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  1.2-ghz Datasheet PDF File

For 1.2-ghz Found Datasheets File :: 34912    Search Time::7.313ms    
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    ASIS3028 S3028 ADVANCEDSEMICONDUCTORINC.-ASIS3028

Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
Part No. ASIS3028 S3028 ADVANCEDSEMICONDUCTORINC.-ASIS3028
OCR Text ...S TJ TSTG Tsoldering 10 mA 50 V 1.5 W @ TC = 25 C -65 C to +150 C -65 C to +150 C +230 C for 30 Seconds CHARACTERISTICS SYMBOL VF VBR C...2.25 45 2.2 1.0 UNITS V V pF pF --GHz A D V A N C E D S E M I C O N D U C T O R, I N C 7525 ...
Description SILICON ABRUPT VARACTOR DIODE

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    ATF-10100 ATF-10100-GP3

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-10100 ATF-10100-GP3
OCR Text ... Parameters and Test Conditions[1] Optimum Noise Figure: VCE = 2 V, IDS = 25 mA f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 4.0 GHz f = 4.0 GHz Units dB dB dB dB dB dB dBm dB mmho mA V 80 70 -3.0 12.0 Min. Ty...
Description 0.5-12 GHz Low Noise Gallium Arsenide FET

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    ATF-10136 ATF-10136-STR ATF-10136-TR1 ATF10136

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-10136 ATF-10136-STR ATF-10136-TR1 ATF10136
OCR Text ...eel Packaging Option Available [1] Description The ATF-10136 is a high performance gallium arsenide Schottky-barriergate field effect tr...2 V, IDS = 25 mA f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 4.0 GHz...
Description ER 3C 3#16 PIN RECP BOX
0.5-12 GHz Low Noise Gallium Arsenide FET

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    ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236
OCR Text ...eel Packaging Option Available [1] Description The ATF-10236 is a high performance gallium arsenide Schottky-barriergate field effect tr...2 V, IDS = 25 mA f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 4.0 GHz...
Description ER 2C 2#16S PIN RECP BOX
0.5?12 GHz Low Noise Gallium Arsenide FET
0.5-12 GHz Low Noise Gallium Arsenide FET
0.512 GHz Low Noise Gallium Arsenide FET

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    ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TRI ATF10736

Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
Part No. ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TRI ATF10736
OCR Text ...utput Power: 20.0 dBm typical P 1 dB at 4 GHz * Low Noise Figure: 1.2 dB Typical at 4 GHz * Cost Effective Ceramic Microstrip Package * Tape-and-Reel Packaging Option Available [1] Description The ATF-10736 is a high performance gallium...
Description 0.5-12 GHz General Purpose Gallium Arsenide FET
0.5?12 GHz General Purpose Gallium Arsenide FET
0.512 GHz General Purpose Gallium Arsenide FET

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    ATF-13100 ATF-13100-GP3

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-13100 ATF-13100-GP3
OCR Text 1.1 dB Typical at 12 GHz * High Associated Gain: 9.5 dB Typical at 12 GHz * High Output Power: 17.5 dBm Typical P1 dB at 12 GHz This GaAs...2-18 GHz frequency range. Electrical Specifications, TA = 25C Symbol NFO Parameters and Test Con...
Description 2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 浣??澹扮???? FET)
2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 低噪声砷化镓 FET) 2-18 GHz的低噪声砷化镓场效应管(2-18 GHz的低噪声砷化镓场效应管)

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    ATF-13336 ATF-13336-STR ATF-13336-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-13336 ATF-13336-STR ATF-13336-TR1
OCR Text 1.4 dB Typical at 12 GHz * High Associated Gain: 9.0 dB Typical at 12 GHz * High Output Power: 17.5 dBm Typical P 1 dB at 12 GHz * Cost Effe...2-16 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length with a total gat...
Description 2-16 GHz Low Noise Gallium Arsenide FET

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    ATF-13736 ATF-13736-STR ATF-13736-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-13736 ATF-13736-STR ATF-13736-TR1
OCR Text 1.8 dB Typical at 12 GHz * High Associated Gain: 9.0 dB Typical at 12 GHz * High Output Power: 17.5 dB Typical at 12 GHz * Cost Effective Ce...2-16 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length with a total gat...
Description 2-16 GHz Low Noise Gallium Arsenide FET

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    ATF-13786 ATF-13786-STR ATF-13786-TR1 ATF13786

Electronic Theatre Controls, Inc.
Agilent (Hewlett-Packard)
ETC[ETC]
HP[Agilent(Hewlett-Packard)]
List of Unclassifed Manufacturers
Part No. ATF-13786 ATF-13786-STR ATF-13786-TR1 ATF13786
OCR Text ... MSG 137 GATE DRAIN 1 3 GAIN (dB) 15 MAG 10 S 21 MSG 2 SOURCE 5 0 1 5 FREQUENCY (GHz) 10 20 Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. VDS = 3 V, IDS ...
Description Surface Mount Gallium Arsenide FET for Oscillators

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    ATF-21170

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-21170
OCR Text ...utput Power: 23.0 dBm Typical P 1 dB at 4 GHz * Hermetic Gold-Ceramic Microstrip Package housed in a hermetic, high reliability package. ...2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 4.0 GHz f = 4.0 GHz Units dB...
Description 0.5-6 GHz Low Noise Gallium Arsenide FET

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Price and Availability




 
Price & Availability of 1.2-ghz
TTI

Part # Manufacturer Description Price BuyNow  Qty.
LQG15WH56NG02D
LQG15WH56NG02D
Murata Manufacturing Co Ltd RF Inductors - SMD 56 NH 2% 10000: USD0.093
20000: USD0.091
30000: USD0.089
50000: USD0.087
BuyNow
10000
ASCH0010050539NJCP
ASCH0010050539NJCP
Pulse Electronics Corporation RF Inductors - SMD Chilisin RF inductor Multilayer-STD 10000: USD0.00483
BuyNow
50000
LQW18ANR22J00D
LQW18ANR22J00D
Murata Manufacturing Co Ltd RF Inductors - SMD .22 UH 5% 4000: USD0.054
8000: USD0.05
BuyNow
4000
LQG15HN39NJ02D
LQG15HN39NJ02D
Murata Manufacturing Co Ltd RF Inductors - SMD 39 NH 5% 10000: USD0.0183
20000: USD0.0178
30000: USD0.0175
40000: USD0.0171
50000: USD0.0168
150000: USD0.0164
BuyNow
10000
LQP03TN56NJ02D
LQP03TN56NJ02D
Murata Manufacturing Co Ltd RF Inductors - SMD 56 NH 15000: USD0.0107
30000: USD0.0102
45000: USD0.01
75000: USD0.0098
BuyNow
15000

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