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150c Datasheet PDF File

For 150c Found Datasheets File :: 89556 Search Time::2.141ms
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				Infineon Technologies AG Infineon Technologies A...
Part No.	IDB09E12007
OCR Text	...200v, t j =25c v r =1200v, t j =150c i r - - - - 100 700 a forward voltage drop i f =9a, t j =25c i f =9a, t j =150c v f - - 1.65 1.7 2.15 - v 1 device on 40mm40mm1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain...
Description	Fast Switching EmCon Diode
File Size	204.94K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	CPV364M4K
OCR Text	...- V IC = 24A --- IC = 13A, TJ = 150c 6.0 VCE = VGE , IC = 250A --- mV/C VCE = VGE , IC = 250A --- S VCE = 100V, IC = 10A 250 A VGE = 0V, VCE = 600V 3500 VGE = 0V, VCE = 600V, TJ = 150c 1.7 V IC = 15A See Fig. 13 1.6 IC = 15A, TJ = 150c 100 ...
Description	IGBT SIP MODULE
File Size	269.79K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies AG Infineon Technologies A...
Part No.	IDB04E12007
OCR Text	...v, t j =25c v r =1200v, t j =150c i r - - - - 100 350 a forward voltage drop i f =4a, t j =25c i f =4a, t j =150c v f - - 1.65 1.7 2.15 - v 1 device on 40mm40mm1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper...
Description	Fast Switching EmCon Diode
File Size	200.54K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NTR1P02T3 NTR1P02T1 NTR1P02T1G
OCR Text	...) (VDS = -20 V, VGS = 0 V, TJ = 150c) Gate-Body Leakage Current (VGS = 20 V, VDS = 0 V) ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (VDS = VGS, ID = -250 mA) (Negative Temperature Coefficient) Static Drain-to-Source On-State Resistan...
Description	1 Amp, 20 Volts MOSFET Power MOSFET(−20 V, −1 A, P−Channel SOT−23 Package)
File Size	47.14K / 6 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NTR0202PL_06 NTR0202PL NTR0202PLT1 NTR0202PLT1G NTR0202PLT3 NTR0202PLT3G NTR0202PL06
OCR Text	...) (VDS = -20 V, VGS = 0 V, TJ = 150c) Gate-Body Leakage Current (VGS = 20 V, VDS = 0 V) ON CHARACTERISTICS (Note 2) Gate Threshold Voltage (VDS = VGS, ID = -250 mA) (Negative Temperature Coefficient) Static Drain-to-Source On-Resistance (V...
Description	Power MOSFET -20 V, -400 mA, P-Channel SOT-23 Package( -400mA, -20V，P通道，SOT3封装的功率MOSFET)
File Size	133.83K / 5 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SKW30N60
OCR Text	...e operating area VCE 600V, Tj 150c Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25C Operating junction and storage temperature ...
Description	IGBTs & DuoPacks - 30A 600V TO247AC IGBT Diode Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
File Size	391.97K / 13 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NTLJF3117PTAG NTLJF3117P NTLJF3117PT1G
OCR Text	...KAGE (nA) 1.4 VGS = 0 V TJ = 150c 1000 1.2 1.0 100 TJ = 100C 0.8 0.6 -50 -25 0 25 50 75 100 125 150 10 2 4 6 8 10 12 14 16 18 20 TJ, JUNCTION TEMPERATURE (C) -VDS...
Description	Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, uCool Package
File Size	88.51K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NTGD4161P_06 NTGD4161P NTGD4161PT1G NTGD4161P06
OCR Text	... V -3.6 V -3.4 V 3 2 2 150c 25C -40C 0 1 -3.2 V -3 V -2.8 V 0 1 2 3 4 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) 5 1 0 1 2 3 4 -VGS, GATE-TO-SOURCE VOLTAGE (V) 5 Figure 1. On-Region Characteristics RDS(on), DRAIN-TO...
Description	Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6
File Size	63.71K / 5 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AON6884
OCR Text	...tion p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti...
Description	40V Dual N-Channel MOSFET
File Size	245.18K / 6 Page	View it Online	Download Datasheet

				DYNEX SEMICONDUCTOR LTD DYNEX[Dynex Semiconductor]
Part No.	DS1107SG37 DS1107SG39 DS1107SG40 DS1107SG38 DS1107SG36 DS1107SG35 DS1107SG
OCR Text	...= 1000A, dIRR/dt = 3A/s Tcase = 150c, VR = 100V At Tvj = 150c At Tvj = 150c Min. Max. 1.6 50 2000 80 0.75 0.44 Units V mA C A V m CURVES 2500 2500 Measured under pulse conditions dc Half wave 2000 2000 3 phase Mean power d...
Description	Rectifier Diode
File Size	96.08K / 7 Page	View it Online	Download Datasheet

For 150c Found Datasheets File :: 89556 Search Time::2.141ms
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