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NXP Semiconductors N.V.
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| Part No. |
BYM357X_2 BYM357X127
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| OCR Text |
...
tp
D=
tp T t
0.001 1us
T
10us
100us 1ms 10ms 100ms 1s pulse width, tp (s) BYV29F
10s
0.001 1us
T
10us
100us 1ms 10ms 100ms 1s pulse width, tp (s) BY359F
10s
Fig.7. Modulator transient thermal imped... |
| Description |
10 A, 1500 V, SILICON, RECTIFIER DIODE
From old datasheet system
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| File Size |
42.75K /
7 Page |
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it Online |
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HYNIX
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| Part No. |
HY62SF16806A-I HY62SF16806A-C
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| OCR Text |
...20ns Change DC Parameter - Icc1(1us) : 5mA a 4mA Change Data Retention - IccDR(LL) : 25uA a 15uA Change AC Parameter - tOE : 40ns a 35ns@70ns Draft Date Apr.10.2001 Apr.28.2001 Remark Preliminary
02
Jul.18.2001
03
Jan.28.2002
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| Description |
High speed, super low power and 8M bit full CMOS SRAM organized as 524,288 words by 16bits
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| File Size |
136.14K /
11 Page |
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it Online |
Download Datasheet |
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HYNIX SEMICONDUCTOR INC
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| Part No. |
HY62SF16804A-I HY62SF16804A-C HY62SF16804A-SM10I
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| OCR Text |
...20ns Change DC Parameter - Icc1(1us) : 5mA a 4mA Change Data Retention - IccDR(LL) : 25uA a 15uA Change AC Parameter - tOE : 40ns a 35ns@70ns Draft Date Jul.02.2000 Remark Preliminary
05
Oct.23.2000
Preliminary
06
Nov.13.2000... |
| Description |
512K X 16 STANDARD SRAM, 100 ns, PBGA48
High speed, super low power and 8M bit full CMOS SRAM organized as 524,288 words by 16bits
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| File Size |
134.73K /
10 Page |
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it Online |
Download Datasheet |
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HYNIX
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| Part No. |
HY62LF16806A-C HY62LF16806A-I
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| OCR Text |
...uA a - Isb1(Typ) : 8uA a - Icc1(1us) : 5mA a Change Data Retention - IccDR(LL) : 25uA a Change AC Parameter - tOE : 40ns a 25uA 1uA 4mA 15uA 35ns@70ns Draft Date Apr.10.2001 Apr.28.2001 Remark Preliminary
02
Jan.28.2002
This docume... |
| Description |
High speed, super low power and 8M bit full CMOS SRAM organized as 524,288 words by 16bits
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| File Size |
150.39K /
11 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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