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SavantIC
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| Part No. |
BUT18F
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| OCR Text |
...aining voltage but18af i c =0.1a; i b =0;l=25mh 450 v v cesat collector-emitter saturation voltage i c =4a; i b =0.8a 1.5 v v besat base-emitter saturation voltage i c =4a; i b =0.8a 1.3 v but18f v ce =850v ;v be =0 t j =... |
| Description |
SILICON POWER TRANSISTOR
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| File Size |
134.83K /
3 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE2337
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| OCR Text |
...est Conditions VCB = 900V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 4A IC = 4A, IB = 0.8a IC = 4A, IB = 0.8a VCE = 10V, IC = 0.5A, f = 1MHz IC = 4A, IB1 = 0.8a, IB2 = -1.6A, VCC = 200V Min - - 500 15 8 - ... |
| Description |
Silicon NPN Transistor High Speed Switch
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| File Size |
20.88K /
2 Page |
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it Online |
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Inchange Semiconductor
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| Part No. |
2SD5072
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| OCR Text |
...ration voltage i c = 4a; i b = 0.8a b 5.0 v v be (sat) base-emitter saturation voltage i c = 4a; i b = 0.8a b 1.5 v i cbo collector cutoff current v cb = 800v ; i e = 0 10 a i ebo emitter cutoff current v eb = 4v ; ... |
| Description |
Silicon NPN Power Transistors
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| File Size |
154.85K /
3 Page |
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it Online |
Download Datasheet |
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Advanced Power Electron...
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| Part No. |
AP65WN1K0I
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| OCR Text |
...t jmax. . .
ap65wn1k0i 0.37 fig 1. typical output characteristics fig 2. typical output characteristic...4a v g =10v 0 4 8 12 16 20 0 10203040 v ds , drain-to-source voltage (v) i d , drain current (a) t... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
62.19K /
5 Page |
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it Online |
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Littelfuse, Inc.
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| Part No. |
451
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| OCR Text |
...53 012. 0453 015. Ampere Rating 0.062 0.080 0.100 0.125 0.160 0.200 0.250 0.315 0.375 0.400 0.500 0.630 0.750 0.800 1.0 1.25 1.5 1.6 2.0 2.5...4A 3/8A 1/2A 3/4A 1A 1 1/2A 2A 2 1/2A 3A 3 1/2A 4A 5A 7A 10A 12A 15A 1 10 100 CURRENT IN AMPERES 1/1... |
| Description |
NANO2 FUSE Very Fast-Acting 451/453 Series
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| File Size |
85.11K /
1 Page |
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it Online |
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Icemos Technology
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| Part No. |
ICE8N70FP
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| OCR Text |
... min r ds(on) v gs =10v 0.38 typ q g v ds =480v 41nc typ icemos and its sister company 3 d semi own the ...4a, t j =25 o c - 0.38 0.45 ? v gs =10v, i d =4a, t j =150 o c - 0.95 - gate ... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
705.36K /
9 Page |
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it Online |
Download Datasheet |
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Price and Availability
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