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For 0.25m Found Datasheets File :: 1975 Search Time::1.078ms
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				Maxim
Part No.	MAX1533EVKIT
OCR Text	0; 3/05 MAX1533 Evaluation Kit General Description The MAX1533 evaluation kit (EV kit) demonstrates the MAX1533's standard application ...25m POSCAP/KO-CAP Kemet T520D157M006ASE025 Sanyo 6TPE150M 220F 20%, 6.3V, 25m POSCAP/KO-CAP Kemet T5...
Description	Evaluation Kit for the MAX1533
File Size	210.44K / 7 Page	View it Online	Download Datasheet

				United Monolithic Semicondu... UMS[United Monolithic Semiconductors] United Monolithic Semiconductors GmbH
Part No.	CHA2093RBF CHA2093RBF_24 CHA2093RBF/24
OCR Text	...with a standard PHEMT process : 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in a new SMD leadless chip carrier. Main Features Broad band performance: 20-30GHz Gain...
Description	20-30GHz Low Noise Amplifier 20 - 30GHz的低噪声放大
File Size	184.01K / 8 Page	View it Online	Download Datasheet

				United Monolithic Semicondu... UMS[United Monolithic Semiconductors] United Monolithic Semiconductors GmbH
Part No.	CHA2093 CHA2093-99F_00 CHA2093-99F/00
OCR Text	... with a standard HEMT process : 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. IN 50 25 Vd 7034 OUT Vg 1 Vg 2 20 Gain ( dB ) 10 Noise Figu...
Description	20-30GHz Low Noise Amplifier Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVS06; Number of Contacts:19; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight 20 - 30GHz的低噪声放大
File Size	106.09K / 8 Page	View it Online	Download Datasheet

				United Monolithic Semiconductors GmbH UMS[United Monolithic Semiconductors]
Part No.	CHA5093 CHA5093-99F_00 CHA5093-99F/00
OCR Text	...actured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Gain & RLoss (dB) 25 Main Features Performances : 22-26GHz 29dBm output p...
Description	Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVS06; No. of Contacts:19; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight 22 - 26GHz高功率放大器 22-26GHz High Power Amplifier
File Size	158.56K / 8 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLC157XP
OCR Text	...ts should not exceed 9.6 and -1.0 mA respectively with gate resistance of 200. 3. The operating channel temperature (Tch) should not exceed ...25m Dia Au wire) n=2 (0.3mm length, 25m Dia Au wire) Download S-Parameters, click here Source ...
Description	GaAs FET & HEMT Chips
File Size	55.15K / 4 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLK057XV
OCR Text	...ents should not exceed 4.4 and -0.2 mA respectively with gate resistance of 1000. 3. The operating channel temperature (Tch) should not exce...25m Dia Au wire) n=2 (0.2mm length, 25m Dia Au wire) Download S-Parameters, click here 3 FL...
Description	GaAs FET & HEMT Chips
File Size	53.79K / 4 Page	View it Online	Download Datasheet

				FUJITSU[Fujitsu Media Devices Limited]
Part No.	FMM5701LG
OCR Text	...VGG Tstg Top Condition Rating 7.0 -3.0 -55 to +125 -40 to +85 Unit V V C C ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) Item ...25m Dia Au wire) RF OUT n=1 (0.3mm length, 25m Dia Au wire) GND n=6 (0.3mm length, 25m Dia Au wire) ...
Description	LNA MMIC
File Size	73.87K / 6 Page	View it Online	Download Datasheet

				Fujitsu Microelectronics FUJITSU[Fujitsu Media Devices Limited] Fujitsu Component Limited.
Part No.	FMM5701X
OCR Text	...VGG Tstg Tch Condition Rating 7.0 -3.0 -65 to +175 +175 Unit V V C C ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) Item Symbol...25m Dia Au wire) RF OUT n=1 (0.3mm length, 25m Dia Au wire) GND n=6 (0.3mm length, 25m Dia Au wire) ...
Description	24GHz Low Noise Amplifier MMIC
File Size	147.87K / 4 Page	View it Online	Download Datasheet

				Siemens Semiconductor Group Infineon
Part No.	HYB39S16160CT-7 HYB39S16160CT-6
OCR Text	...CLK ( 1-N Rule) Single 3.3V +/- 0.3V Power Supply LVTTL Interface Plastic Packages: P-TSOPII-50 400mil width ( x16 ) * * * * * * Fully...25m process and organized as 2 banks x 512kbit x 16. These synchronous devices achieve high speed da...
Description	1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications
File Size	138.03K / 15 Page	View it Online	Download Datasheet

				CET[Chino-Excel Technology]
Part No.	CED6060R CEU6060R
OCR Text	..., TSTG Limit 60 20 30 120 30 50 0.3 -55 to 175 Unit V V A A A W W/ C C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA 6-42 3 50 C/W C/W CED6060R/CEU6060R ELECTRI...
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
File Size	40.15K / 5 Page	View it Online	Download Datasheet

For 0.25m Found Datasheets File :: 1975 Search Time::1.078ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |