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MHW72 74ABT08N 58N10 RW1065 TC74HCT BC177CSM AS1923 ON1124
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  0.0088 Datasheet PDF File

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    hitachi
Part No. 2SH16
OCR Text ... conditions V IC = 100 A, VGE = 0 VCE = 600 V, VGE = 0 VGE = 20 V, VCE = 0 -------------------------------------------------------------------------------------- ---------------------------------------------------------------------------...
Description Silicon N-Channel IGBT
From old datasheet system

File Size 37.34K  /  8 Page

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    TOSHIBA
Part No. 2SJ345
OCR Text ...* Low threshold voltage: Vth = -0.5~-1.5 V High speed Small package Complementary to 2SK1828 Unit: mm Marking Equivalent Circuit Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Gate-source voltage DC drain current ...
Description Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Applications

File Size 138.68K  /  6 Page

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    Renesas
Part No. 2SJ574
OCR Text ... Conditions I D = -100 A, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, V DS = 0 VDS = -30 V, VGS = 0 I D = -10A, VDS = -5 V ID = -150 mA,VGS = -10 V Note 3 Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resis...
Description Transistors>Switching/MOSFETs

File Size 68.15K  /  11 Page

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    Renesas
Part No. 2SJ575
OCR Text ... Conditions I D = -100 A, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, V DS = 0 VDS = -30 V, VGS = 0 I D = -10A, VDS = -5 V ID = -50 mA,VGS = -10 V Note 3 ID = -50 mA,VGS = -4 V Note 3 ID = -50 mA, V DS = -10 V Note 3 Gate to source cutoff ...
Description Transistors>Switching/MOSFETs

File Size 67.83K  /  11 Page

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    2SK0615 2SK615

PANASONIC[Panasonic Semiconductor]
Part No. 2SK0615 2SK615
OCR Text ...nted circuit board. 6.90.1 (0.4) 2.50.1 (1.0) (1.0) 3.50.1 2.40.2 (1.5) (1.5) R 0.9 R 0.7 I Absolute Maximum Ratings (Ta = 25C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allow...
Description SILICON N-CHANNEL MOS FET

File Size 83.14K  /  4 Page

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    Sanyo
Part No. 2SK1425 0907
OCR Text ...nit:mm 2076B [2SK1425] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 2.0 1.0 0.6 2.0 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain-to-Source Voltage Gate-to...
Description N-Channel Silicon MOSFET
From old datasheet system

File Size 100.75K  /  4 Page

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    2SK2524-01MR

Fuji Electric
Part No. 2SK2524-01MR
OCR Text ...h=25C Min. 450 2,5 Typ. 3,0 Max. 3,5 500 1,0 100 1,0 1700 200 75 30 75 90 55 1,65 3,0 10 0,87 6,6 1150 130 50 20 50 60 35 1,1 550 3,9 9,0 Unit V V A mA nA S pF pF pF ns ns ns ns A A ns C - Thermal Characteristics It...
Description N-channel MOS-FET

File Size 150.28K  /  3 Page

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    2SK2552B

NEC
Part No. 2SK2552B
OCR Text ... PACKAGE DRAWING (Unit: mm) 0.3 +0.1 -0 0.15 +0.1 -0.05 1.6 0.1 * Low noise: -108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 k) * Especially suitable for audio and telephone * Small package: SC-75 (USM) 0.8 0.1 FEATURES 3...
Description N-CHANNEL SILICON J-FET

File Size 125.50K  /  6 Page

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    2SK2552

NEC
Part No. 2SK2552
OCR Text ... PACKAGE DRAWING (Unit: mm) 0.3 +0.1 -0 0.15 +0.1 -0.05 FEATURES * Compact package * High forward transfer admittance 1000 S TYP. (IDSS = 100 A) 1600 S TYP. (IDSS = 200 A) * Includes diode and high resistance at G - S 1.6 0.1 0.8 ...
Description Small signal transistor for ECM impedance conversion

File Size 115.43K  /  6 Page

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    2SK2559

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SK2559
OCR Text ...specially, input capacitance at 0 biass is small. *oe static Rds(on) is small. The *oe switching time is fast. The APPLICATION *oe DC/DC converters OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) *oe Power supplies of DC 12-24V input ...
Description VZ Series Power MOSFET(200V 10A)

File Size 378.38K  /  10 Page

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