. SANYO[Sanyo Semicon Device]
Part No.	2SJ459
OCR Text	...ircuit. IS=--4A, VGS=0 IS=--4A, di / dt=100A / s --2.0 1.2 2.4 2.0 1500 230 80 35 50 300 80 -1.5 150 195 2.8 Ratings min --450 --1.0 100 --3.0 typ max Unit V mA nA V S pF pF pF ns ns ns ns V ns Marking : J459 *(Note) Care must be taken ...
Description	Ultrahigh-Speed Switching Applications Ultrahigh-Speed Switching Applications 超高速开关应 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
File Size	32.07K / 4 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ462 D11449EJ1V0DS00
OCR Text	...A, VGS = 0 IF = -2.5 A, VGS = 0 di/dt = 50 A/s 2 2SJ462 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 -10 1 m FORWARD BIAS SAFE OPERATING AREA 80 dt - Derating Factor - % ID - Drain Current - A 10 s m s ...
Description	From old datasheet system P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
File Size	60.02K / 6 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ471
OCR Text	...e trr (ns) 500 200 100 50 20 10 di / dt = 50 A / s V GS = 0, Ta = 25 C -5 -10 -20 -50 Capacitance C (pF) Typical Capacitance vs. Drain to Source Voltage 10000 5000 2000 1000 500 Crss 200 100 0 VGS = 0 f = 1 MHz -4 -8 -12 -16 -20 Ciss Coss ...
Description	Silicon P Channel DV-L MOS FET High Speed Power Switching
File Size	46.25K / 10 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ483
OCR Text	... 2000 1000 Ciss 500 200 Coss 10 di / dt = 20 A / s VGS = 0, Ta = 25 C 100 50 0 -4 -8 -12 -16 -20 Drain to Source Voltage V DS (V) Crss Typical Capacitance vs. Drain to Source Voltage 20 5 -0.1 -0.2 -0.5 -1 -2 -5 -10 Reverse Drain Curr...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
File Size	42.73K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ484
OCR Text	... Voltage 200 100 50 20 10 di / dt = 50 A / s V GS = 0, Ta = 25 C 20 10 0 -10 -20 -30 5 -0.1 -0.2 -0.5 -1 -2 -5 -10 Reverse Drain Current I DR (A) VGS = 0 f = 1 MHz -40 -50 Drain to Source Voltage V DS (V) Dynamic Input Cha...
Description	Silicon P-Channel MOS FET High Speed Power Switching
File Size	42.55K / 9 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00
OCR Text	...VGS = 0 V IF = -20 A, VGS = 0 V di/dt = 50 A / s 1210 520 180 16 140 90 80 42 8.0 10 1.0 125 280 -1.0 5.0 MIN. TYP. 70 120 -1.5 12 -10 # 10 MAX. 100 185 -2.0 UNIT m m V S A A pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT ...
Description	From old datasheet system SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	70.31K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ493 D11265EJ3V0DS00
OCR Text	... VGS = 0 V IF = 16 A, VGS = 0 V di/dt = 50 A / s 1210 520 180 15 130 95 80 42 8.0 10 1.0 120 230 -1.0 5.0 MIN. TYP. 70 120 -1.5 11 -10 # 10 MAX. 100 185 -2.0 UNIT m m V S A A pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT ...
Description	From old datasheet system SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	64.87K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ494 D11266EJ2V0DS00
OCR Text	...0 A, VGS = 0 IF = 20 A, VGS = 0 di/dt = 100 A/Ps TEST CONdiTIONS VGS = -10 V, ID = -10 A VGS = -4 V, ID = -10 A VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -10 A VDS = -60 V, VGS = 0 VGS = +20 V, VDS = 0 VDS = -10 V VGS = 0 f = 1 MHz ID = -10...
Description	From old datasheet system SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	68.73K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ495 2SJ295 D11267EJ2V0DS00
OCR Text	...0 A, VGS = 0 IF = 30 A, VGS = 0 di/dt = 100 A/s 4120 1750 580 40 220 600 380 140 12 46 0.8 160 400 1.5 -1.0 12 MIN. TYP. 24 38 -1.5 24 -10 m10 MAX. 30 56 -2.0 UNIT m m V S A A pF pF pF ns ns ns ns nC nC nC V ns nC Test Circuit 1 Swit...
Description	From old datasheet system MOS Field Effect Power Transistors SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	72.23K / 8 Page	View it Online	Download Datasheet

For di dt Found Datasheets File :: 40682 Search Time::1.625ms
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