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  0.7ghz Datasheet PDF File

For 0.7ghz Found Datasheets File :: 677    Search Time::2ms    
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    FLM5964-25F

List of Unclassifed Manufacturers
Part No. FLM5964-25F
OCR Text ...e currents should not exceed 64.0 and -11.2 mA respectively with gate resistance of 25. ELECTRICAL CHARACTERISTICS (Ambient Temperature T...7GHz 5.8 5.8 5.9 6.0 5.9 6.0 6.1 6.2 6.3 250 +j50 +j25 +90 S21 S12 +j10 +j250 6.3 6....
Description C-Band Internally Matched FET

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    FLM5964-4F

List of Unclassifed Manufacturers
ETC
Part No. FLM5964-4F
OCR Text ...e currents should not exceed 16.0 and -2.2 mA respectively with gate resistance of 100. ELECTRICAL CHARACTERISTICS (Ambient Temperature T...7GHz 5.8 5.7GHz 250 5.7GHz 0 25 180 4 3 2 1 5.8 6.0 6.2 6.4 6.2 6.6 6.3 6...
Description C-Band Internally Matched FET

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    PD27025F

PEAK electronics GmbH
Part No. PD27025F
OCR Text ...re Range Sym Value VDSS 65 VGS -0.5, +15 ID 4.25 83.5 -- TJ 0.48 200 Unit Vdc Vdc Adc W W/C C Total Dissipation at TC = 70 C: PD TSTG ...7GHz , N-Channel E-Mode, Lateral MOSFET Electrical Characteristics Recommended operating condition...
Description 25 W, 2.5GHz - 2.7GHz , N-Channel E-Mode, Lateral MOSFET

File Size 1,597.83K  /  4 Page

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    MGFS38E2527-01

Mitsubishi Electric Semiconductor
Part No. MGFS38E2527-01
OCR Text ...ectric corporation rev. 0.5 (1/21) may -2010 description mgfs38e2527 is a gaas rf amplifier de...7ghz hbt mmic module mitsubishi electric corporation rev. 0.5 (2/21) ...
Description 2.5 - 2.7GHz HBT MMIC MODULE

File Size 463.07K  /  21 Page

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    AN11006

NXP Semiconductors
Part No. AN11006
OCR Text ... rev date description 2 .0 1 .0 20112710 20110106 schematic updated initial document. nxp semiconductors an11006 2.3_2.7ghz lna an11006 all information provided in this document is subject to legal disc...
Description Single stage 2.3_2.7GHz LNA with BFU730F

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    MGFC39V7177A04 MGFC39V7177A

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGFC39V7177A04 MGFC39V7177A
OCR Text ...AWING Unit : millimeters 21.0 +/-0.3 FEATURES Class A operation Internally matched to 50(ohm) system High output power P1dB = 8W (TYP.) @ f=7.1~7.7GHz High power gain GLP = 8 dB (TYP.) @ f=7.1~7.7GHz High power added efficiency P.A....
Description 7.1 ~ 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET

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    PD27025F

TriQuint Semiconductor
Part No. PD27025F
OCR Text ...re Range Sym Value VDSS 65 VGS -0.5, +15 ID 4.25 83.5 -- TJ 0.48 200 Unit Vdc Vdc Adc W W/C C Total Dissipation at TC = 70 C: PD TSTG ...7GHz , N-Channel E-Mode, Lateral MOSFET Electrical Characteristics Recommended operating condition...
Description 25 W, 2.5GHz - 2.7GHz , N-Channel E-Mode, Lateral MOSFET

File Size 234.11K  /  3 Page

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    MAX3861 MAX3861D MAX3861E MAX3861EGG

Maxim Integrated Products
Part No. MAX3861 MAX3861D MAX3861E MAX3861EGG
OCR Text 0; 02/02 KIT EVALUATION AVAILABLE 2.7Gbps Post Amp with Automatic Gain Control General Description The MAX3861 is a low-power amplif...7GHz 2.7GHz to 4.0GHz VCC 0.3 Up to 6GHz at max gain, CCZ = 0.1F VIN Differential 0.9 linearity 1....
Description 2.7Gbps Post Amp with Automatic Gain Control

File Size 1,551.00K  /  13 Page

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    TIM1011-10L

Toshiba Semiconductor
Part No. TIM1011-10L
OCR Text ...GHz to 11.7GHz HIGH GAIN G1dB=6.0 dB at 10.7 GHz to 11.7GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Co...
Description MICROWAVE POWER GaAs FET

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    TIM1011-15L

Toshiba Semiconductor
Part No. TIM1011-15L
OCR Text ...NDITIONS UNIT dBm MIN. 41.0 6.0 -42 TYP. MAX. 42.0 7.0 4.5 31 -45 4.5 5.5 0.8 5.5 100 VDS= 9V dB A dB % f = 11.7 to 12.7GHz add IM3 IDS2 Tch Two-tone Test Po=30.0 dBm (Single Carrier Level) (VDS X IDS + Pin...
Description P1dB=42.0dBm at 10.7ghz to 11.7GHz

File Size 496.11K  /  4 Page

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