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Wuxi NCE Power Semicond...
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Part No. |
NCE55P05S
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OCR Text |
...nsity cell design for ultra low rdson fully characterized avalanche voltage and current excellent package for good heat dissipation ...7 - nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =... |
Description |
NCE P-Channel Enhancement Mode Power MOSFET
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File Size |
360.26K /
7 Page |
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it Online |
Download Datasheet
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Wuxi NCE Power Semicond...
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Part No. |
NCE55H12
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OCR Text |
...nsity cell design for ultra low rdson fully characterized avalanche voltage and current good stability and uniformity with high e as...7 capacitance vs vds vds drain-source voltage (v) figure 8 safe operation area ... |
Description |
NCE N-Channel Enhancement Mode Power MOSFET
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File Size |
365.90K /
7 Page |
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it Online |
Download Datasheet
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MORE Semiconductor Comp...
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Part No. |
MSN1030D
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OCR Text |
...nsity cell design for ultra low rdson fully characterized avalanche voltage and current good stability and uniformity with high e as...7 - ns t r turn-on rise time - 7 - ns t d(off) turn-off delay time - 29 - ns t f... |
Description |
100V(D-S) N-Channel Enhancement Mode Power MOS FET
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File Size |
430.84K /
6 Page |
View
it Online |
Download Datasheet
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Wuxi NCE Power Semicond...
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Part No. |
NCE8651Q
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OCR Text |
...nsity cell design for ultra low rdson fully characterized avalanche voltage and current 2.5v drive common-drain type applicati...7 1 v v gs =4.5v, i d =10a - 7.2 11 v gs =4 v, i d =5a - 7.4 11.5 v gs =3.1v, i d =5a ... |
Description |
N-Channel Enhancement Mode Power MOSFET
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File Size |
339.65K /
7 Page |
View
it Online |
Download Datasheet
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Price and Availability
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