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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF5S21090HSR3 MRF5S21090HR3 MRF5S21090HR3_06 MRF5S21090HR306
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| OCR Text |
...idth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 14.5 dB Drain Efficiency -- 26% IM3 @ 10 MHz Offset -- - 37.5 dBc i...080 Microstrip 0.130 x 0.080 Microstrip 0.230 x 0.080 Microstrip 0.347 x 0.208 Microstrip 0.090 x 0.... |
| Description |
RF Power Field Effect Transistors
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| File Size |
396.49K /
12 Page |
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Freescale (Motorola)
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF5S21090LSR3 MRF5S21090L MRF5S21090LR3
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| OCR Text |
...2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Output Power -- 19 Watts Avg. Power Gain -- 14.5 dB Efficiency -- 26% IM3 -- - 37...080 Microstrip 0.130 x 0.080 Microstrip 0.230 x 0.080 Microstrip 0.347 x 0.208 Microstrip 0.090 x 0.... |
| Description |
2170 MHz, 19 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 2170 MHz, 19 W Avg., 2 x CDMA, 28 V Lateral N-Channel RF Power MOSFETs
RF Power Field Effect Transistors
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| File Size |
578.61K /
12 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF5S21100HSR3 MRF5S21100HR3
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| OCR Text |
...idth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 13.5 dB Drain Efficiency -- 26% IM3 @ 10 MHz Offset -- - 37 dBc in ...080 Microstrip 0.421 x 0.080 Microstrip 0.140 x 0.080 Microstrip 1.031 x 0.080 Microstrip 0.380 x 0.... |
| Description |
To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
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| File Size |
388.49K /
12 Page |
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it Online |
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Freescale (Motorola)
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF5S21100LSR3 MRF5S21100LR3 MRF5S21100L
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| OCR Text |
...2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Output Power -- 23 Watts Avg. Power Gain -- 13.5 dB Efficiency -- 26% IM3 -- - 37...080 0.927 0.620 0.079
x 0.080 x 0.080 x 0.080 x 0.080 x 0.643 x 0.643 x 0.048 x 0.048 x 1.136
... |
| Description |
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
MRF5S21100L, MRF5S21100LR3, MRF5S21100LSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
561.39K /
12 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF5S9100NR1 MRF5S9100MBR1 MRF5S9100MR1 MRF5S9100NBR1
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| OCR Text |
...th = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 19.5 dB Drain Efficiency -- 28% ACPR @ 750 kHz Offset -- - 46.8 dBc...080 Microstrip 0.105 x 0.080 Microstrip 0.954 x 0.080 Microstrip 0.115 x 0.220 Microstrip 0.375 x 0.... |
| Description |
N-Channel Enhancement-Mode Lateral MOSFETs
RF Power Field Effect Transistors
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| File Size |
516.79K /
16 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S18140HSR3 MRF6S18140HR3
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| OCR Text |
0, 9/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N- CDMA base station applicat...080 Microstrip 1.015 x 0.080 Microstrip 0.099 x 1.070 Microstrip 0.516 x 1.070 Microstrip 0.292 x 0.... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
405.55K /
12 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S9125NR1_06 MRF6S9125NBR1 MRF6S9125NR1
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| OCR Text |
...th = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 20.2 dB Drain Efficiency -- 31% ACPR @ 750 kHz Offset = - 47.1 dBc ...080 x 0.080 x 0.220 x 0.220 x 0.420 x 0.620 x 0.620 x 0.620 x 0.620
Microstrip Microstrip Microst... |
| Description |
RF Power Field Effect Transistors
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| File Size |
848.94K /
20 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S9125NR1 MRF6S9125 MRF6S9125MBR1 MRF6S9125MR1 MRF6S9125NBR1
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| OCR Text |
...th = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 20.2 dB Drain Efficiency -- 31% ACPR @ 750 kHz Offset = - 47.1 dBc ...080 x 0.080 x 0.220 x 0.220 x 0.420 x 0.620 x 0.620 x 0.620 x 0.620
Microstrip Microstrip Microst... |
| Description |
RF Power Field Effect Transistors
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| File Size |
480.38K /
16 Page |
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it Online |
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Digitron Semiconductors
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| Part No. |
1N2980B 1N4000A 1N2970 1N2974B
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| OCR Text |
...above 50c forward voltage @ 2.0 a: 1.5 volts thermal resistance 10 c/w (typical) junct ion to case (stud) solder temperatures 260c for...080 10 16.7 1n2986b 24 105 5 250 350 .080 10 18.2 1n2987b 25 100 6 250 310 .080 10 ... |
| Description |
10 WATT ZENER DIODES
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| File Size |
123.90K /
3 Page |
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it Online |
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Price and Availability
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