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  5.8-ghz Datasheet PDF File

For 5.8-ghz Found Datasheets File :: 24919    Search Time::1.484ms    
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    ATF-34143 ATF-34143-BLK ATF-34143-TR1 ATF-34143-TR2 DEMO-ATF3X14-33

ETC
HP[Agilent(Hewlett-Packard)]
Part No. ATF-34143 ATF-34143-BLK ATF-34143-TR1 ATF-34143-TR2 DEMO-ATF3X14-33
OCR Text ... 1.9 GHz; 4 V, 60 mA (Typ.) * 0.5 dB Noise Figure * 17.5 dB Associated Gain * 20 dBm Output Power at 1 dB Gain Compression * 31.5 dBm Output...8 30 31 32 33 34 35 OIP3 (dBm) Figure 1. Typical/Pulsed I-V Curves[6]. (VGS ...
Description 评估板,亚欧信托基金X14300兆赫930-1990兆赫频率
Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package

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    ATF-36077 ATF-36077-STR ATF-36077-TRL ATF36077 ATF-36077-TR1

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-36077 ATF-36077-STR ATF-36077-TRL ATF36077 ATF-36077-TR1
OCR Text ...ogy * Ultra-Low Noise Figure: 0.5 dB Typical at 12 GHz 0.3 dB Typical at 4 GHz * High Associated Gain: 12 dB Typical at 12 GHz 17 dB Typical...8 NF[1] 10 The repeatable performance and consistency make it appropriate for use in Ku-band D...
Description 1.5-18GHz surface mount pseudomorphic HEMT
2-18 GHz Ultra Low Noise Pseudomorphic HEMT

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    ATF-36163 ATF-36163-BLK ATF-36163-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-36163 ATF-36163-BLK ATF-36163-TR1
OCR Text 5 - 18 GHz Surface Mount Pseudomorphic HEMT Technical Data ATF-36163 Features * Low Minimum Noise Figure: 1 dB Typical at 12 GHz 0.6 dB...8 dB Typical at 4 GHz * Maximum Available Gain: 11 dB Typical at 12 GHz 17 dB Typical at 4 GHz * Low...
Description 1.5-18 GHz Surface Mount Pseudomorphic HEMT

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    ATF-44101

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-44101
OCR Text ...igh Gain at 1 dB Compression: 8.5 dB Typical G 1 dB at 4 GHz * High Power Efficiency: 35% Typical at 4 GHz * Hermetic Metal-Ceramic Stripline Package range. This nominally .5 micron gate length GaAs FET is an interdigitated four-cell str...
Description 2-8 GHz Medium Power Gallium Arsenide FET

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    ATF-45101

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-45101
OCR Text ...kage range. This nominally 0.5 micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between...8 GHz frequency Electrical Specifications, TA = 25C Symbol P1 dB G1 dB add gm IDSS VP Parameters...
Description 2-8 GHz Medium Power Gallium Arsenide FET

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    ATF-45171

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-45171
OCR Text ...igh Gain at 1dB Compression: 10.5 dB Typical G1 dB at 4 GHz * High Power Efficiency: 38% Typical at 4 GHz * Hermetic Metal-Ceramic Stripline...8 GHz frequency Electrical Specifications, TA = 25C Symbol P1 dB G1 dB add gm IDSS VP Parameters...
Description 2-8 GHz Medium Power Gallium Arsenide FET

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    ATF-46101

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-46101
OCR Text ...equency range. This nominally 0.5 micron Electrical Specifications, TA = 25C Symbol P1 dB G1 dB add gm IDSS VP Parameters and Test Condi...8.0 GHz f = 4.0 GHz f = 8.0 GHz f = 4.0 GHz Units dBm dB % mmho mA V 200 -5.4 Min. 25.0 9.0 Typ. Max...
Description 2-10 GHz Medium Power Gallium Arsenide FET

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    ATF-46171

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-46171
OCR Text ...kage range. This nominally 0.5 micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between...8.0 GHz f = 4.0 GHz f = 8.0 GHz f = 4.0 GHz Units dBm dB % mmho mA V 200 -5.4 Min. 25.0 10.0 Typ. Ma...
Description 2-10 GHz Medium Power Gallium Arsenide FET(2-10 GHz 中等功率砷化FET)

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    BAP63-03

Leshan Radio Company, Ltd.
乐山无线电股份有限公
LRC[Leshan Radio Company]
Part No. BAP63-03
OCR Text ...z V R = 20 V; f = 1 MHz I F = 0.5 mA; f = 100 MHz; note 1 I F = 1 mA; f = 100 MHz; note 1 I F = 10 mA; f = 100 MHz; note 1 |s 21| 2 TYP. 0.95 - 0.4 0.35 0.27 2.5 1.95 1.17 0.9 15.4 10.1 7.8 0.21 0.28 0.38 0.18 0.26 0.35 0.13 0.20 0.30 0...
Description Silicon PIN diode 硅PIN二极

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    BAT14-014 BAT14-034 BAT14-044 BAT14-064 BAT14-074 BAT14-094 BAT14-104 BAT14-114 BAT14-124 BAT14-4 Q62702-D1019 Q62702-D1

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
INFINEON TECHNOLOGIES AG
Part No. BAT14-014 BAT14-034 BAT14-044 BAT14-064 BAT14-074 BAT14-094 BAT14-104 BAT14-114 BAT14-124 BAT14-4 Q62702-D1019 Q62702-D1036 Q62702-D1066 Q62702-D1005 Q62702-D1026 Q62702-D1041 Q62702-D1051 Q62702-D1056 Q62702-D1061 Q62702-P1139
OCR Text ...p. - 0.42 0.43 0.44 0.46 0.47 0.5 0.53 0.55 0.58 0.63 max. - - - - - - - - - - - pF V Unit Case capacitance Noise figure (single sideb...8 - - - - - - - - - - - - - - - - - - BAT 14- ... BAT 14- ... 4 Forward current IF = f (VF...
Description Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE
Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE
Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) 硅肖特基二极管(培养基检测器和调音台的应用气密陶瓷封装垒二极管)
Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE
GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters 砷化镓红外Lumineszenzdioden砷化镓红外辐射器

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