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NXP Semiconductors N.V.
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| Part No. |
BUK7506-75B
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| OCR Text |
...rdering information avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy i d =75a; v sup 75 v; r gs =50 ? ; v gs =10v; t j(init) = 25 c; unclamped --852mj dynamic characteristics q gd gate-drain charge v gs =10... |
| Description |
N-channel TrenchMOS standard level FET N沟道TrenchMOS标准电平场效应管
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| File Size |
183.87K /
13 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BUK7506-55B
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| OCR Text |
...e figure 12 -5.16m ? avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy i d =75a; v sup 55 v; r gs =50 ? ; v gs =10v; t j(init) = 25 c; unclamped --680mj dynamic characteristics q gd gate-drain charge v gs =10... |
| Description |
N-channel TrenchMOS standard level FET N沟道TrenchMOS标准电平场效应管
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| File Size |
156.86K /
14 Page |
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it Online |
Download Datasheet |
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Anadigics Inc
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| Part No. |
AWT6102M2
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| OCR Text |
...wr all phase angles - - -70 dbc ruggedness: p in = 12 dbm, v sup =4.5v, v apc = 0.2 - 2.8v 10:1 vswr all phases leakage current v apc =0v, v cc = 4.5v no input power - 10 - a noise power 925 to 935 mhz 935 to 960 mhz -72 -84 dbm/100 kh... |
| Description |
EGSM/DCS/PCS Triple Band Power Amplifier Module
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| File Size |
234.13K /
8 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
PSMN027-100BS
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| OCR Text |
...gate charge - 30 - nc avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy v gs =10v; t j(init) =25c; i d =37a; v sup 100 v; unclamped; r gs =50 ? --59mj
psmn027-100bs all information provided in this document i... |
| Description |
N-channel 100V 26.8 m standard level MOSFET in D2PAK.
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| File Size |
197.75K /
14 Page |
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it Online |
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