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  igbt Datasheet PDF File

For igbt Found Datasheets File :: 14792    Search Time::1.547ms    
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    GA75TS60U

IRF[International Rectifier]
Part No. GA75TS60U
OCR Text igbt INT-A-PAK Features * Generation 4 igbt technology * UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode * Very low conduction and switching losses * HEXFREDTM antiparallel diodes ...
Description    HALF-BRIDGE igbt INT-A-PAK

File Size 213.44K  /  10 Page

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    HGTG11N120CND

FAIRCHILD[Fairchild Semiconductor]
Part No. HGTG11N120CND
OCR Text igbt with Anti-Parallel Hyperfast Diode The HGTG11N120CND is a Non-Punch Through (NPT) igbt design. This is a new member of the MOS gated high voltage switching igbt family. igbts combine the best features of MOSFETs and bipolar transistor...
Description 43A, 1200V, NPT Series N-Channel igbt with Anti-Parallel Hyperfast Diode

File Size 108.55K  /  8 Page

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    HGTG24N60D1D

INTERSIL[Intersil Corporation]
Part No. HGTG24N60D1D
OCR Text igbt with Anti-Parallel Ultrafast Diode Package JEDEC STYLE TO-247 EMITTER COLLECTOR GATE COLLECTOR (BOTTOM SIDE METAL) Features * 24A, 600V * Latch Free Operation * Typical Fall Time <500ns * Low Conduction Loss * With Anti-Parallel...
Description 3.3V 36-mc CPLD
24A, 600V N-Channel igbt with Anti-Parallel Ultrafast Diode
24A/ 600V N-Channel igbt with Anti-Parallel Ultrafast Diode

File Size 35.26K  /  5 Page

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    HGTG24N60D1

INTERSIL[Intersil Corporation]
Part No. HGTG24N60D1
OCR Text igbt Package JEDEC STYLE TO-247 EMITTER COLLECTOR GATE COLLECTOR (BOTTOM SIDE METAL) Features * 24A, 600V * Latch Free Operation * Typical Fall Time <500ns * High Input Impedance * Low Conduction Loss Description The igbt is a MO...
Description 24A/ 600V N-Channel igbt
24A, 600V N-Channel igbt

File Size 32.04K  /  4 Page

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    SKM400GB12T4-13

Semikron International
Part No. SKM400GB12T4-13
OCR Text ...bt4 = 4. generation fast trench igbt (infineon) cal4 = soft switching 4. generation cal-diode isolated copper baseplate using dbc technology (direct bonded copper) increased power cycling capability with integrated gate resistor fo...
Description Fast igbt4 Modules

File Size 384.64K  /  5 Page

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    HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N120BNST

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N120BNST
OCR Text igbt The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) igbt designs. They are new members of the MOS gated high voltage switching igbt family. igbts combine the best features of MOSFETs and bipolar transistors. ...
Description 1200V, NPT Series N-Channel igbt; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape &amp; Reel 35 A, 1200 V, N-CHANNEL igbt, TO-263AB
35A/ 1200V/ NPT Series N-Channel igbt
35A, 1200V, NPT Series N-Channel igbt
35 A, 1200 V, NPT N-Channel igbt

File Size 175.79K  /  8 Page

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    SKM400GB12E4-13

Semikron International
Part No. SKM400GB12E4-13
OCR Text ... generation medium fast trench igbt (infineon) cal4 = soft switching 4. generation cal-diode isolated copper baseplate using dbc technology (direct bonded copper) increased power cycling capability with integrated gate resistor for...
Description igbt4 Modules

File Size 384.83K  /  5 Page

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    SKM400GB126D-15

Semikron International
Part No. SKM400GB126D-15
OCR Text igbt modules skm400gb126d features trench = trenchgate technology v ce(sat) with positive temperature coefficient high short circuit capability, self limiting to 6 x i c ul recognized, file no. e63532 typical applications* ac inver...
Description Trench igbt Modules

File Size 398.90K  /  5 Page

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    HGTP10N40F1D HGTP10N50F1D

INTERSIL[Intersil Corporation]
Part No. HGTP10N40F1D HGTP10N50F1D
OCR Text ... tRR < 60ns Description The igbt is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a ...
Description 10A 400V and 500V N-Channel igbts with Anti-Parallel Ultrafast Diodes
10A, 400V and 500V N-Channel igbts with Anti-Parallel Ultrafast Diodes
10A/ 400V and 500V N-Channel igbts with Anti-Parallel Ultrafast Diodes

File Size 33.70K  /  5 Page

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    HGTP12N60A4D HGT1S12N60A4DS HGTG12N60A4D HGTG12N60A4DNL HGTP12N60A4DNL

Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP12N60A4D HGT1S12N60A4DS HGTG12N60A4D HGTG12N60A4DNL HGTP12N60A4DNL
OCR Text igbt with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impeda...
Description    600V, SMPS Series N-Channel igbt with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel igbt with Anti-Parallel Hyperfast Diode 54 A, 600 V, N-CHANNEL igbt, TO-247
600V/ SMPS Series N-Channel igbt with Anti-Parallel Hyperfast Diode
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk

File Size 170.23K  /  8 Page

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For igbt Found Datasheets File :: 14792    Search Time::1.547ms    
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