4.9ghz pdf Datasheet P15 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : SD166 9290705 KA3843AM 47110 74C926 3005C DDZ5V1B1 APE0504
	Product Description
	Full Text Search

4.9ghz Datasheet PDF File

For 4.9ghz Found Datasheets File :: 804 Search Time::1.391ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |

				PHILIPS[Philips Semiconductors]
Part No.	SA620DK SA620
OCR Text	...LE 1 LNA GND 2 LNA IN 3 LNA GND 4 LNA GND 5 20 VCC 19 LNA GND 18 LNA OUT 17 LNA BIAS 16 MIXER IN 15 MIXER GND 14 MIXER BYPASS 13 MIXER OUT 1...9GHz, fLO = 0.8GHz, fIF = 100MHz fS = 0.9GHz, fLO = 0.8GHz, fIF = 100MHz 900MHz 900MHz 900MHz f2-f1 ...
Description	Low voltage LNA mixer and VCO - 1GHz Low voltage LNA, mixer and VCO - 1GHz
File Size	330.13K / 11 Page	View it Online	Download Datasheet

				Sanyo
Part No.	2SC4405
OCR Text	...) Marking : OY hFE rank : 2, 3, 4 * For CP package version, use the 2SC3775. 40 2 80 60 3 120 100 4 200 Any an...9GHz VCE=10V, IC=20mA, f=0.9GHz VCE=10V, IC=5mA, f=0.9GHz See specified Test Circuit. Ratings min 8....
Description	NPN Epitaxial Planar Silicon Transistor UHF, Low-Noise, Wide-Band Amplifier Applications
File Size	111.73K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGFL48V1920
OCR Text	... 6.0 3 15.2 24.00.3 16.4 1.9 QUALITY GRADE IG 3.50.4 1 2 3 gate source drain GF-47 RECOMMENDED BIAS CONDITION...9GHz 80 70 OUTPUT POWER(dBm) 60 50 40 POWER ADDED EFFICIENCY(%) 50 Vds=12V 45 40 35 30 Vds=10V...
Description	From old datasheet system 1.9-2.0GHz BAND 60W GaAs FET
File Size	324.67K / 6 Page	View it Online	Download Datasheet

				Toshiba Corporation Toshiba Semiconductor
Part No.	TIM5964-35SLA-251
OCR Text	... TYP. MAX. 6500 -2.5 20 1.0 -4.0 26 1.3 The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of t...
Description	MICROWAVE POWER GaAs FET TIM5964-35SLA-251 From old datasheet system
File Size	36.69K / 4 Page	View it Online	Download Datasheet

				Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
Part No.	TIM5964-4UL TIM4450-4UL
OCR Text	... V A V C/W -1.0 -5 -2.5 2.6 4.5 -4.0 3.5 6.0 Rth(c-c) Channel to Case The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringemen...
Description	MICROWAVE POWER GaAs FET From old datasheet system
File Size	68.69K / 4 Page	View it Online	Download Datasheet

				Sanyo
Part No.	2SC3778 0378
OCR Text	...it. Ratings min 8 typ 10 14 2.2 4.5 max Unit dB dB dB NF Test Circuit 900MHz C1 C2 C3 C4 C5 L1 L2 L3 CH ~5pF ~10pF ~10pF ~10pF ~10pF W 1.5mm, l 25mm Strip line W 4mm, l 25mm Strip line 0.5, l 40mm 2t+bead core No.1951-2/5 2...
Description	NPN Epitaxial Planar Silicon Transistor UHF Low-Noise Amplifier, Wide-Band Amplifier Applications From old datasheet system NPN Epitaxial Planar Silicon Transistors
File Size	124.32K / 5 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	BFP181
OCR Text	...Hz F = 1.45 dB at 900 MHz 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP18...9GHz VCE = Parameter 24 10V dB 5V Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 18 ...
Description	NPN Silicon RF Transistor
File Size	77.16K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group] Infineon
Part No.	BFP183R Q62702-F1594
OCR Text	...3R RHs Q62702-F1594 1=E 2=C 3=E 4=B Package SOT-143R Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Col...9GHz VCE = Parameter 22 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 16 dB 10V...
Description	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA) From old datasheet system
File Size	58.40K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group] Infineon
Part No.	BFP183W Q62702-F1503
OCR Text	...3W RHs Q62702-F1503 1=E 2=C 3=E 4=B Package SOT-343 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Coll...9GHz VCE = Parameter 24 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 18 dB 10V 5V 3V...
Description	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) From old datasheet system
File Size	59.61K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BFS483 Q62702-F1574 Q62702F1574
OCR Text	...tion BFS 483 RHs Q62702-F1574 1/4 = B 2/5 = E 3/6 = C Package SOT-363 data below is of a single transistor Maximum Ratings Paramete...9GHz VCE = Parameter 20 dB Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 14 dB ...
Description	NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at colector current from 2mA to 28mA) NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) NPN硅射频晶体管（对于低噪声，高增益的colector2mA至二十八毫安目前的宽带放大器 NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR TRANSISTOR R.F SOT363 From old datasheet system
File Size	53.84K / 6 Page	View it Online	Download Datasheet

For 4.9ghz Found Datasheets File :: 804 Search Time::1.391ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |