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  05-09-13 Datasheet PDF File

For 05-09-13 Found Datasheets File :: 21651    Search Time::1.547ms    
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    SAMTEC INC
Part No. CQTH-150-05-C-D CQTH-150-07-C-D
OCR Text ...3[10.269] -04: .6001[15.246] -05: .7181[18.240] -06: .8361[21.237] -07: .9542[24.237] -08: 1.1511[29.238] -09: .5224[13.269] = see table 4 "a" .038 ref 1.0 .098 ref 2.49 .015 ref 0.4 .037 ref 0.9 .28...
Description 300 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT

File Size 591.57K  /  3 Page

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    TMP30-05 TMP30-06 TMP30-09 TMP30 TMP30-24 TMP30-30 TMP30-36 TMP30-48 TMP30-12 TMP30-15 TMP30-19

Tumbler Technologies TRUMPower
Part No. TMP30-05 TMP30-06 TMP30-09 TMP30 TMP30-24 TMP30-30 TMP30-36 TMP30-48 TMP30-12 TMP30-15 TMP30-19
OCR Text ...RATING CHART Product No. TMP30-05 TMP30-06 TMP30-09 TMP30-12 TMP30-15 TMP30-19 TMP30-24 TMP30-30 TMP30-36 TMP30-48 NOTE: Vnom. 5-6V 6-8V 9-11V 11-13V 13-17V 17-21V 21-27V 27-33V 33-39V 48V Imin. 0A 0A 0A 0A 0A 0A 0A 0A 0A 0A Output Imax. 5...
Description 30 WATT MEDICAL POWER ADAPTERS

File Size 182.81K  /  2 Page

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    Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. SPP80N06S2L-09 SPB80N06S2L-09
OCR Text ... DIN IEC 68-1 Page 1 2003-05-09 SPP80N06S2L-09 SPB80N06S2L-09 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min....
Description Low Voltage MOSFETs - TO220/263; 80A; 55V; LL; 8.5mOhm
OptiMOS Power-Transistor 的OptiMOS功率晶体

File Size 310.79K  /  8 Page

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    IPD50N06S3-09

Infineon Technologies AG
Part No. IPD50N06S3-09
OCR Text ...A Rev. 1.1 page 1 2009-05-20 IPD50N06S3-09 Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal ...
Description OptiMOS-T Power-Transistor

File Size 157.61K  /  9 Page

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    INFINEON[Infineon Technologies AG]
Part No. SPP80N06S2-09 SPB80N06S2-09
OCR Text ... DIN IEC 68-1 Page 1 2003-05-09 SPP80N06S2-09 SPB80N06S2-09 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. f...
Description Low Voltage MOSFETs - TO220/263; 80 A; 55 V; NL; 9.1 mOhm
OptiMOS Power-Transistor

File Size 315.81K  /  8 Page

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    AT89STK-09

ATMEL Corporation
Part No. AT89STK-09
OCR Text ...tk-09 user guide 1 7521b?scr?10/05 section 1 introduction ................ ................ ................. ................ ................. ......... 1-2 1.1 acronyms .......................................................................
Description AT89STK-09 Starter Kit for AT83C26 User Guide

File Size 211.04K  /  16 Page

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    IPD70P04P4-09

Infineon Technologies AG
Part No. IPD70P04P4-09
OCR Text ...313 4p0409 rev. 1.0 page 1 2010-05-26 ipd70p04p4-09 parameter symbol conditions unit min. typ. max. thermal characteristics 1) thermal resistance, junction - case r thjc - - - 2 k/w smd version, device on pcb r thja minimal footprint - - ...
Description 73 A, 40 V, 0.0089 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 GREEN, PLASTIC PACKAGE-3
OptiMOS-P2 Power-Transistor

File Size 130.26K  /  9 Page

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    Glenair
Part No. 000-01-09-163
OCR Text ... .650 16.51 .730 18.54 .750 19.05 .830 21.08 .900 22.86 .980 24.89 1.050 26.67 1.130 28.70 1.000 25.40 1.080 27.43 NOT AVAILABLE NOT AVAILA...09-132 000-01-15-132 000-01-21-132 000-01-25-132 000-01-31-132 000-01-37-132 000-01-51-132 000-01-10...
Description Connector Accessories Dust Cap

File Size 104.67K  /  1 Page

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    IPD80N06S3-09

Infineon Technologies AG
Part No. IPD80N06S3-09
OCR Text ...v] i d [a] single pulse 0.01 0.05 0.1 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 10 -7 10 1 10 0 10 -1 10 -2 10 -3 t p [s] z thjc [k/w]...09 5 typ. output characteristics 6 typ. drain-source on-state resistance i d = f( v ds ); t j = 2...
Description OptiMOS-T Power-Transistor

File Size 180.92K  /  9 Page

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    IPB80N06S2L-09 IPP80N06S2L-09

Infineon Technologies AG
Part No. IPB80N06S2L-09 IPP80N06S2L-09
OCR Text ...0-1 0.1 Z thJC [K/W] 0.05 I D [A] 0.01 10 10 -2 single pulse 1 0.1 1 10 100 10-3 10-7 10-6 10-5 10-4 10-3 1...09 IPP80N06S2L-09 5 Typ. output characteristics I D = f(V DS); T j = 25 C parameter: V GS 300 10 ...
Description OptiMOS Power-Transistor

File Size 153.51K  /  8 Page

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For 05-09-13 Found Datasheets File :: 21651    Search Time::1.547ms    
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