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    IRF4905 IRF4B905 IRF4905PBF

International Rectifier, Corp.
Part No. IRF4905 IRF4B905 IRF4905PBF
OCR Text ... 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 20 td(on) tr t d(off) tf VGS 0 25 50 75 100 125 150 175 10% TC , Case Temperature ( C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fi...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条）
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
File Size 104.67K  /  8 Page

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ...y Factor 0.1 % 20 15 Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf 10 VGS 5 10% 0 25 50 75 100 125 150 175 90% VDS TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature F...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size 167.31K  /  10 Page

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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ...Duty Factor 0.1 % 15 Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf 10 VGS 5 10% 0 25 50 75 100 125 150 175 90% VDS TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size 120.44K  /  8 Page

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ...Duty Factor 0.1 % 10 Fig 10a. Switching Time Test Circuit 5 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature 10 Fig 10...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)
File Size 174.65K  /  10 Page

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    IRF7106 IRF7106TR

IRF[International Rectifier]
Part No. IRF7106 IRF7106TR
OCR Text ...ps) 2.0 1.5 1.0 Fig 10a. Switching Time Test Circuit 0.5 0.0 25 50 75 100 125 A 150 TA , Ambient Temperature (C) Fig 9. Maximum Drain Current Vs. Ambient Temperature Fig 10b. Switching Time Waveforms Fig 11a. Ga...
Description 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss= -20V)
File Size 157.44K  /  7 Page

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    IRF840AL IRF840AS IRF840ASTRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840AL IRF840AS IRF840ASTRR
OCR Text ... 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Swi...
Description TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 8A条（丁）|63AB
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）最大值\u003d 0.85ohm，身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)
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    IRF840A

IRF[International Rectifier]
Part No. IRF840A
OCR Text ... 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Swi...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)
File Size 87.92K  /  8 Page

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    IRF840LCL IRF840LCS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840LCL IRF840LCS
OCR Text ... 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit VDS 90% Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient The...
Description Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）\u003d 0.85ohm，身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)
File Size 169.91K  /  10 Page

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    IRF9150

Samsung semiconductor
International Rectifier
Intersil Corporation
Part No. IRF9150
OCR Text ...)MAX, VGS = 10V VGS = 20V ID = -10a, VGS = -10V (Figures 8, 9) VDS = -10V, ID = -12.5 (Figure 12) VDD = -50V, ID -25A, RG = 6.8, RL = 2.0, (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature MIN ...
Description -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
File Size 56.86K  /  7 Page

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    IRF9230 JANTXV2N6806 JANTX2N6806

IRF[International Rectifier]
Part No. IRF9230 JANTXV2N6806 JANTX2N6806
OCR Text ... 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf VGS 10% Fig 9. Maximum Drain Current Vs. Case Temperature 90% VDS Fig 10b. Switching Time Waveforms Fig 11. Maximum Effecti...
Description TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)
CAP CER 250VAC 82PF 5% SL 1808
6.5 A, 200 V, 0.92 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
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