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  0.5-20ghz Datasheet PDF File

For 0.5-20ghz Found Datasheets File :: 261    Search Time::15.703ms    
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    MASW-004100-1193 MASW-004100-11930G MASW-004100-11930W

M/A-COM Technology Solutions, Inc.
Part No. MASW-004100-1193 MASW-004100-11930G MASW-004100-11930W
OCR Text ...Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 34dB Isolation at 20GHz 50nS Switching Speed Reliable, Fully Monolithic, Glass Encapsul...5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt dio...
Description HMIC Silicon PIN Diode Switch
HMIC垄芒 Silicon PIN Diode Switch

File Size 132.08K  /  7 Page

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    TGC4405

TriQuint Semiconductor
Part No. TGC4405
OCR Text ...3 GHz IF Input Frequency Range: 0.5 - 3 GHz 13 dB Conversion Gain 28 dBm OTOI 30 dBc LO Isolation Bias: Vd = 5 V, Idq = 425 mA, Vg = -0.5 V Typical Technology: 3MI 0.25 um Power PHEMT Chip Dimensions: 2.07 x 1.93 x 0.1mm Measured Perform...
Description 17 - 27 GHz Upconverter

File Size 410.88K  /  11 Page

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    SBFP420B

Sanyo Semicon Device
Part No. SBFP420B
OCR Text ...in : S21e2=17dB typ (f=1.8GHz). 0.35 0.2 Ultrasmall (1006 size), thin (0.5mm) leadless package. 0.05 0.25 [SBFP420B] Side View 3 0.05 4 0.65 0.4 0.25 0.05 2 1 0.05 0.5 Top View 0.6 0.15 0.15 Side V...
Description Ultrahigh-Frequency Transistors
UHF to C Band Low Noise Amplifier, Oscillation Applications
From old datasheet system

File Size 54.12K  /  15 Page

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    MA4SW510

M/A-COM Technology Solutions, Inc.
Part No. MA4SW510
OCR Text ...GHz 10 GHz 1 28 Minimum Nominal 0.9 38 22 23 50 Maximum 1.4 Units dB dB dB dB nS 2 ADVANCED: Data Sheets contain information regarding a...5 -10 Loss (dB) -15 -20 -25 -30 -35 -40 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) J2 J3 J4 J5 J6 ...
Description HMIC?/a> Silicon SP5T PIN Diode Switch RoHS Compliant
HMIC垄芒 Silicon SP5T PIN Diode Switch RoHS Compliant

File Size 481.52K  /  7 Page

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    CHA2292-99F_00 CHA2292 CHA229207 CHA2292-99F/00

United Monolithic Semiconductors
Part No. CHA2292-99F_00 CHA2292 CHA229207 CHA2292-99F/00
OCR Text ...actured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is av...5 dB dB mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precaut...
Description 16-24GHz Low Noise, Variable Gain Amplifier

File Size 218.00K  /  7 Page

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    CHX2191

United Monolithic Semiconductors
Part No. CHX2191
OCR Text ...ufactured with a pHEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. 2Fin & F...5:1 70 mA VSWRout Output VSWR Id Bias current (with RF) A wire bond of typically 0.1 to 0.15nH...
Description 20-42GHz Frequency Multiplier

File Size 222.26K  /  6 Page

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    CHA3664-QAG

United Monolithic Semiconductors
Part No. CHA3664-QAG
OCR Text ...ed with a power p-HEMT process: 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is av...5-21GHz 20.5 dBm saturated output power 16L-QFN3x3 SMD package 15dB gain DC power consumption: 1...
Description 5-21GHz Driver Amplifier

File Size 313.67K  /  8 Page

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    CHA209303 CHA2093-99F/00

United Monolithic Semiconductors
United Monolithic Semic...
Part No. CHA209303 CHA2093-99F/00
OCR Text ... with a standard HEMT process : 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is su...5 4 3 2 1 0 10 15 20 25 30 35 40 Frequency ( GHz ) Main Features | Broad band performance 20-30G...
Description 20-30GHz Low Noise Amplifier

File Size 95.29K  /  8 Page

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    NBB-3121

RF Micro Devices
Part No. NBB-3121
OCR Text ...ower Gain, S21 Min. 12.5 12.0 11.4 9.0 Specification Typ. 12.9 12.9 11.7 9.7 +0.6 1.2:1 1.65:1 2.0:1 Max. Unit dB dB dB dB dB Condition VD =+5V, ICC =50mA, Z0 =50, TA =+25C f=0.1GHz to 1.0GHz f=1.0GHz to 4.0GHz f=4.0GHz t...
Description CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz

File Size 307.97K  /  8 Page

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    CHA3063 CHA306308

United Monolithic Semiconductors
Part No. CHA3063 CHA306308
OCR Text ...factured with a pHemt process : 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is su...5.5-23GHz 21dBm output power (Psat) 19dB gain, 1dB gain flatness Typical PAE:11%@P-1dB Chip size : ...
Description 5.5-23GHz Driver Amplifier

File Size 238.99K  /  8 Page

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