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630a Datasheet PDF File

For 630a Found Datasheets File :: 8587 Search Time::1.531ms
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				IRF[International Rectifier]
Part No.	IRFU2407 IRFR2407
OCR Text	...for 10 seconds Mounting Torque, 6-32 or M3 screw Max. 42 29 170 110 0.71 20 130 25 11 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in...30A ISD 25A, di/dt 290A/s, VDD V(BR)DSS, TJ 175C 2 www.irf.com IRFR/U2407 1000 V...
Description	Power MOSFET(Vdss=75V, Rds(on)=0.026ohm, Id=42A? Power MOSFET(Vdss=75V, Rds(on)=0.026ohm, Id=42A) HEXFET? Power MOSFET Power MOSFET(Vdss=75V Rds(on)=0.026ohm Id=42A) Power MOSFET(Vdss=75V, Rds(on)=0.026ohm, Id=42A?)
File Size	125.42K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFU3505 IRFR3505
OCR Text	... = 28V --- ID = 30A ns --- RG = 6.8 --- VGS = 10V D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V,...
Description	AUTOMOTIVE MOSFET
File Size	580.87K / 11 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRFU3709Z IRFR3709Z IRFR3709ZPBF IRFU3709ZPBF
OCR Text	... IRFR3709Z IRFU3709Z Qg 17nC 6.5m: VDSS RDS(on) max 30V D-Pak IRFR3709Z I-Pak IRFU3709Z Absolute Maximum Ratings Parameter ...30A VGS = 10V 100 1.5 10 T J = 175C 1.0 1 T J = 25C VDS = 15V 20s PULSE WIDTH ...
Description	30V Single N-Channel HEXFET Power MOSFET in a I-Pak package HEXFET Power MOSFET HEXFET功率MOSFET 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
File Size	213.39K / 11 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRFU4105Z IRFR4105Z
OCR Text	...for 10 seconds Mounting Torque, 6-32 or M3 screw h 29 46 See Fig.12a, 12b, 15, 16 -55 to + 175 g C 300 (1.6mm from case ) 10 lbfyin (1.1Nym) Thermal Resistance Parameter RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB...
Description	55V Single N-Channel HEXFET Power MOSFET in a I-Pak package Power MOSFET(Vds=55V, Rds(on)=24.5mohm, Id=30A) 功率MOSFET（讥\u003d 55V的，的Rds（on）\u003d 24.5mohm，身份证\u003d 30A条） Power MOSFET(Vds=55V / Rds(on)=24.5mohm / Id=30A) 55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
File Size	203.46K / 11 Page	View it Online	Download Datasheet

				IXYS, Corp. IXYS[IXYS Corporation]
Part No.	IXFTN100 IXFX15N100 IXFH14N100 IXFHN100 IXFX14N100 IXFT14N100 IXFT15N100
OCR Text	...268 (D3) (IXFT) G S (TAB) 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 1.13/10 6 Features q International standard pa...30A = 10mA IG=10mA IXFT14N100 IXFT15N100 IXFX15N100 IXFX14N100 5000 Ciss VGS - Volts ...
Description	HiPerFET Power MOSFETs 14 A, 1000 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET Discrete MOSFETs: HiPerFET Power MOSFETS
File Size	115.80K / 4 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXTK62N25
OCR Text	...e D = Drain Tab = Drain 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 300 0.7/6 10 * Low RDS (on) HDMOSTM process...30A, -di/dt = 100 A/s, VR = 100V 360 6 ns C IXYS reserves the right to change limits, test con...
Description	High Current MegaMOSFET High Current MegaMOSFET
File Size	84.40K / 2 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K6X4016C3F-TQ55 K6X4016C3F-TF55 K6X4016C3F K6X4016C3F-TQ70 K6X4016C3F-B K6X4016C3F-F K6X4016C3F-Q K6X4016C3F-TB55 K6X4016C3F-TB70 K6X4016C3F-TF70
OCR Text	...E A17 A16 A15 A14 A13 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE UB LB I/O16 I/O15 I/O14 I/O13 Vss Vcc I/O12 I/O11 I/O10 I/O9 N.C A8 A9 A10 A11 A12 ...
Description	256Kx16 bit Low Power full CMOS Static RAM 256Kx16位充分的CMOS低功耗静态存储器
File Size	129.39K / 9 Page	View it Online	Download Datasheet

				http:// Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K6X8008C2B-TQ55 DSK6X8008C2B K6X8008C2B K6X8008C2B-B K6X8008C2B-F K6X8008C2B-Q K6X8008C2B-TB55 K6X8008C2B-TB70 K6X8008C2B-TF55 K6X8008C2B-TF70 K6X8008C2B-TQ70 DS_K6X8008C2B
OCR Text	...E A19 A18 A17 A16 A15 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE CS2 A8 NC NC I/O8 I/O7 Vss Vcc I/O6 I/O5 NC NC A9 A10 A11 A12 A13 A14 FUNCTIONAL...
Description	1Mx8 bit Low Power and Low Voltage CMOS Static RAM 1Mx8位低功耗和低电压的CMOS静态RAM
File Size	129.87K / 9 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	PM30CTJ060-3
OCR Text	... : TERMINAL NAME 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. VUPC UP VUP1 VVPC VP VVP1 VWPC WP VWP1 VNC 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. VN1 UN VN...30A, Tj = 25C IC = 30A, Tj = 125C -IC = 30A, VD = 15V, ICIN = 0mA VD = 15V, ICIN = 10mA VD = 15V, IC...
Description	MITSUBISHI INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
File Size	132.77K / 6 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	PM30CTJ060
OCR Text	... : TERMINAL NAME 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. VUPC UP VUP1 VVPC VP VVP1 VWPC WP VWP1 VNC 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. VN1 UN VN...30A, Tj = 25C IC = 30A, Tj = 125C -IC = 30A, VD = 15V, ICIN = 0mA VD = 15V, ICIN = 10mA VD = 15V, IC...
Description	MITSUBISHI INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
File Size	129.87K / 6 Page	View it Online	Download Datasheet

For 630a Found Datasheets File :: 8587 Search Time::1.531ms
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