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Sanyo Semicon Device
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| Part No. |
2SC3994 0418 2SC39941 EN2828
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| OCR Text |
... IE=0 VEB=5V, IC=0 VCE=5V, IC=1.6a VCE=5V, IC=8A VCE=10V, IC=1.6a VCB=10V, f=1MHz 10 8 15 470 MHz pF Conditions Ratings min typ max 10 10 40...400v, 5IB1=-2.5IB2=IC=20A, RL=20 tstg tf VCC=400v, 5IB1=-2.5IB2=IC=20A, RL=20 VCC=400v, 5IB1=-2.5IB2... |
| Description |
NPN Triple Diffused Planar Silicon Transistor 800V/25A Switching Regulator Applications
From old datasheet system
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| File Size |
98.21K /
4 Page |
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http://
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| Part No. |
FMH20N60S1
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| OCR Text |
...250 300 350 400 450 500 i as =6.6a i as =4a i as =2a e av [mj] starting t ch [c] maximum avalanche energy vs. startingtch e(av)= f(starting t ch ): v cc =60v, i(av)<=6.6a
6 fmh20n60s1 7 fuji power mosfet http://www.fujielectric.com/p... |
| Description |
N-Channel enhancement mode power MOSFET
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| File Size |
309.41K /
7 Page |
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it Online |
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SEME-LAB[Seme LAB]
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| Part No. |
BUX23
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| OCR Text |
... 400v 400v 325V 390V 7V 30A 40A 6a 350W -65 to 200C 200C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate a... |
| Description |
NPN MULTI - EPITAXIAL POWER TRANSISTOR
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| File Size |
26.31K /
2 Page |
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NXP Semiconductors N.V.
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| Part No. |
BT234X-600E
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| OCR Text |
...-15ma v t on-state voltage i t =6a; t j = 25 c; see figure 10 -1.31.5v v gt gate trigger voltage v d =12v; i t = 0.1 a; t j =25c; see figure 11 -0.71.5v v d =400v; i t = 0.1 a; t j =125c; see figure 11 0.25 0.4 - v i d off-state current... |
| Description |
4Q Triac
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| File Size |
164.92K /
14 Page |
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it Online |
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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
IRFY11N50CMA
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| OCR Text |
...C, ID = 1.0mA VGS = 10V, ID = 6.6a VGS = 10V, ID = 10A VDS = VGS, ID = 250A VDS 15V, IDS = 6.6a VDS = 500V ,VGS=0V VDS = 400v, VGS = 0V, TJ =125C VGS = 20V VGS = -20V VGS =10V, ID = 10A VDS = 400v VDD = 250V, ID = 10A, VGS =10V, RG = 9.1... |
| Description |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 10A I(D) | TO-257AA 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 10A条（丁）|57AA
HEXFET POWER MOSFET THRU-HOLE (TO-257AA)
500V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
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| File Size |
103.90K /
7 Page |
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it Online |
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