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				Dynex Semiconductor
Part No.	MAS110S
OCR Text	... KEY PARAMETERS VDRM 1400V ITSM 2000A IT(AV) per arm 110A Visol 2500V tq 10/12/15s DESCRIPTION The MAS 110S is a fast thyristor/diode module in an electrically isolated package. The semiconductors are are pressure contact mounted giving...
Description	Fast Turn-off Asymmetric Thyristor/Diode Module
File Size	49.12K / 9 Page	View it Online	Download Datasheet

				DYNEX[Dynex Semiconductor]
Part No.	DF68540 DF68541 DF68542 DF68543 DF68544 DF68545 DF685
OCR Text	... IRR 1000 IF = 4000A IF = 2000A IF = 1000A IF = 200A IF = 500A IF = 100A 100 1 10 100 Rate of rise of reverse current dIR/dt - (A/s) Fig. 4 Recovered charge 1000 10000 Conditions: Tj = 150C, VR = 100V Reverse recove...
Description	Fast Recovery Diode
File Size	70.12K / 8 Page	View it Online	Download Datasheet

				Dynex Semiconductor, Ltd. DYNEX[Dynex Semiconductor]
Part No.	DS2009SF DS2009SF43 DS2009SF44 DS2009SF45 DS2009SF46 DS2009SF47 DS2009SF48
OCR Text	...5oC At VRRM, Tcase = 150oC IF = 2000A, dIRR/dt = 3A/s, Tcase = 150C, VR = 100V At Tvj = 150C At Tvj = 150C Min. Max. 1.8 75 4000 115 0.84 0.383 Units V mA C A V m CURVES 5000 4000 Measured under pulse conditions 4000 Instantaneo...
Description	Rectifier Diode 1428 A, 4400 V, SILICON, RECTIFIER DIODE Rectifier Diode 1428 A, 4600 V, SILICON, RECTIFIER DIODE Rectifier Diode 1428 A, 4300 V, SILICON, RECTIFIER DIODE
File Size	89.64K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	SD853C S50K
OCR Text	...I > x IF(AV)),TJ = TJ max. I = 2000A, TJ = 125C, t = 10ms sinusoidal wave pk p Low level value of forward slope resistance 0.70 r f2 High level value of forward slope resistance V FM Max. forward voltage drop Recov...
Description	FAST RECOVERY DIODES Hockey Puk Version
File Size	278.21K / 11 Page	View it Online	Download Datasheet

				http:// DYNEX[Dynex Semiconductor]
Part No.	RD65FV06 RD65FV RD65FV01 RD65FV02 RD65FV03 RD65FV04 RD65FV05
OCR Text	...ions At VRRM, Tcase = 200C IF = 2000A, dIRR/dt = 3A/s, Tcase = 200C, VR = 100V At Tvj = 200C At Tvj = 200C Min. Max. 150 230 39 0.6 0.0225 Units mA A C V m 3/7 www.dynexsemi.com RD65FV CURVES 8000 Tj = 200C 7000 14000 12000 16...
Description	Rectifier Diode Target Information
File Size	98.17K / 7 Page	View it Online	Download Datasheet

				DYNEX SEMICONDUCTOR LTD Dynex Semiconductor, Ltd. DYNEX[Dynex Semiconductor]
Part No.	RD43FF06 RD43FF RD43FF01 RD43FF02 RD43FF03 RD43FF04 RD43FF05
OCR Text	...ions At VRRM, Tcase = 200C IF = 2000A, dIRR/dt = 3A/s, Tcase = 200C, VR = 100V At Tvj = 200C At Tvj = 200C Min. Max. 50 25 150 0.6 0.0514 Units mA A C V m 3/7 www.dynexsemi.com RD43FF CURVES 6000 Tj = 200C 5000 7000 dc 1/2...
Description	Rectifier Diode Target Information 4466 A, 100 V, SILICON, RECTIFIER DIODE
File Size	96.23K / 7 Page	View it Online	Download Datasheet

				Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor] Dynex Semiconductor, Ltd.
Part No.	DSF11060SG DSF11060SG55 DSF11060SG56 DSF11060SG58 DSF11060SG60
OCR Text	.../dt IRR A B 1000 D E A: IF = 2000A B: IF = 1000A C: IF = 500A D: IF = 200A 100 E: IF = 100A 1 10 100 Rate of rise of reverse current dIR/dt - (A/s) Fig. 1 Recovered charge C 1000 3/6 DSF11060SG 10000 Conditions: Tj = 125C...
Description	Fast Recovery Diode 16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 400 A, 5600 V, SILICON, RECTIFIER DIODE
File Size	48.34K / 6 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	MCTV75P60E1 MCTA75P60E1
OCR Text	...aximum) at I = 75A and +150oC * 2000A Surge Current Capability * 2000A/s di/dt Capability * MOS Insulated Gate Control * 120A Gate Turn-Off Capability at +150oC Description The MCT is an MOS Controlled Thyristor designed for switching c...
Description	75A / 600V P-Type MOS Controlled Thyristor (MCT) 75A, 600V P-Type MOS Controlled Thyristor (MCT)
File Size	49.68K / 5 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	MCT3D65P100F2 MCT3A65P100F2
OCR Text	...4V (Max) at I = 65A and 150oC * 2000A Surge Current Capability * 2000A/s di/dt Capability * MOS Insulated Gate Control * 100A Gate Turn-Off Capability at 150oC Description The MCT is an MOS Controlled Thyristor designed for switching cu...
Description	65A, 1000V, P-Type MOS-Controlled Thyristor (MCT) DIODE ZENER SINGLE 500mW 3.9Vz 5mA-Izt 0.05 3uA-Ir 1 PowerDI-323 3K/REEL 65A / 1000V / P-Type MOS-Controlled Thyristor (MCT)
File Size	67.37K / 8 Page	View it Online	Download Datasheet

				Dynex Semiconductor
Part No.	DCR6430M18 DCR6430M20 DCR6430M22
OCR Text	...s) conditons: t j =125 c i t =2000a vr=0 0 300 600 900 1200 1500 1 10 100 reverse recovery current, i rr - (a) rate of decay of on - state current, di/dt - (a/us) conditons: t j =125 c i t =2000a v r =0 semiconductor dcr 6430m ...
Description	Phase Control Thyristor
File Size	675.08K / 9 Page	View it Online	Download Datasheet

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