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copack Datasheet PDF File

For copack Found Datasheets File :: 329 Search Time::0.828ms
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				International Rectifier IRF
Part No.	IRG4PH40UD2
OCR Text	...O-247AC package C UltraFast copack IGBT VCES = 600V G E VCE(on) typ. = 1.72V @VGE = 15V, IC = 20A n-channel Benefits Higher switching frequency capability than competitive IGBTs Highest efficiency available HEXFRED d...
Description	600V copack IGBT in a TO-3P (TO-247AC) package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	245.14K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4PH40UDPBF
OCR Text	...age * Lead-Free C UltraFast copack IGBT VCES = 1200V G E VCE(on) typ. = 2.43V @VGE = 15V, IC = 21A n-ch an nel Benefits * Higher switching frequency capability than competitive IGBTs * Highest efficiency available * HEX...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIDDE
File Size	669.34K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4PH50UDPBF IRG4PH50UDPBF-15
OCR Text	...age * Lead-Free C UltraFast copack IGBT VCES = 1200V G E VCE(on) typ. = 2.78V @VGE = 15V, IC = 24A n-cha nn el Benefits * Higher switching frequency capability than competitive IGBTs * Highest efficiency available * HEXFR...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	678.24K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRL2203NPBF
OCR Text	... 2 3 LEAD ASSIGNMENTS IGBTs, copack 1 - GATE 21- GATE DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- EMITTER 3- SOURCE 4 - DRAIN LEAD ASSIGNMENTS HEXFET 14.09 (.555) 13.47 (.530) 4- DRAIN 4.06 (.160) 3.55 (.140) 4- COLLECT...
Description	HEXFET? Power MOSFET HEXFET㈢ Power MOSFET
File Size	176.70K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRL2910PBF
OCR Text	... 2 3 LEAD ASSIGNMENTS IGBTs, copack 1 - GATE 21- GATE DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN LEAD ASSIGNMENTS HEXFET 14.09 (.555) 13.47 (.530) 4- DRAIN 4.06 (.160) 3.55 (.140) 4- COLLECT...
Description	HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) = 0.026Ω , ID = 55A ) HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) = 0.026ヘ , ID = 55A )
File Size	1,535.11K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRL530PBF
OCR Text	... 2 3 LEAD ASSIGNMENTS IGBTs, copack 1 - GATE 21- GATE DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN LEAD ASSIGNMENTS HEXFET 14.09 (.555) 13.47 (.530) 4- DRAIN 4.06 (.160) 3.55 (.140) 4- COLLECT...
Description	HEXFET? Power MOSFET HEXFET㈢ Power MOSFET
File Size	247.14K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRL540NPBF
OCR Text	... 2 3 LEAD ASSIGNMENTS IGBTs, copack 1 - GATE 21- GATE DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- EMITTER 3- SOURCE 4 - DRAIN LEAD ASSIGNMENTS HEXFET 14.09 (.555) 13.47 (.530) 4- DRAIN 4.06 (.160) 3.55 (.140) 4- COLLECT...
Description	HEXFET? Power MOSFET HEXFET㈢ Power MOSFET
File Size	1,040.50K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRL640PBF
OCR Text	... 2 3 LEAD ASSIGNMENTS IGBTs, copack 1 - GATE 21- GATE DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN LEAD ASSIGNMENTS HEXFET 14.09 (.555) 13.47 (.530) 4- DRAIN 4.06 (.160) 3.55 (.140) 4- COLLECT...
Description	HEXFET Power MOSFET ( VDSS = 200V , RDS(on) = 0.18Ω , ID = 17A ) HEXFET Power MOSFET ( VDSS = 200V , RDS(on) = 0.18ヘ , ID = 17A )
File Size	923.08K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF830PBF
OCR Text	... 2 3 LEAD ASSIGNMENTS IGBTs, copack 1 - GATE 21- GATE DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN LEAD ASSIGNMENTS HEXFET 14.09 (.555) 13.47 (.530) 4- DRAIN 4.06 (.160) 3.55 (.140) 4- COLLECT...
Description	HEXFET Power MOSFET
File Size	873.13K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4BC10UDPBF IRG4BC10UDPBF-15
OCR Text	...package Lead-Free UltraFast copack IGBT C Features VCES = 600V VCE(on) typ. = 2.15V G E @VGE = 15V, IC = 5.0A n-channel tf (typ.) = 140ns Benefits Generation 4 IGBT's offer highest efficiencies available IGBT'...
Description	INDUSTRY STANDARD TO-220AB PACKAGE INSULATED GATE BIPOLAR TRANSISROT WITH ULTRAFAST SOFR RECOVERY DIODE UltraFast copack IGBT
File Size	313.56K / 11 Page	View it Online	Download Datasheet

For copack Found Datasheets File :: 329 Search Time::0.828ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |