4.6-5.8a pdf Datasheet P15 Full Text Search --- IC-ON-LINE


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4.6-5.8a Datasheet PDF File

For 4.6-5.8a Found Datasheets File :: 14356 Search Time::2.438ms
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				International Rectifier
Part No.	IR2112
OCR Text	...Lead DIP) (14 Lead DIP w/o Lead 4) (16 Lead DIP w/o Leads 5 & 6) (16 Lead SOIC) Value Min. -0.3 VB - 25 VS - 0.3 -0.3 -0.3 -0.3 VCC - 25 VSS - 0.3 -- -- -- -- -- -- -- -- -- -- -55 -- Max. 625 VB + 0.3 VB + 0.3 25 VCC + 0.3 VSS + 25...
Description	HIGH AND LOW SIDE DRIVER
File Size	379.67K / 14 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IR2113
OCR Text	...Lead DIP) (14 Lead DIP w/o Lead 4) (16 Lead DIP w/o Leads 5 & 6) (16 Lead SOIC) Value Min. -0.3 VB - 25 VS - 0.3 -0.3 -0.3 -0.3 VCC - 25 VSS - 0.3 -- -- -- -- -- -- -- -- -- -- -55 -- Max. 625 VB + 0.3 VB + 0.3 25 VCC + 0.3 VSS + 25...
Description	HIGH AND LOW SIDE DRIVER
File Size	388.64K / 14 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IR2184 IR21844 IR21844S IR2184S
OCR Text	4)(S) Features HALF-BRIDGE DRIVER Packages 14-Lead PDIP IR21844 8-Lead SOIC IR2184S * Floating channel designed for bootstrap opera...6 1.0 125 200 75 120 150 150 300 Units V V/ns W RthJA Thermal resistance, junction...
Description	HALF-BRIDGE DRIVER
File Size	180.90K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7301 IRF7301TR
OCR Text	... 2 VDSS = 20V 3 6 4 5 RDS(on) = 0.050 T o p V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon a...
Description	FERRITE BEAD BLM21A601S Power MOSFET(Vdss=20V Rds(on)=0.050ohm) Power MOSFET(Vdss=20V, Rds(on)=0.050ohm) 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	109.86K / 9 Page	View it Online	Download Datasheet

				International Rectifier http://
Part No.	IRF7303 IRF7303TR
OCR Text	... 7 VDSS = 30V 3 6 4 5 RDS(on) = 0.050 Top View Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefi...
Description	Generation V Technology 30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss=30V, Rds(on)=0.050ohm)
File Size	107.34K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7304
OCR Text	... 7 VDSS = -20V 3 6 4 5 RDS(on) = 0.090 Top View SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ, TSTG 10 Sec. Pulsed Drain Current, V GS @ -4.5V C...
Description	Generation V Technology
File Size	205.83K / 6 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7306 IRF7306TR IRF7306TRPBF
OCR Text	... 7 VDSS = -30V 3 6 4 5 RDS(on) = 0.10 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefi...
Description	Generation V Technology -30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
File Size	109.78K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7307 IRF7307TR
OCR Text	...N-Ch VDSS 20V P-Ch -20V 3 4 6 5 P-C H AN N E L M OS FE T T op V iew RDS(on) 0.050 0.090 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-r...
Description	20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
File Size	190.19K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7309 IRF7309TR IRF7309PBF
OCR Text	... 2 7 3 6 D2 D2 4 5 P-CHANNEL MOSFET RDS(on) 0.050 0.10 Top View SO-8 Absolute Maximum Ratings Parameter N-Channel ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ, TSTG 10 Sec. Pul...
Description	30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
File Size	161.00K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7311
OCR Text	... 2 VDSS = 20V 3 6 4 5 RDS(on) = 0.029 T o p V ie w Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. ...
Description	HEXFET Power MOSFET
File Size	154.76K / 7 Page	View it Online	Download Datasheet

For 4.6-5.8a Found Datasheets File :: 14356 Search Time::2.438ms
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