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    STI7200

STMicroelectronics
Part No. STI7200
OCR Text ...am, while acquiring an epg/data stre am from a satellite or cable front end. the transport architecure uncouples the transport packet processing from the transport packet collection. the input transport streams are stored in sdram after pi...
Description Triple display / HDTV set-top box / dual decoder

File Size 226.92K  /  8 Page

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    Atmel Corp.
Atmel, Corp.
Part No. AT45DB321C-CC AT45DB321C-RI AT45DB321C-CI AT45DB321C-RC AT45DB321C-CNC AT45DB321C-TC
OCR Text ...l as writ ing a continuous data stre am. eeprom emulation (bit or byte alterability) is easily handled with a self-contained three step read-modify-write operation. unlike conventional flash memories that are accessed randomly with multi- ...
Description 32 MEGABIT 2.7 VOLT DATAFLASH
TRANSI, NPN, 160V, 600MA, 2W, SOT223, CZT5551
DIODE/SM,REC*1A*60V 32M X 1 FLASH 2.7V PROM, PDSO28

File Size 401.41K  /  37 Page

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    http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4N51163QC-ZC25 K4N51163QC-ZC36 K4N51163QC-ZC33 K4N51163QC-ZC2A
OCR Text ...amage to the device. this is a stre ss rating only and functional operation of the device at these or any other conditi ons above those indicated in the operational sections of this s pecification is not implied. exposure to absolute max...
Description ; Filter Type:RFI; Current Rating:180A; Voltage Rating:480V; Series:FN258 RoHS Compliant: Yes 512MB的GDDR2 SDRAM
512Mbit gDDR2 SDRAM

File Size 1,416.01K  /  64 Page

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    Applied Micro Circuits Corp.
Part No. CS3160
OCR Text ...e. absolute maximum ratings are stre ss ratings only and operation of the device at the maximums stated or any other condit ions beyond those indicated in the "recommended operati ng conditions" of this document are not infe rred. exposur...
Description 2.5 Gbps Wide Bandwidth Transimpedance Amplifier

File Size 103.71K  /  11 Page

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    Electronic Theatre Controls, Inc.
Part No. AN231K04-DVLP3 AN231E04-E2-QFNTY AN231E04-E2-QFNSP AN231E04-E2-QFNTR
OCR Text ...ating life time. the additional stre ss caused by higher local electric fields within the cmos circuitry may induce metal migration, oxide leakage and ot her time/quality related issues. 1.2 recommended operating conditions parameter sy...
Description Dynamically Reconfigurable dpASP
动态可重构dpASP

File Size 438.96K  /  24 Page

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    Toshiba Corporation
Part No. TPS859T
OCR Text ...ronment. please do not give the stre ss with heat remained in the product. (2) the resin part is easily scratched, so avoid friction with hard materials. (3) when installing the assembly boar d in equipment, ensure that th is product ...
Description
File Size 283.52K  /  13 Page

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    Electronic Theatre Controls, Inc.
Part No. U63764 U63764DK70 U63764DK70G1 U63764DC70 U63764DC70G1
OCR Text ...damage to the device. this is a stre ss rating only, and functional operation of the device at condition a bove those indicated in the operational sections of this spe cification is not implied. exposure to absolute maximum rating c ond...
Description CapStore 8K x 8 nvSRAM CapStore 8K的8非易

File Size 137.12K  /  14 Page

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    PT100MF0MP1 SHARPELECTRONICSCORP-PT100MF0MP1

Sharp Electrionic Components
Part No. PT100MF0MP1 SHARPELECTRONICSCORP-PT100MF0MP1
OCR Text ...ate bending or other mechanical stre sses leading to debonding of the internal gold wires, or other similar failure modes. 3. if using an infrared lamp to preheat the parts, such heat sources may cause localized high temperatures in the p...
Description Surface Mount Type, Opaque Resin Phototransistor

File Size 806.41K  /  11 Page

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    Austin Semiconductor, Inc
Part No. AS5LC1008DCJ-12/IT AS5LC1008DCJ-12/XT AS5LC1008DJ-12/XT AS5LC1008DJ-10/XT AS5LC1008DCJ-10/XT AS5LC1008DCJ-10/IT AS5LC1008DJ-10/IT AS5LC1008DCJ-20/IT AS5LC1008DCJ-15/IT AS5LC1008DJ-12/IT AS5LC1008DJ-15/IT AS5LC1008DJ-20/IT AS5LC1008DCJ-15/XT AS5LC1008DJ-20/XT AS5LC1008DCJ-20/XT
OCR Text ...amage to the device. this is a stre ss rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification i s not implied. exposure to absolute maximum ...
Description 128K x 8 SRAM High-Speed CMOS SRAM with 3.3V Revolutionary Pinout

File Size 112.40K  /  10 Page

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