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    IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR

International Rectifier, Corp.
Part No. IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text ...5C, IS = -38A, VGS = 0V --- 89 130 ns TJ = 25C, IF = -38A --- 230 350 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is ...2%. Uses IRF4905 data and test conditions Starting TJ = 25C, L = 1.3mH RG = 25, IAS = -38A. (...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

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    IRF4905 IRF4B905 IRF4905PBF

International Rectifier, Corp.
Part No. IRF4905 IRF4B905 IRF4905PBF
OCR Text ...C, IS = -38A, V GS = 0V --- 89 130 ns TJ = 25C, IF = -38A --- 230 350 C di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is d...2%. IRF4905 1000 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTT OM - 4. 5V TOP 1000...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ...= 25C, IS = 9.0A, VGS = 0V --- 130 190 ns TJ = 25C, I F = 9.0A --- 650 970 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on...2%. Uses IRF530N data and test conditions Starting TJ = 25C, L = 3.1mH RG = 25W, IAS = 9.0A. ...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

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    IRF9410

International Rectifier
Part No. IRF9410
OCR Text ...--- --- --- --- 2.8 A 37 1.0 80 130 V ns nC --- 0.78 --- 40 --- 63 Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, I S = 2.0A, VGS = 0V TJ = 25C, I F = 2.0A di/dt = 100A/s D S Notes: R...
Description Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)

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    IRF9530NL IRF9530NS IRF9530NSTRR

IRF[International Rectifier]
Part No. IRF9530NL IRF9530NS IRF9530NSTRR
OCR Text ... 25C, IS = -8.4A, VGS = 0V --- 130 190 ns TJ = 25C, IF = -8.4A --- 650 970 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-o...2%. Uses IRF9530N data and test conditions Starting TJ = 25C, L =7.0mH RG = 25, IAS = -8.4A. ...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A)
Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

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    IRF9530N

IRF[International Rectifier]
Part No. IRF9530N
OCR Text ... 25C, IS = -8.4A, VGS = 0V --- 130 190 ns TJ = 25C, I F = -8.4A --- 650 970 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-...2%. IRF9530N 100 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOT TOM - 4.5V TO P 100 ...
Description Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

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    IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL
OCR Text ... ns TJ = 25C, IF = -7.2A --- 84 130 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive ...2%. Uses IRF9Z24N data and test conditions RG = 25, IAS = -7.2A. (See Figure 12) ISD -7.2A, di...
Description -60V Single P-Channel HEXFET Power MOSFET in a TO-262 package
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.175ohm,身份证\u003d- 12A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)

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    IRF9Z24N IRF9Z24NPBF

IRF[International Rectifier]
Part No. IRF9Z24N IRF9Z24NPBF
OCR Text ... ns TJ = 25C, IF = -7.2A --- 84 130 C di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Re...2%. IRF9Z24N 100 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTT OM - 4. 5V TOP 2 0 ...
Description -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

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    IS42S16100C1 IS42S16100C1-5T IS42S16100C1-5TL IS42S16100C1-6T IS42S16100C1-6TL IS42S16100C1-7T IS42S16100C1-7TI IS42S161

ISSI[Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
Part No. IS42S16100C1 IS42S16100C1-5T IS42S16100C1-5TL IS42S16100C1-6T IS42S16100C1-6TL IS42S16100C1-7T IS42S16100C1-7TI IS42S16100C1-7TL IS42S16100C1-7TLI
OCR Text ...40 160 3 4 2 3 40 30 30 170 150 130 150 170 150 130 150 120 100 70 90 120 100 70 90 1 Unit A A V V mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA m mA mA mA mA mA mA mA mA mA (R) DC ELECTRICAL CHARACTERISTICS (Recommended Opera...
Description 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

File Size 750.59K  /  79 Page

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    L6562 FN9012 ISL6562 ISL656062E ISL656062EVAL1 ISL6562CB ISL6562CB-T

http://
INTERSIL[Intersil Corporation]
Part No. L6562 FN9012 ISL6562 ISL656062E ISL656062EVAL1 ISL6562CB ISL6562CB-T
OCR Text ...ion TA = 25oC, VFB = 0V 2.0 430 130 26 500 150 36 570 170 46 MHz kHz A A VIL(VID) VIH(VID) IVID VIDx = 0V or VIDx = 3V 2.2 10 4.5 20 5.0 0.6 40 5.5 V V A V VFB VFB VFB VFB VCROWBAR VCROWBAR ICROWBAR VREF IREF DAC Programmed to 1.050V DAC Pr...
Description Microprocessor CORE Voltage Regulator Two-Phase Buck PWM Controller
PWM Controller, 2-Phase Current Mode, 5-Bit VID, Reg ?.8%, 1.05-1.825 Voltage, VRM 8.5

File Size 40.63K  /  5 Page

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