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  dc-4.5ghz Datasheet PDF File

For dc-4.5ghz Found Datasheets File :: 1571    Search Time::2.391ms    
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    SL1003 SL1003A090 SL1003A230 SL1003A250 SL1003A260 SL1003A300 SL1003A350 SL1003A400 SL1003A450

Littelfuse, Inc.
LITTELFUSE[Littelfuse]
Part No. SL1003 SL1003A090 SL1003A230 SL1003A250 SL1003A260 SL1003A300 SL1003A350 SL1003A400 SL1003A450
OCR Text ...ive Breakover Impulse Breakover DC Voltage Voltage @ Discharge Voltage @ @100V/sec 100 V/s (Vbr) 1 kV/s (Vbr) Current2 (kA) (V) Part Numb...4-5 (3) Measured @ 100 Volts (4) Measured @ 1 MHz, 0 volt bias (5) Measured with 2/10s wave form (6)...
Description Greentube SL1003 Series Gas Plasma Arresters Greentube SL1003系列气体等离子体放电
RECTIFIER BRIDGE 10A 400V 150A-ifsm 1.1V-vf 10uA-ir PBPC8 150/BOX

File Size 217.16K  /  3 Page

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    SLX-2143 ELECTRONICTHEATRECONTROLSINC.-SLX-2143

Electronic Theatre Controls, Inc.
SIRENZA[SIRENZA MICRODEVICES]
Stanford Microdevices
List of Unclassifed Manufacturers
Part No. SLX-2143 ELECTRONICTHEATRECONTROLSINC.-SLX-2143
OCR Text ...on RF input pin. This pin is at DC ground. An external DC blocking capacitor should be used in most applications. RF output and bias pin. Bi...4 (10.16) 0.295 (7.5) 0.275 (6.98) 0.02 (0.51) 0.136 (3.45) 0.024 (0.6) 0.03 (0.76) Solder Out...
Description 1700-2200 MHz High Linearity Low Noise Amplifier Module

File Size 158.74K  /  7 Page

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    SP8855 SP8855E

Mitel Semiconductor
MITEL[Mitel Networks Corporation]
Part No. SP8855 SP8855E
OCR Text .... Pins 13 and 14 are internally DC biased. A current sink into this pin is enabled when the lock detect circuit indicates lock. Used to give...4.75V and 5.25V Characteristics Supply current15, 26 RF input sensitivity RF division ratio Referen...
Description 2.8GHz Parallel Load Professional Synthesiser
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):10mohm; Rds(on) Test

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    TGF4250 TGF4250-EEU

TriQuint Semiconductor, Inc.
TriQuint Semiconductor,Inc.
TRIQUINT[TriQuint Semiconductor]
Part No. TGF4250 TGF4250-EEU
OCR Text ... TGF4250-EEU p EXAMPLE OF DC I-V CURVES 1.1 1 0.9 VG = 0.0 to -2.25 V (0.25 V steps) T A=65C Drain Current (A) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 4 5 6 7 8 9 10 Drain Voltage (V) OUTPUT POWER VS. INPUT POWER...
Description 4.8 mm Discrete HFET 四点八毫米离散异质结场效应晶体管

File Size 179.42K  /  7 Page

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    http://
AD[Analog Devices]
adi
Analog Devices, Inc.
Part No. AD8315ACP AD8315ARM AD8315ARM-REEL AD8315ARM-REEL7 AD8315ACP-REEL7 AD8315 AD8315ACP-EVAL AD8315ACP-REEL AD8315-EVAL
OCR Text ...quency. Thus, the source may be dc grounded. The AD8315 provides a voltage output, VAPC, that has the voltage range and current drive to dir...4 V. The associated circuit determines the slope and intercept of the linear-in-dB measurement syste...
Description 50 dB GSM PA Controller
IC,AMP POWER CONTROLLER,BIPOLAR,LLCC,8PIN

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    Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BFP280W Q62702-F1504
OCR Text ...pecified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 8 100 - V A 100...4 dB 1.5 2 - IC = 6 mA, VCE = 5 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB =...
Description NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)
From old datasheet system
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)

File Size 59.70K  /  7 Page

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    SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BFP280 Q62702-F1378
OCR Text ...pecified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 8 100 - V A 100...4 0.15 0 0.42 189 15 187 nH nH nH nH nH nH fF fF fF Valid up to 6 GHz For examples and ready to u...
Description NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) NPN硅射频晶体管(对于低噪音,在移动通信系统的低功耗放大器
NPN Silicon RF Transistor (For low noise low-power amplifiers in mobile communication systems)
From old datasheet system

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    LT5534ESC6 LT5534

Linear Technology
Part No. LT5534ESC6 LT5534
OCR Text ...ale is precisely converted into DC voltage on a linear scale. The 60dB input dynamic range is achieved using cascaded RF detectors and RF li...4 LT5534 DET 1nF RF INPUT 47 ENABLE RF DET DET VCC 1.6 1 0 -1 TA = 25C TA = 85C TA = -40C -50...
Description 50MHz to 3GHz RF Power Detector with 60dB Dynamic Range
Amplifier

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    Maxim Integrated Products, Inc.
MAXIM - Dallas Semiconductor
Part No. MAX9312 MAX9314 MAX9312ECJ
OCR Text ...y affect device reliability. DC ELECTRICAL CHARACTERISTICS (VCC - VEE = +2.25V to +3.8V, outputs loaded with 50 1% to VCC - 2V.) (Notes 1-4) PARAMETER SYMBOL CONDITIONS -40C MIN MAX MIN +25C MAX MIN +85C MAX UNITS INPUTS (CLK_, CLK_...
Description Dual 1:5 Differential LVPECL/LVECL/HSTL Clock and Data Drivers LOW SKEW CLOCK DRIVER, 5 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PQFP32
Dual 1:5 Differential LVPECL/ LVECL/HSTL Clock and Data Drivers

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    2SC5504

Sanyo Semicon Device
Part No. 2SC5504
OCR Text ... Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Symbol ICBO IEBO hFE ...4 90 to 180 MN 5 135 to 270 Any and all SANYO products described or contained herein do not have ...
Description NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier Applications
NPN Epitaxial Planar Silicon Transistors

File Size 43.83K  /  6 Page

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For dc-4.5ghz Found Datasheets File :: 1571    Search Time::2.391ms    
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