0.0088 pdf Datasheet P14 Full Text Search --- IC-ON-LINE

0.0088 Datasheet PDF File

For 0.0088 Found Datasheets File :: 3012 Search Time::1.453ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |

				SANYO
Part No.	2SD1799
OCR Text	...mm 2045B [2SD1799] 1.5 6.5 5.0 4 2.3 0.5 Features * High DC current gain (hFE4000). * Wide ASO. * Large current capacity. * Small and slim package making it easy to make 2SD1799-applied sets smaller. 0.85 0.7 5.5 7.0 0.8 ...
Description	NPN Epitaxial Planar Silicon Transistors Driver Applications
File Size	83.03K / 5 Page	View it Online	Download Datasheet

				Panasonic
Part No.	2SD1824
OCR Text	0.425) 0.3+0.1 -0.0 Unit: mm 0.15+0.10 -0.05 Features * High forward current transfer ratio hFE * Low collector-emitter saturation voltage VCE(sat) * High emitter-base voltage (Collector open) VEBO * S-Mini type package, allowing ...
Description	Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
File Size	77.46K / 4 Page	View it Online	Download Datasheet

				Jiangsu Changjiang Electronics Technology Co., Ltd
Part No.	2SD2150 2SD2150-SOT-89
OCR Text	... FEATURES Power dissipation : 0.5 W Tamb=25 PCM Collector current ICM :3 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range TJ Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS Parameter Collector-bas...
Description	TRANSISTOR NPN)
File Size	18.29K / 1 Page	View it Online	Download Datasheet

				ROHM
Part No.	2SD2153
OCR Text	...n voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA 2) Excellent DC current gain characteristics. !External dimensions (Units : mm) 4.0 1.0 2.5 0.5 1.5 0.4 (1) 3.0 0.5 (3) 4.5 1.6 (2) (1) Base (2) Collec...
Description	Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
File Size	54.56K / 2 Page	View it Online	Download Datasheet

				Panasonic
Part No.	2SD2275
OCR Text	...ry to 2SB1502 3.30.2 5.00.3 3.0 Unit: mm 20.00.5 s Features q q q 6.0 1.5 1.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak co...
Description	Power Device - Power Transistors - For Audio
File Size	59.21K / 5 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	2SD2627
OCR Text	... unit : mm 2079C [2SD2627] 10.0 3.5 7.2 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 4.5 2.8 3.2 16.1 16.0 0.9 1.2 14.0 ...
Description	Color TV Horizontal Deflection Output Applications
File Size	28.04K / 4 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	2SD2635
OCR Text	...064A [2SD2635] 2.5 1.45 6.9 1.0 Features * Darlington connection * High DC current gain. * DC current gain is less affected by temperature. 4.5 1.0 0.6 1.0 0.9 1 2 3 0.5 0.45 2.54 2.54 Specifications Absolute Maxi...
Description	120V / 2A Driver Applications
File Size	33.96K / 3 Page	View it Online	Download Datasheet

				Hitachi Semiconductor TOSHIBA[Toshiba Semiconductor] Rohm
Part No.	2SD2655 2SD655
OCR Text	... saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) * High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm)) * Complementary pair with 2SB1691 Outline MPAK 3 1 2 1. Emitter 2. Base 3...
Description	Silicon NPN Transistor Silicon NPN Epitaxial Planer Low Frequency Power Amplifier TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
File Size	70.69K / 6 Page	View it Online	Download Datasheet

				SANYO
Part No.	2SD2689LS
OCR Text	...nit : mm 2079D [2SD2689LS] 10.0 3.2 3.5 7.2 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. 4.5 2.8 16.1 16.0 3.6 0.9 1.2 14.0 1.2 0.75 1...
Description	Horizontal Deflection Switching Transistors
File Size	37.22K / 5 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp.
Part No.	2SD560 2SD560LB 2SD560MB
OCR Text	...0% Conditions Ratings 150 100 7.0 5.0 8.0 0.5 30 1.5 150 -55 to +150 Unit V V V A A A W W C C INTERNAL EQUIVALENT CIRCUIT 1. Base 2. Collector 3. Emitter The information in this document is subject to change without notice. Before ...
Description	Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管\|晶体管\|达林顿\|叩\| 100V的五（巴西）总裁\| 5A条一（c）\| TO - 220AB现有 TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 100V V(BR)CEO \| 5A I(C) \| TO-220AB NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING Silicon power transistor
File Size	88.00K / 6 Page	View it Online	Download Datasheet

For 0.0088 Found Datasheets File :: 3012 Search Time::1.453ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |