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For di dt Found Datasheets File :: 43155 Search Time::2.907ms
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				ON Semiconductor
Part No.	NTMSD6N303R2
OCR Text	... ? ns (i s = 5 a, v gs = 0 v, di s /dt = 100 a/ m s ) t a - 11 - di s /dt = 100 a/ m s) t b ? 15 ? reverse recovery stored charge (i s = 5 a, di s /dt = 100 a/ s, v gs = 0 v) q rr ? 0.015 ? m c 7. pulse test: pulse width 300 m ...
Description	Power MOSFET 6 Amps, 30 Volts(6A,30V 的功率MOSFET)
File Size	143.22K / 12 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NTR0202PL NTR0202PLT1 NTR0202PLT1G NTR0202PLT3 NTR0202PLT3G
OCR Text	...ns (i s = ?1.0 a, v gs = 0 v, di s /dt = 100 a/ s ) t a 9 di s /dt = 100 a/ s) t b 3 reverse recovery stored charge (i s = ?1.0 a, v gs = 0 v, di s /dt = 100 a/ s) q rr 0.007 c 2. pulse test: pulse width 300 s, duty c...
Description	Power MOSFET 400 mA 20 V P-Channel SOT-23
File Size	55.91K / 6 Page	View it Online	Download Datasheet

				Vishay Siliconix http://
Part No.	SIHF30N60E SIHF30N60E-E3
OCR Text	...temperature. e. i sd ? i d , di/dt = 100 a/s, starting t j = 25 c. product summary v ds (v) at t j max. 650 r ds(on) max. at 25 c ( ? )v gs = 10 v 0.125 q g max. (nc) 130 q gs (nc) 15 q gd (nc) 39 configuration single n-channel ...
Description	E Series Power MOSFET
File Size	180.69K / 8 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	SIHFZ14STRL-GE3 IRFZ14S IRFZ14SPBF IRFZ14L IRFZ14LPBF IRFZ14STRLPBF SIHFZ14S-GE3 SIHFZ14S-E3 SIHFZ14STL-E3 SIHFZ14L-GE3 SIHFZ14L-E3
OCR Text	...ee fig. 12). d. i sd ? 10 a, di/dt ? 90 a/s, v dd ? v ds , t j ? 175 c. e. 1.6 mm from case. f. when mounted on 1" square pcb (fr-4 or g-10 material). product summary v ds (v) 60 r ds(on) ( ? )v gs = 10 v 0.20 q g (max.) (...
Description	Power MOSFET
File Size	301.44K / 9 Page	View it Online	Download Datasheet

				Semikron International
Part No.	SKM300GB12E4
OCR Text	...5v r g on =1.5 ? r g off =1.5 ? di/dt on = 6100 a/s di/dt off = 3000 a/s t j = 150 c 220 ns t r t j = 150 c 44 ns e on t j = 150 c 27 mj t d(off) t j = 150 c 520 ns t f t j = 150 c 117 ns e off t j = 150 c 39 mj r th(j-c) per igbt 0.11 k/w ...
Description	IGBT4 Modules
File Size	188.79K / 5 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDPF6N60ZUT
OCR Text	...y time v gs = 0v, i sd = 4.5a di f /dt = 100a/ ? s -36-ns q rr reverse recovery charge - 37 - nc notes: 1: repetitive rating: pulse width limi ted by maximum junction temperature 2: l = 15mh, i as = 4.5a, v dd =...
Description	N-Channel UniFETTM Ultra FRFETTM MOSFET 600V, 4.5A, 2
File Size	336.52K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ448
OCR Text	...A, VGS = 0 IF = -4.0 A, VGS = 0 di/dt = 50 A/s A A pF pF pF ns ns ns ns nC nC nC V ns nC Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time D.U.T. RG = 25 PG VGS = -20 0 V IAS ID VDD BVDSS VDS VGS 0 t 50 L VDD...
Description	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	117.41K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ449 2SJ449JM
OCR Text	...A, VGS = 0 IF = -6.0 A, VGS = 0 di/dt = 50 A/s A nA pF pF pF ns ns ns ns nC nC nC V ns nC Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time D.U.T. RG = 25 PG VGS = -20 0 V IAS ID VDD BVDSS VDS VGS 0 t 50 L VD...
Description	Pch vertical DMOS FET MP-45F SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	116.80K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDPF680N10T
OCR Text	...ry time v gs = 0v, i sd = 12a di f /dt = 100a/ s -29-ns q rr reverse recovery charge - 35 - nc notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. l = 0.7mh, i as = 12a, v dd = 5...
Description	N-Channel PowerTrenchMOSFET 100V, 12A, 68m
File Size	332.06K / 8 Page	View it Online	Download Datasheet

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