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For ets Found Datasheets File :: 2247 Search Time::1.546ms
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				INFINEON[Infineon Technologies AG]
Part No.	SGD02N120 SGP02N120 SGB02N120 SGI02N120
OCR Text	...y td(on) tr td(off) tf Eon Eoff ets T j =2 5 C , V C C = 80 0 V, I C = 2 A, V G E = 15 V /0 V , R G = 91 , Energy losses include "tail" and diode reverse recovery. 23 16 260 61 0.16 0.06 0.22 30 21 340 80 0.21 0.08 0.29 mJ ns Symbol Conditi...
Description	Fast S-IGBT in NPT-technology
File Size	389.46K / 13 Page	View it Online	Download Datasheet

				Filtran LTD
Part No.	TEW5769
OCR Text	...the requirements of: ITU G.703, ets 300 011, BS6328 and ANSI T1.408. MECHANICAL 3 Top view White dot at pin #1 6 5 Line Dimensions are in mm. Device 8.8 max 1 1 6 5 4 4 8.1 max 2 3 0.6 7.0 max 1.27 2.54 1.27 ...
Description	CEPT/T1 Input/Output Transformer
File Size	21.26K / 1 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SGP30N60HS SGP30N60HS09
OCR Text	...y td(on) tr td(off) tf Eon Eoff ets T j = 25 C, V C C = 4 00V, I C = 30A, V G E = 0/ 1 5V , R G = 1 1 L 1 ) = 60nH, 1) C = 40 pF Energy losses include "tail" and diode reverse recovery. 20 21 250 25 0.60 0.55 1.15 mJ ns Symbol Conditions ...
Description	High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
File Size	382.64K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SKB06N60HS SKB06N60HS07
OCR Text	...s td(on) tr td(off) tf Eon Eoff ets T j =2 5 C , V C C = 40 0 V, I C = 6 A, V G E = 0/ 15 V , R G = 50 2) L = 60 n H, 2) C = 40 pF Energy losses include "tail" and diode reverse recovery. 11 11 196 41 0.10 0.09 0.19 mJ ns Symbol Conditio...
Description	High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
File Size	1,189.09K / 14 Page	View it Online	Download Datasheet

				ZARLINK[Zarlink Semiconductor Inc]
Part No.	MT9075BPR MT9075BP MT9075BPR1 MT9075B MT9075BL MT9075BL1 MT9075BP1
OCR Text	... It also meets or supports etsI ets 300 011, ets 300 166 and ets 300 233 as well as BS 6450. 2 Zarlink Semiconductor Inc. MT9075B Data Sheet VSS OSC2 OSC1 VSS VDD BL/FR TxDL TxDLCK IC IC DS/RD DSTi DSTo CSTi CSTo VDD CS R...
Description	E1 Single Chip Transceiver
File Size	819.74K / 102 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IKW20N60T
OCR Text	...s td(on) tr td(off) tf Eon Eoff ets T j = 25C , V C C = 40 0 V, I C =20A, V G E = 0 /1 5 V, RG=12 , L 2 ) =1 31nH, C 2 ) =31pF Energy losses include "tail" and diode reverse recovery. Symbol Conditions IKP20N60T IKW20N60T Value min. T...
Description	Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology
File Size	448.93K / 14 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4PC30KPBF
OCR Text	... t d(on) tr td(off) tf Eon Eoff ets t sc t d(on) tr t d(off) tf ets Eon Eoff ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off...
Description	INSULATED GATE BIPOLAR TRANSISTOR
File Size	249.95K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies AG Infineon Technologies A...
Part No.	SGW15N120 SGP15N120 SGP15N12009 SGW15N120FKSA1
OCR Text	...y td(on) tr td(off) tf Eon Eoff ets T j = 25 C, V C C = 8 00V, I C = 15A, V G E = 1 5V/ 0 V, R G = 3 3 , L 1 ) = 180nH, 1) C = 4 0 pF Energy losses include "tail" and diode reverse recovery. 18 23 580 22 1.1 0.8 1.9 24 30 750 29 1.5 1.1 2...
Description	Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
File Size	401.04K / 12 Page	View it Online	Download Datasheet

				Zarlink
Part No.	MT88E45
OCR Text	...-716, draft TIA/EIA-777; * etsI ets 300 778-1 (FSK only variant) & -2; * BT (British Telecom) SIN227 & SIN242 Bellcore `CPE Alerting Signal' (CAS), etsI `Dual Tone Alerting Signal' (DT-AS), BT Idle State and Loop State `Tone Alert Signal' d...
Description	4-Wire Calling Number Identification Circuit 2
File Size	473.13K / 30 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	Q67040S4726 IGW75N60T
OCR Text	... td(on) tr td(off) tf Eon Eoff ets Turn-off energy Total switching energy T j = 25 C, V C C = 4 00V, I C = 75A, V G E = 0/ 1 5V , R G = 5, L 2 ) = 100nH, C 2 ) =39pF Energy losses include "tail" and diode reverse recovery. ns ...
Description	1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... Low Loss IGBT in Trench and Fieldstop technology
File Size	365.66K / 12 Page	View it Online	Download Datasheet

For ets Found Datasheets File :: 2247 Search Time::1.546ms
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